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| ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 5V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 28 m PD = 1.25W Complementary part number ZXTP25020CFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * * * * High power dissipation SOT23 package High peak current High gain Low saturation voltage 70V forward blocking voltage 5V reverse blocking voltage E E C B Pinout - top view Applications * * * * * MOSFET gate drivers Power switches Motor control DC fans DC-DC converters Ordering information Device ZXTN25020CFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 1B3 Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25020CFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 70 70 20 5 7 4.5 1 10 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 - 55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25020CFH Characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25020CFH Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Symbol BVCBO Min. 70 70 20 7 6 5 Typ. 100 100 35 8.3 8.0 6.6 <1 <1 35 53 85 175 125 Base-emitter saturation voltage Static forward current transfer ratio VBE(sat) 905 815 200 180 90 25 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 350 320 145 40 185 16.8 70.5 88 266 65 300 s; duty cycle 2%. Max. Unit Conditions V IC = 100 A IC = 100 A, RBE 1k -1V < VBE < 0.25V V V V V IC = 10mA (*) IE = 100 A IE = 100 A, RBC 1k 0.25V > VBC > -0.25V IE = 100 A, VCB = 56V VCB = 56V, Tamb= 100C VCE = 56V; RBE 1k -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA(*) IC = 1A, IB = 20mA(*) IC = 2A, IB = 40mA(*) IC = 4.5A, IB = 90mA(*) IC = 4.5A, IB = 450mA(*) IC = 4.5A, IB = 90mA(*) IC = 4.5A, VCE = 2V(*) IC = 10mA, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 4.5A, VCE = 2V(*) IC = 10A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz or or or Collector-emitter breakdown BVCEX voltage (forward blocking) Collector-emitter breakdown BVCEO voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) BVEBO BVECX BVECO Collector-base cut-off current ICBO Collector-emitter cut-off current Emitter-base cut-off current Collector-emitter saturation voltage ICEX IEBO VCE(sat) 50 20 100 50 45 65 100 220 140 1000 900 500 nA A nA nA mV mV mV mV mV mV mV Base-emitter turn-on voltage VBE(on) hFE 25 pF ns ns ns ns VCB = 10V, f = 1MHz(*) VCC = 10V. IC = 1A, IB1 = IB2= 10mA. NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25020CFH Typical characteristics Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25020CFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - June 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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