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| Composite Transistors XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 2.9 -0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 q 2SD1915(F) x 2 elements 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 50 20 25 300 500 300 150 -55 to +150 Unit V V V mA mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: EN Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON Resistance *1 (Ta=25C) Symbol VCEO ICBO IEBO hFE VCE(sat) VBE fT Cob Ron*1 1k Conditions IC = 1mA, IB = 0 VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 2V, IC = 4mA VCB = 6V, IE = -4mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 20 typ 0 to 0.05 0.1 to 0.3 0.8 max 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 Unit V A A 0.1 0.1 500 2500 0.1 0.6 80 7 1.0 V V MHz pF Ron test circuit IB=1mA f=1kHz V=0.3V VB VV VA Ron= VB !1000() VA-VB 1 Composite Transistors PT -- Ta 500 XN4506 IC -- VCE 24 Ta=25C 120 VCE=2V 100 25C IC -- VBE Total power dissipation PT (mW) Collector current IC (mA) IB=10A 16 8A 12 Collector current IC (mA) 400 20 80 Ta=75C 300 -25C 60 6A 4A 200 8 40 100 4 2A 20 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC IC/IB=10 2000 VCE=2V fT -- I E 200 VCB=6V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE Transition frequency fT (MHz) 1600 25C 1200 -25C 800 1 Ta=75C 160 120 0.1 Ta=75C 25C 0.01 -25C 80 400 40 0.001 0.1 1 10 100 0 0.1 1 10 100 0 -0.1 -1 -10 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 20 Collector output capacitance Cob (pF) f=1MHz Ta=25C 16 12 8 4 0 1 10 100 Collector to base voltage VCB (V) 2 |
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