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| VTB Process Photodiodes VTB8341 PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very high shunt resistance and have good blue response. CASE 11 CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) VTB8341 SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 60 2.4 x 10 -14 (Typ.) 9.7 x 10 12 (Typ.) 1.4 -8.0 1.0 .10 1100 35 Typ. 60 .12 490 -2.0 100 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 40 |
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