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| WS256K64-XG4WX 256Kx64 SRAM MODULE FEATURES s Access Times 20, 25, 35ns s MIL-STD-883 Compliant Devices Available s Packaging: * 116 lead, 40mm, Hermetic CQFP (Package 504) s Organized as 256Kx64, User Configurable as 512Kx32 or 1Mx16. s Data I/O Compatible with 3.3V devices s 2V Data Retention devices available s Commercial, Industrial and Military Temperature Range s 5 Volt Power Supply s Low Power CMOS s TTL Compatible Inputs and Outputs s Weight WS256K64-XG4WX - 20 grams typical * This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice. ADVANCED* FIG. 1 PIN CONFIGURATION FOR WS256K64-XG4WX BLOCK DIAGRAM TOP VIEW I/O2 I/O1 I/O0 VCC NC NC NC A0 A1 A2 A3 A4 WE1 CS1 NC NC NC A5 A6 A7 A8 A9 NC CS4 WE4 VCC I/O63 I/O62 I/O61 OE A0-17 WE1 CS 1 WE2 CS2 WE3 CS3 WE4 CS4 4 SRAM MODULES 256K x 16 256K x 16 256K x 16 256K x 16 September 1998 I/O29 I/O30 I/O31 VCC WE2 CS2 NC NC NC A17 A16 A15 NC NC OE CS3 WE3 A14 A13 A12 A11 A10 NC NC NC VCC I/O32 I/O33 I/O34 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 GND I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 116 115 114 113 112 111 110 109 108 107 106 105 104 103 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 I/O60 I/O59 I/O58 I/O57 I/O56 GND I/O55 I/O54 I/O53 I/O52 I/O51 I/O50 I/O49 I/O48 GND I/O47 I/O46 I/O45 I/O44 I/O43 I/O42 I/O41 I/O40 GND I/O39 I/O38 I/O37 I/O36 I/O35 16 16 16 16 I/O0-15 I/O16-31 I/O32-47 I/O48-63 PIN DESCRIPTION I/O0-63 Data Inputs/Outputs A0-17 WE1-4 CS1-4 OE VCC GND Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground 1 White Microelectronics * Phoenix, AZ * (602) 437-1520 WS256K64-XG4WX ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC -0.5 Min -55 -65 -0.5 Max +125 +150 Vcc + 0.5 150 7.0 Unit C C V C V CS H L L L OE X L X H X H L H TRUTH TABLE WE Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active CAPACITANCE (TA = +25C) Parameter Output Enable Capacitance Write Enable Capacitance Chip Select Capacitance Data I/OCapacitance Address Input Capacitance Symbol COE CWE CCS CI/O CAD Condition VIN = 0V, f = 1.0MHz VIN = 0V, f = 1.0MHz VIN = 0V, f = 1.0MHz VIN = 0V, f = 1.0MHz VIN = OV, f = 1.OMHZ Max 50 20 20 20 50 Unit pF pF pF pF pF RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.3 -55 Max 5.5 VCC + 0.3 +0.8 +125 Unit V V V C 4 SRAM MODULES Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage Sym ILI ILO ICC ISB VOL VOH Conditions This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Units Min VCC = 5.5, VIN = GND to VCC CS = VIH, OE = VIH, VOUT = GND to VCC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 IOL = 8mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 2.4 Max 10 10 920 68 0.4 A A mA mA V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V White Microelectronics * Phoenix, AZ * (602) 437-1520 2 WS256K64-XG4WX AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z tRC tAA tOH tACS tOE tCLZ 1 tOLZ 1 tCHZ 1 tOHZ 1 5 0 12 12 0 20 12 5 0 15 15 Symbol Min 20 20 0 25 15 5 0 15 15 -20 Max Min 25 25 0 35 20 -25 Max Min 35 35 -35 Max ns ns ns ns ns ns ns ns ns Units 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time tWC tCW tAW tDW tWP tAS tAH tOW 1 tWHZ 1 tDH 0 Symbol Min 20 17 17 12 17 0 2 0 10 0 -20 Max Min 25 20 20 15 20 0 2 0 10 0 -25 Max Min 35 25 25 20 25 0 2 0 15 -35 Max ns ns ns ns ns ns ns ns ns ns Units 4 SRAM MODULES 1. This parameter is guaranteed by design but not tested. FIG. 2 AC TEST CIRCUIT Current Source I OL AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level D.U.T. VZ Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V 1.5V Output Timing Reference Level C eff = 50 pf (Bipolar Supply) I OH Current Source NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. 3 White Microelectronics * Phoenix, AZ * (602) 437-1520 WS256K64-XG4WX FIG. 3 TIMING WAVEFORM - READ CYCLE ADDRESS tRC tAA CS tRC ADDRESS tACS tCLZ OE tCHZ tAA tOH DATA I/O PREVIOUS DATA VALID DATA VALID tOE tOLZ DATA I/O HIGH IMPEDANCE tOHZ DATA VALID READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) 4 SRAM MODULES FIG. 4 WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tCW CS tAH tAS WE tWP tOW tWHZ tDW tDH DATA I/O DATA VALID WRITE CYCLE 1, WE CONTROLLED FIG. 5 WRITE CYCLE - CS CONTROLLED ADDRESS tWC WS32K32-XHX tAS tAW tCW tAH CS tWP WE tDW DATA I/O DATA VALID tDH WRITE CYCLE 2, CS CONTROLLED White Microelectronics * Phoenix, AZ * (602) 437-1520 4 WS256K64-XG4WX PACKAGE 504: 116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W) 39.6 (1.56) 0.38 (0.015) SQ 5.1 (0.200) MAX 1.27 (0.050) 0.1 (0.005) PIN 1 IDENTIFIER Pin 1 12.7 (0.500) 0.5 (0.020) 4 PLACES 5.1 (0.200) 0.25 (0.010) 4 PLACES 4 SRAM MODULES 0.25 (0.010) 0.05 (0.002) 1.27 (0.050) REF 38 (1.50) REF 4 PLACES 0.38 (0.015) 0.08 (0.003) 68 PLACES ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W S 256K64 - XXX G4W X DEVICE GRADE: M = Military Screened I = Industrial C = Commercial PACKAGE: G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504) ACCESS TIME (ns) ORGANIZATION, 256K x 64 User configurable as 1M x 16 or 512K x 32 SRAM WHITE MICROELECTRONICS -55C to +125C -40C to +85C 0C to +70C 5 White Microelectronics * Phoenix, AZ * (602) 437-1520 |
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