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Composite Transistors
XN04505 (XN4505)
Silicon NPN epitaxial planar type
For general amplification (Tr1) For amplification of low-frequency output (Tr2)
4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
1.50+0.25 -0.05 2.8+0.2 -0.3
Unit: mm
0.16+0.10 -0.06
0.30+0.10 -0.05 0.50+0.10 -0.05
Basic Part Number
* 2SD0601A (2SD601A) + 2SD1328
10
1.1+0.2 -0.1 1.1+0.3 -0.1
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg
Rating 60 50 7 100 200 25 20 12 0.5 1 300 150 -55 to +150
Unit V V V mA mA V V V A A mW C C
1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74
0 to 0.1
Absolute Maximum Ratings Ta = 25C
(0.65)
* Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half
3
2
1
4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package
Marking Symbol: DZ Internal Connection
4 5 6
Tr2
Tr1
3
2
1
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004 SJJ00079BED
0.40.2
Features
5
1
XN04505
Electrical Characteristics Ta = 25C 3C
* Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 160 0.3 150 3.5 Min 60 50 7 0.1 100 460 0.5 Typ Max Unit V V V A A V MHz pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
* Tr2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistance *2
*1
Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron
Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 20 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 25 20 12
Typ
Max
Unit V V V A V V MHz pF
0.1 200 60 0.13 0.40 1.2 200 10 1.0 800
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 1 k *2: Ron test circuit
IB = 1 mA VB VV VB x 1 000 () V A - VB f = 1 kHz V = 0.3 V
VA
Ron =
2
SJJ00079BED
XN04505
Common characteristics chart PT Ta
500
Total power dissipation PT (mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of Tr1 IC VCE
60 Ta = 25C IB = 160 A 140 A 40 120 A 100 A 30 80 A 20 60 A 40 A 10 20 A
200 1 200 VCE = 10 V Ta = 25C 1 000
200
IB VBE
240
IC VBE
VCE = 10 V
50
Collector current IC (mA)
800
Collector current IC (mA)
Base current IB (A)
160 25C Ta = 75C -25C
600
120
400
80
40
0
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
IC I B
Collector-emitter saturation voltage VCE(sat) (V)
240 VCE = 10 V Ta = 25C 200
VCE(sat) IC
102 IC / IB = 10
600
hFE IC
VCE = 10 V
10
Forward current transfer ratio hFE
500
Collector current IC (mA)
160
400
Ta = 75C 25C
120
1
300 -25C 200
80
10-1
25C Ta = 75C -25C
40
100
0
0
200
400
600
800
1 000
10-2 10-1
1
10
102
0 10-1
1
10
102
Base current IB (A)
Collector current IC (mA)
Collector current IC (mA)
SJJ00079BED
3
XN04505
fT I E
300 VCB = 10 V Ta = 25C
Transition frequency fT (MHz)
240
180
120
60
0 -10-1
-1
-10
-102
Emitter current IE (mA)
Characteristics charts of Tr2 IC VCE
IB = 4.0 mA 1.0 Ta = 25C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102
VBE(sat) IC
102 IC / IB = 10
1.2
Collector current IC (A)
10
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 25
10
25C 1
1
Ta = -25C 75C
Ta = 75C 10-1 25C -25C
10-1
0.2
0
0
1
2
3
4
5
6
10-2 10-2
10-1
1
10
10-2 10-2
10-1
1
10
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
hFE IC
1 200 VCE = 2 V
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
400 VCB = 10 V Ta = 25C 24
Cob VCB
f = 1 MHz IE = 0 Ta = 25C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 000
20
300
800 Ta = 75C 600 25C -25C
16
200
12
400
8
100
200
4
0 10-2
10-1
1
10
0 -1
-10
-102
0
1
10
102
Collector current IC (A)
Emitter current IE (mA)
Collector-base voltage VCB (V)
4
SJJ00079BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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