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| Composite Transistors XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.425 1.250.1 0.425 0.20.05 For analog switching (Tr1)/switching (Tr2) 0.65 2.10.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 1 2 3 6 5 4 0.90.1 q 2SK1103+UN1213 (transistors with built-in resistor) 0.70.1 0 to 0.1 0.20.1 s Absolute Maximum Ratings Parameter Gate to drain voltage Tr1 Drain current Gate current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VGDS ID IG VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 20 10 50 50 100 150 150 -55 to +150 Unit V mA mA V V mA mW C C 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 9Z Internal Connection 1 2 3 Tr1 6 5 4 Tr2 0.12 -0.02 s Basic Part Number of Element 0.2 +0.05 1 Composite Transistors XP8081 (Ta=25C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = -10A, VDS = 0 VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz 1.8 2.5 400 7 1.5 1.5 min -50 0.2 2.2 -10 -1.0 typ max Unit V mA nA V mS pF pF pF s Electrical Characteristics q Tr1 Parameter Gate to drain voltage Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 3.5V, RL = 1k VCB = 10V, IE = -1mA, f = 200MHz -30% 0.8 150 47 1.0 +30% 1.2 4.9 0.2 80 0.25 V V V MHz k min 50 50 0.1 0.5 0.1 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio 2 Composite Transistors Common characteristics chart PT -- Ta 250 2.5 Ta=25C XP8081 ID -- VDS 2.5 ID -- VGS Total power dissipation PT (mW) 200 2.0 2.0 VGS=0V Drain current ID (mA) Drain current ID (mA) Ta=-25C 1.5 25C 150 1.5 -0.1V -0.2V 1.0 -0.3V -0.4V 0.5 100 1.0 75C 50 0.5 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 0 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | -- VGS 5 | Yfs | -- ID Common source short-circuit input capacitance, Common source reverse transfer capacitance, Ciss, Crss, Coss (pF) Common source short-circuit output capacitance Ciss, Crss, Coss -- VDS VDS=10V Ta=25C Forward transfer admittance |Yfs| (mS) Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25C 2.5 10 VGS=0 f=1MHz Ta=25C 8 4 2.0 IDSS=10mA 1.5 3 IDSS=10mA 2 6 Ciss 1.0 4 1 0.5 2 Coss Crss 0 -1.6 0 -1.2 -0.8 -0.4 0 0 2 4 6 8 0 1 10 100 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) Characteristics charts of Tr2 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25C hFE -- IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C Forward current transfer ratio hFE 140 IB=1.0mA 350 300 250 200 150 100 50 0 Ta=75C 25C -25C 60 40 20 0 0 2 4 6 8 10 12 0.2mA 0.1mA 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 3 Composite Transistors Cob -- VCB 6 XP8081 IO -- VIN VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 10000 3000 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 |
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