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WBDL301 Surface Monut Schottky Barrier Diode Silicon Hot-Carrier Diodes P b Lead(Pb)-Free Silicon HOT-CARRIER DETECTOR AND SWITCHING DIODES 30 VOLTS Features: * Extremely Low Minority Carrier Lifetime - 15 ps(Typ). * Very Low Capacitance. -- 1.5pF(MaX)@VR = 15V * Low Reverse Leakage. -- IR = 13nAdc(Typ) * Schottky Barrier Diodes Encapsulated in SOD-323 Package. 1 2 Applications: * For High Efficiency UHF and VHF Detector. * For Fast Switiching RF and Digital Applications. * For High-Volume Consumer and industrial / Commercial Requirement. SOD-323 SOD-323 Outline Demensions Unit:mm MILLMETERS Min Max Dim 1.60 1.80 A B 1.15 1.35 C 0.80 1.00 0.25 0.40 D E 0.15 REF H 0.00 0.10 J 0.089 0.377 K 2.30 2.70 PIN 1.CATHODE 2.ANODE WEITRON http://www.weitron.com.tw 1/3 25-Oct-05 WBDL301 MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Characteristics Reverse Voltage Total Device Dissipation FR-5 Board(1), TA=25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Note: FR-5 Minimum Pad Symbol VR PD RJA TJ, Tstg Value 30 200 1.57 635 -55 to +150 Unit V mW mW/C C/W C ELECTRICAL CHARACTERISTICS Characteristics Reverse Breakdown Voltage IR = 10A Maximum instantneous Forward Voltage IF=1.0mA IF=10mA Reverse Leakage VR = 25V Diode Capacitance VR = 15V, f = 1.0MHz Symbol V(BR)R Min 30 Typ - Max - Unit V VF - 0.38 0.52 13 0.9 0.45 0.60 200 1.5 V IR CT - nA pF Device Marking Item WBDL301 Marking 4T Eqivalent Circuit Diagram 1 2 WEITRON http://www.weitron.com.tw 2/3 25-Oct-05 WBDL301 Electrical Characteristics Curves (Ta=25C unless specified otherwise) Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime Figure 3. Reverse Leakage Figure 4. Forward Voltage Figure 5. Krakauer Method of Measuring Lifetime WEITRON http://www.weitron.com.tw 3/3 25-Oct-05 |
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