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ZXMP3A17DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
* Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package
SO8
APPLICATIONS
* Motor Drive * LCD backlighting
ORDERING INFORMATION
DEVICE ZXMP3A17DN8TA ZXMP3A17DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMP 3A17D
Top view
PROVISIONAL ISSUE A - AUGUST 2002 1
ZXMP3A17DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(d) @V GS =10V; T A =70 C (b)(d) @V GS =10V; T A =25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25C (a)(d) Linear Derating Factor Power Dissipation at TA=25C (a)(e) Linear Derating Factor Power Dissipation at TA=25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 20 -4.4 -3.6 -3.4 -16.2 -2.5 -16.2 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C C
I DM IS I SM PD PD PD T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a)(d) Junction to Ambient (b)(e) Junction to Ambient (b)(d)
Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec.
SYMBOL R JA R JA R JA
VALUE 100 70 60
UNIT C/W C/W C/W
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power.
PROVISIONAL ISSUE A - AUGUST 2002 2
ZXMP3A17DN8
CHARACTERISTICS
Max Power Dissipation (W)
-ID Drain Current (A)
RDS(on) 10 Limited
1
DC 1s 100ms 10ms 1ms 100s
100m 10m
Single Pulse Tamb=25C One active die
100m
-VDS Drain-Source Voltage (V)
1
10
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
Two active die
One active die
20
40
60
80 100 120 140 160
Temperature (C)
Safe Operating Area
110 Tamb=25C 100 90 One active die 80 70 60 D=0.5 50 40 Single Pulse 30 D=0.2 20 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k
Derating Curve
Single Pulse Tamb=25C One active die
Thermal Resistance (C/W)
MaximumPower (W)
100
10
1 100 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE A - AUGUST 2002 3
ZXMP3A17DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS I DSS I GSS V GS(th) -1.0 0.070 0.110 6.4 S -30 -1.0 100 V A nA V I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS
D
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3)
NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
V GS =-10V, I D =-3.2A V GS =-4.5V, I D =-2.5A V DS =-15V,I D =-3.2A
g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr
630 113 78
pF pF pF V DS =-15 V, V GS =0V, f=1MHz
1.74 2.87 29.2 8.72 8.28 15.8 1.84 2.80
ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V, I D =-3.2A V DS =-15V,V GS =-5V, I D =-3.2A V DD =-15V, I D =-1A R G =6.0, V GS =-10V
-0.85 19.5 16.3
-1.2
V ns nC
T J =25C, I S =-2.5A, V GS =0V T J =25C, I F =-1.7A, di/dt= 100A/s
PROVISIONAL ISSUE A - AUGUST 2002 4
ZXMP3A17DN8
TYPICAL CHARACTERISTICS
T = 25C
10V
5V
T = 150C
10V
-ID Drain Current (A)
1
2.5V -VGS 2V
-ID Drain Current (A)
10
4V
5V
3.5V 3V
10
4V
3.5V 3V 2.5V 2V
1
-VGS 1.5V
0.1
0.1
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
0.01
0.1
-VDS Drain-Source Voltage (V)
1
10
Output Characteristics
1.4
Normalised RDS(on) and VGS(th)
Output Characteristics
VGS = -10V ID = -3.2A RDS(on)
10
-ID Drain Current (A)
1.2 1.0
T = 150C
1
T = 25C
VGS(th)
0.8
VGS = VDS ID = -250uA
0.1 1 2
-VDS = 10V
3
4
0.6 -50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
2V -VGS T = 25C 2.5V 3V 3.5V
Normalised Curves v Temperature
10
-ISD Reverse Drain Current (A)
10
T = 150C
1
T = 25C
1
4V 5V 10V
0.1
0.1 0.1 1 10
0.01 0.2
On-Resistance v Drain Current
-ID Drain Current (A)
-VSD Source-Drain Voltage (V)
0.4
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - AUGUST 2002 5
ZXMP3A17DN8
TYPICAL CHARACTERISTICS
1000
10
C Capacitance (pF)
800 600 400 200 0 0.1 1
CISS COSS
-VGS Gate-Source Voltage (V)
VGS = 0V f = 1MHz
ID = -3.2A
8 6 4 2
VDS = -15V
CRSS
10
0 0
5
10
15
20
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Current Regulator
QG
50k 12V 0.2F 0.3F
Same as D.U.T
-10V
QGS QGD
IG
VDS D.U.T
VG
VGS
ID
Charge
Basic Gate Charge Waveform
Gate Charge Test Circuit
VGS 10%
VGS RG
RD VDS Vcc
90% VDS
td(on)
tr
Pulse Width < 1S Duty Factor 0.1%
td(off)
tf
Switching Time Waveforms
Switching Time Test Circuit
PROVISIONAL ISSUE A - AUGUST 2002 6
ZXMP3A17DN8
PACKAGE OUTLINE PACKAGE DIMENSIONS
INCHES DIM MIN A A1 D H E L e b c 0.053 0.004 0.189 0.228 0.150 0.016 MAX 0.069 0.010 0.197 0.244 0.157 0.050 MIN 1.35 0.10 4.80 5.80 3.80 0.40 MAX 1.75 0.25 5.00 6.20 4.00 1.27 MILLIMETRES
0.050 BSC 0.013 0.008 0 0.020 0.010 8 0.020
1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50
CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES
h
0.010
(c) Zetex plc 2002
Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uk.sales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to
www.zetex.com
PROVISIONAL ISSUE A - AUGUST 2002 7

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