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| Composite Transistors XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For high-frequency amplification/For general amplification 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 s Features +0.2 5 2 0.95 4 3 1.1-0.1 q 2SC2404+2SB709A 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Emitter to base voltage Collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 30 20 3 15 -60 -50 -7 -100 -200 200 150 -55 to +150 Unit V V V mA V V V mA mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: ER Internal Connection 6 5 4 Tr1 1 2 3 Tr2 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN4683 (Ta=25C) Symbol VCBO VEBO hFE1 VBE Cre fT NF PG Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCE = 6V, IC = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 200MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz 450 min 30 3 40 720 0.8 650 3.3 24 1 260 mV pF MHz dB dB typ max Unit V V s Electrical Characteristics q Tr1 Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Feedback capacitance Transition frequency Noise figure Power gain q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IB = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 - 0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 - 0.5 V MHz pF typ max Unit V V V A A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2 Composite Transistors Common characteristics chart PT -- Ta 400 XN4683 Total power dissipation PT (mW) 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 12 Ta=25C 10 IB=100A 10 12 VCE=6V Ta=25C 25 IC -- I B 30 IC -- VBE VCE=6V 25C Ta=75C 20 -25C Collector current IC (mA) Collector current IC (mA) 8 80A 8 60A 6 40A 4 20A 2 6 Collector current IC (mA) 0 40 80 120 160 15 4 10 2 5 0 0 4 8 12 16 0 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 fT -- I E 1200 360 VCE=6V Collector to emitter saturation voltage VCE(sat) (V) Transition frequency fT (MHz) 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C -25C Forward current transfer ratio hFE VCB=6V Ta=25C 1000 300 240 Ta=75C 25C 120 -25C 800 180 600 400 60 200 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) 3 Composite Transistors Zrb -- IE Reverse transfer impedance Zrb () VCB=6V f=2MHz Ta=25C XN4683 Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cob -- VCB Collector output capacitance Cob (pF) IC=1mA f=10.7MHz Ta=25C 1.2 f=1MHz IE=0 Ta=25C 120 100 2.0 1.0 80 1.6 0.8 60 1.2 0.6 40 0.8 0.4 20 0.4 0.2 0 -0.1 -0.3 -1 -3 -10 0 0.1 0 0.3 1 3 10 30 100 0 5 10 15 20 25 30 Emitter current IE (mA) Collector to emitter voltage VCE (V) Collector to base voltage VCB (V) PG -- IE 40 35 f=100MHz Rg=50 Ta=25C NF -- IE 12 f=100MHz Rg=50 Ta=25C 10 VCE=10V 6V Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 0 -0.1 -0.3 8 6 VCE=6V, 10V 4 2 -1 -3 -10 -30 -100 0 -0.1 -0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) Emitter current IE (mA) Characteristics charts of Tr2 IC -- VCE -60 Ta=25C -50 IB=-300A -50 -60 VCE=-5V Ta=25C IC -- I B -400 -350 IB -- VBE VCE=-5V Ta=25C Collector current IC (mA) Collector current IC (mA) -250A -40 -200A -30 -40 Base current IB (A) 0 -100 -200 -300 -400 -300 -250 -200 -150 -100 -50 -150A -30 -20 -100A -20 -10 -50A -10 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 0 0 -0.4 -0.8 -1.2 -1.6 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) 4 Composite Transistors IC -- VBE -240 -10 XN4683 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) hFE -- IC IC/IB=10 600 VCE=-10V VCE=-5V -200 25C Ta=75C -160 -25C -3 -1 -0.3 -0.1 -0.03 -0.01 Ta=75C 25C -25C Forward current transfer ratio hFE 500 Collector current IC (mA) 400 Ta=75C 300 25C -25C 200 -120 -80 -40 100 -0.003 -0.001 -1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 160 8 Cob -- VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25C Transition frequency fT (MHz) 140 120 100 80 60 40 20 0 0.1 VCB=-10V Ta=25C 7 6 5 4 3 2 1 0 -1 0.3 1 3 10 30 100 -2 -3 -5 -10 -20 -30 -50 -100 Emitter current IE (mA) Collector to base voltage VCB (V) 5 |
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