 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3453 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.72 (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 700 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 700 700 30 10 30 80 420 10 8 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-16F1B Weight: 5.8 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 7.5 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK3453 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 700 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 3/4 30 3/4 700 2.0 3/4 4.0 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 0.72 7.0 1700 40 200 40 Max 10 3/4 100 3/4 4.0 1.0 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 10 V VGS 0V 4.7 9 ID = 5 A VOUT 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 Turn-ON time Switching time Fall time ton RL = 40 W VDD ~ 200 V - 72 tf Duty < 1%, tw = 10 ms = 42 3/4 3/4 3/4 3/4 3/4 nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD ~ 400 V, VGS = 10 V, ID = 10 A - 145 53 25 28 3/4 3/4 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1400 17.5 Max 10 30 -1.9 3/4 3/4 Unit A A V ns mC Marking TOSHIBA K3453 Type Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-02 2SK3453 ID - VDS 10 Common source Tc = 25C 8 Pulse test 10 8 6 5.2 16 20 10 ID - VDS Common source 8 6 Tc = 25C Pulse test 5.6 12 (A) 6 5 4.8 ID Drain current Drain current ID (A) 4 4.6 8 5.2 2 VGS = 4 V 0 0 4 4.6 VGS = 4 V 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 20 V 16 Pulse test 25 12 20 VDS - VGS Common source (V) Tc = 25C 16 Pulse test (A) ID VDS Drain-source voltage 12 ID = 10 A 8 Drain current 8 100 4 Tc = -55C 0 0 4 5 2.5 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 50 RDS (ON) - ID 50 Common source 30 Tc = 25C Pulse test iYfsi (S) 30 Common source VDS = 20 V Pulse test 10 5 3 100 1 0.5 0.3 25 Tc = -55C Drain-source ON resistance RDS (ON) (W) 10 5 3 VGS = 10, 15 V Forward transfer admittance 1 0.5 0.3 0.1 0.1 0.3 0.5 1 3 5 10 30 50 100 0.1 0.1 0.3 0.5 1 3 5 10 30 50 Drain current ID (A) Drain current ID (A) 3 2002-09-02 2SK3453 RDS (ON) - Tc (W) 10 Common source 8 VGS = 10 V Pulse test 100 50 Common source 30 Tc = 25C Pulse test 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0 IDR - VDS Drain-source ON resistance RDS (ON) 6 4 ID = 10 A 5 Drain reverse current IDR (A) 10 3 1 2 2.5 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 120 160 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) Ciss 4 (pF) 1000 500 300 Coss 100 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10 Crss Capacitance C 3 2 1 10 0.1 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Cace temperature Tc (C) PD - Tc 200 500 Dynamic input/output characteristics 20 160 400 VDS 300 VDS = 100 V 16 Drain-source voltage 120 12 200 400 Common source ID = 10 A Tc = 25C Pulse test 8 80 200 40 100 VGS 4 10 0 40 80 120 160 200 0 0 10 20 30 40 50 60 70 0 80 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-02 Gate-source voltage VGS (V) (W) PD Drain power dissipation VDS (V) 2SK3453 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM Single pulse t T Duty = t/T Rth (ch-c) = 1.56C/W 0.001 10 m 100 m 1m 10 m 100 m 1 10 Pulse width tw (S) Safe operating area 100 500 EAS - Tch 30 (mJ) Avalanche energy EAS ID max (pulsed) * ID max (continuous) 1 ms * 100 ms * 400 10 300 (A) 3 Drain current ID DC operation Tc = 25C 200 1 100 0.3 0 25 0.1 * 0.03 Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 100 1000 50 75 100 125 150 Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 7.5 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-09-02 2SK3453 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-02 |
Price & Availability of 2SK3453
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |