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 VUC 36
Three Phase Rectifier Bridge
with Fast Diodes and "Softstart" Thyristor
IdAVM = 39 A ITAVM = 31 A VRRM = 1200-1600 V
34 5 6 7 8
VRSM VDSM V 1300 1500 1700
VRRM VDRM V 1200 1400 1600
Type
4 2 1 6 7
1
2
VUC 36-12go2 VUC 36-14go2 VUC 36-16go2
3 5 8
Symbol IdAV IdAVM ITAVM IFSM, ITSM
Test Conditions TK = 85C; module module TK = 85C; (DC) TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings Diode Thyristor 34 39 300 330 270 300 450 460 365 380 31 400 440 360 400 800 810 650 670 150 A A A A A A A A2s A2s As A2s A/ms
2
Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Fast recovery diodes to reduce EMI Separate thyristor for softstart Solderable terminals UL registered E 72873
q q q q q q q
I2t
TVJ = 45C VR = 0 TVJ = TVJM VR = 0
Applications Input rectifier for switching power supplies (SMPS) Softstart capacitor charging Electric drives and auxiliaries
q q q
q q q
(di/dt)cr
TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = ITAVM diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 ms tp = 10 ms
500 200 10 10 1 0.5
A/ms V/ms
q
Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Up to 10 dB lower EMI/RFI compared to standard rectifier
(dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight
Dimensions in mm (1 mm = 0.0394") V W W W C C C V~ V~ Nm lb.in. g
-40...+125 125 -40...+125 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 28
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-2
VUC 36
Symbol IR, ID VF, VT VT0 rT VGT IGT VGD IGD IL IH tgd tq trr RthJC RthJH dS dA a Test Conditions VR = VRRM; VD = VDRM TVJ = TVJM TVJ = 25C Characteristic Values Diode Thyristor 5 0.3 1.85 1.2 16 5 0.3 1.4 mA mA V
IF = 55 A; IT = 45 A, TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ = 25C TVJ = 25C VD = 2/3 VDRM VD = 2/3 VDRM
0.85 V 10 mW 1.5 80 0.2 5 300 100 2.5 V mA V mA mA mA ms ms ms K/W K/W K/W K/W
TVJ = 25C; tG = 30 ms IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 125C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM TVJ = 25C; IF = 10 A; -di/dt = 10 A/ms, VR = 1/2 VRRM per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration 1.5 1.4 0.233 2.0 0.333
typ. 130 0.9 1.1 -
7 mm 7 mm 50 m/s2
(c) 2000 IXYS All rights reserved
2-2


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