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 Ordering number : ENN8197
VEC2605
P-Channel and N-Channel Silicon MOSFET
VEC2605
Features
* *
General-Purpose Switching Device Applications
* *
Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 2.5V drive. Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions P-channel N-channel 20 10 3 12 0.9 Unit V V A A W C C
-20
10 --1 --4 0.8 150 --55 to +150
Electrical Characteristics at Ta=25C
Parameter [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--500mA ID=--500mA, VGS=--4V ID=--300mA, VGS=--2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz --20 --1 10 --0.4 0.72 1.2 380 540 115 23 15 500 760 --1.4 V A A V S m m pF pF pF Symbol Conditions Ratings min typ max Unit
Marking : BV
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505PF TS IM TB-00001142 No.8197-1/6
VEC2605
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=2A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 0.5 3.2 5.4 44 51 570 110 80 13.5 55 80 70 7.6 1.2 2.1 0.85 1.2 58 73 20 1 10 1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-1A VDS=--10V, VGS=-4V, ID=-1A VDS=--10V, VGS=-4V, ID=-1A IS=--1A, VGS=0 Ratings min typ 8 11 17 13 1.5 0.4 0.3 --0.89 --1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions unit : mm 2227A
0.25
Electrical Connection
8
0.15
7
6
5
0.3 8 7 65
0.25
1
2 2.9
3 0.65
4
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
1 2 3 4
2.8
2.3
Top view
0.75
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8
0.07
No.8197-2/6
VEC2605
Switching Time Test Circuit
[P-channel]
VIN 0V --4V VIN ID= --0.5A RL=20 VOUT VDD= --10V
4V 0V VIN ID=1.5A RL=6.67 VOUT
[N-channel]
VIN VDD=10V
D
PW=10s D.C.1%
D
PW=10s D.C.1%
G
G
VEC2605 P.G 50
P.G
50
VEC2605
S
S
--1.0
ID -- VDS
--3 .0V --2 .5 V
--6.0 V --5.0 V
[Pch]
. --2 0V
3.0
ID -- VDS
V
[Nch]
1.5 V
V 2.5V 4.0 V 3.0
--0.9 --0.8
V
--4. 0
Drain Current, ID -- A
--8.0 V
--0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0
Drain Current, ID -- A
--10 V
1.5
1.0
0.5
10V
--1.5V
8.0V
2.0
6.0
V
2.5
5.0
2.0
V
VGS= --1.0V
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0.1 0.2
VGS=1.0V
0.3 0.4 IT08593
Drain-to-Source Voltage, VDS -- V
--1.0
IT08592
Drain-to-Source Voltage, VDS -- V
3.0
ID -- VGS
[Pch]
Ta= --25 C 25 75C C
ID -- VGS
[Nch]
VDS= --10V
--0.8
VDS=10V
2.5
Drain Current, ID -- A
Drain Current, ID -- A
2.0
--0.6
1.5
--0.4
C --25 C
Ta=7 5C
1.0
1.0
25 C
Ta= 75
0.5
0 0 --0.5 --1.0 --1.5 --2.0 IT08594
0 0 0.5 1.5 2.0 IT08595
Gate-to-Source Voltage, VGS -- V
800
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
70
[Pch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
RDS(on) -- VGS
25
--0.2
C
--25 C
[Nch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700
60
600
500
50
400
ID =2A
40
300
ID= -0.3
ID= -0.5
A
ID =1A
30
A
200 100 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
20 0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V
IT08707
Gate-to-Source Voltage, VGS -- V
IT08597
No.8197-3/6
VEC2605
800
RDS(on) -- Ta
[Pch]
80
RDS(on) -- Ta
[Nch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700
Static Drain-to-Source On-State Resistance, RDS(on) -- m
70
600
500
I D=
3 --0.
A
-S= , VG
2
.5V
60
400
-I D=
, VG 0.5A
-S=
4.0V
50
1A I D=
2. S= , VG
5V
40
300
I D=
=4.0 , VGS 2A
V
200 100 --60
30
--40
--20
0
20
40
60
80
100
120
20 --60
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- C
5
IT08598
yfs -- ID
Ambient Temperature, Ta -- C
10
IT08599
[Pch] Forward Transfer Admittance, yfs -- S VDS= --10V VDS=10V
7
yfs -- ID
[Nch]
Forward Transfer Admittance, yfs -- S
3
2
5
Ta
1.0 7 5
C 25 = -C 75
= Ta
3
--2
C 5
C
75
25
C
2
25
C
3 --0.1
2
3
5
7
--1.0
2
3
1.0 0.1
2
3
5
7
1.0
2
3
5 IT08601
Drain Current, ID -- A
--10 7 5 3 2
IT08600
IF -- VSD
Drain Current, ID -- A
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.2
[Pch]
IF -- VSD
VGS=0
[Nch] VGS=0
Forward Current, IF -- A
--0.01 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT08602
--0.001 --0.2
75 25 C --25 C C
0.4 0.6
--0.1 7 5 3 2
Ta= 75
C 25 C --25 C
--1.0 7 5 3 2
Forward Current, IF -- A
Ta=
0.8
1.0
1.2
1.4 IT08708
Diode Forward Voltage, VSD -- V
5
SW Time -- ID
Diode Forward Voltage, VSD -- V
5 3
[Pch] VDD=10V VGS=4V
SW Time -- ID
[Nch]
Switching Time, SW Time -- ns
Switching Time, SW Time -- ns
3 2
VDD= --10V VGS= --4V
td (off)
tf
2
100 7 5 3 2
10 7 5
td(off) tf
td(on)
tr
tr
td(on)
3 10 2 --0.1 2 3 5 7 --1.0 IT08604 7 0.1 2 3 5 7 1.0 2 3 5 7
Drain Current, ID -- A
Drain Current, ID -- A
IT08709
No.8197-4/6
VEC2605
3 2 1000
Ciss, Coss, Crss -- VDS
[Pch]
2
Ciss, Coss, Crss -- VDS
[Nch] f=1MHz
f=1MHz
Ciss
Ciss, Coss, Crss -- pF
100 7 5
Ciss, Coss, Crss -- pF
7 5 3 2
Ciss
3 2
Coss
Coss
100 7
Crss
Crss
10 7 0 --5 --10 --15 IT08606
5 3 0 5 10 15 20 IT08607
Drain-to-Source Voltage, VDS -- V
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
[Pch] VDS=10V ID=3A
VGS -- Qg
[Nch]
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --1A
1.4
1.6
0
1
2
3
4
5
6
7
8 IT08609
Total Gate Charge, Qg -- nC
7 5 3 2
IT08608
Total Gate Charge, Qg -- nC
3 2 10 7 5
ASO
IDP= --4A
1m
[Pch] <10s
s
10
ASO
IDP=12A ID=3A
[Nch] <10s
1m
10
Drain Current, ID -- A
--1.0 7 5 3 2 --0.1 7 5 3 2
s
Drain Current, ID -- A
ID= --1A
m
s
3 2 1.0 7 5 3 2 0.1 7 5 3 2
DC
10
op er
m
s
10 0m s
0m
on
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
D C
s
op er
ati
at io n
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
--0.01 --0.01
Drain-to-Source Voltage, VDS
1.0
5 7 --10 2 3 -- V IT08610
0.01 0.01
Drain-to-Source Voltage, VDS -- V
1.2
IT08611
PD -- Ta
[Pch]
Allowable Power Dissipation, PD -- W
PD -- Ta
[Nch]
Allowable Power Dissipation, PD -- W
0.8
1.0 0.9 0.8
M
ou
M
nt
ed
ou
0.6
on
nte
ac
do
er
na
am
ce
ic
bo
0.6
ram
ic
0.4
ar
d(
bo
90
ard
0m
(9
0.2
m2 !0
0.4
00
mm
2
.8m
!0 .8
m
)1
0.2
mm
un
)1
it
160
un
it
160
0 0 20 40 60 80 100 120 140
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT08612
Ambient Temperature, Ta -- C
IT08613
No.8197-5/6
VEC2605
Note on usage : Since the VEC2605 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice.
PS No.8197-6/6


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