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DATA SHEET
NEC's NPN SiGe RF IC UPA901TU IN A 8-PIN LEAD-LESS MINIMOLD
FEATURES DESCRIPTION
NEC's UPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. NEC's UPA901TU is packaged in surface mount 8-pin leadless minimold plastic package. This device is fabricated with our SiGe HBT process UHS2HV technology.
* * * * *
OUTPUT POWER: Pout = 19 dBm @ Pin = -3 dBm, VCE = 3.6 V, f = 5.8 GHz LOW POWER: IC = 90 mA @ Pin = -3 dBm, VCE = 3.6 V, f = 5.8 GHz SINGLE POWER SUPPLY OPERATION: VCE = 3.6 V BUILT-IN BIAS CIRCUIT 8-PIN LEAD-LESS MINIMOLD: (2.0 x 2.2 x 0.5 mm)
APPLICATIONS
* 5.8 GHz Cordless Phones * 5.8 GHz Band DSRC (Dedicated Short Range Communication) System * 5 GHz Band Video Transmitter
ORDERING INFORMATION
PART NUMBER UPA901TU UPA901TU-T3 ORDER NUMBER UPA901TU-A UPA901TU-T3-A QUANTITY 50 pcs (Non reel) 5 kpcs/reel PACKAGE 8-pin lead-less minimold( Pb-Free) MARKING A901 SUPPLYING FORM * 8 mm wide embossed taping * Pin 1, Pin 8 face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
California Eastern Laboratories
UPA901TU PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(B1) 4 (E) 3 (N.C.) 2 (C2) 1
Q2 Bias Circuit
Q1 5 (C1) 6 (E) 7 (B2)
8 (Bias)
ABSOLUTE MAXIMUM RATINGS (TA =+25C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current of Q1 Collector Current of Q2 Bias Current Total Power Dissipation Junction Temperature Storage Temperature Operating Ambient Temperature SYMBOL VCBO VCEO VEBO IC1 IC2 IBIAS Ptot
Note
RATINGS 15 4.5 2 75 250 25 410 150 -65 to +150 -40 to +85
UNIT V V V mA mA mA mW C C C
Tj Tstg TA
Note Mounted on 20 x 20 x 0.8 mm (t) glass epoxy PCB (FR-4)
THERMAL RESISTANCE (TA =+25C)
PARAMETER Channel to Ambient Resistance SYMBOL Rth (j-a1)
Note
TEST CONDITIONS Free Air
RATINGS 150 TBD
UNIT C/W C/W
Rth (j-a2)
Note Mounted on 20 x 20 x 0.8 mm (t) glass epoxy PCB (FR-4)
RECOMMENDED OPERATING RANGE (All Parameters)
PARAMETER Collector to Emitter Voltage Total Current Input Power SYMBOL VCE Itotal Pin MIN. - - - TYP. 3.6 90 -3 MAX. 4.5 300 +5 UNIT V mA dBm
UPA901TU
ELECTRICAL CHARACTERISTICS (TA = +25C)
-DC CHARACTERISTICS(1) Q1
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Current Ratio (IC (set) 1/IBIAS) SYMBOL ICBO IEBO hFE
Note
TEST CONDITIONS VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 6 mA VCE = 3.6 V, VBE = VBIAS = 0.865 V
MIN. - - 80 2
TYP. - - 120 4.5
MAX. 60 120 160 9
UNIT nA nA - -
CR1
(2) Q2
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Current Ratio (IC (set) 2/IBIAS) SYMBOL ICBO IEBO hFE
Note
TEST CONDITIONS VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 20 mA VCE = 3.6 V, VBE = VBIAS = 0.865 V
MIN. - - 80 8
TYP. - - 120 10
MAX. 200 400 160 13
UNIT nA nA - -
CR2
(3) Bias Circuit
PARAMETER Bias Circuit Current SYMBOL IBIAS TEST CONDITIONS VBIAS = 0.865 V MIN. - TYP. 4 MAX. - UNIT mA
Note Pulse measurement: PW 350 s, Duty Cycle 2%
IBIAS, IC (set) 1, IC (set) 2 MEASUREMENT CIRCUIT
IC (set) 2 (B1) 4 (E) 3 (N.C.) 2 (C2) 1 VBE (B1) 4 (E) 3 (N.C.) 2 (C2) 1 (B1) 4 (E) 3 (N.C.) 2 (C2) 1 VCE
Q2 Bias Circuit 6 (E) 7 (B2) 8 (Bias) IBIAS VBIAS 5 (C1)
Q2 Bias Circuit 6 (E) IC (set) 1 VCE 7 (B2) 8 (Bias) 5 (C1)
Q2 Bias Circuit 6 (E) VBE 7 (B2) 8 (Bias)
Q1 5 (C1)
Q1
Q1
IBIAS
IC (set) 1
IC (set) 2
IC (set) 1 = CR1x IBIAS = 4.5 x IBIAS (TYP.)
IC (set) 2 = CR2 x IBIAS = 4.5 x IBIAS (TYP.)
The application circuits and their parameters are for reference only and are not intended for actual design-ins.
UPA901TU ELECTRICAL CHARACTERISTICS (TA = +25C)
-RF CHARACTERISTICS(1) Q1
PARAMETER Insertion Power Gain (Q1) Maximum Available Power Gain (Q1) Output Power (Q1) Collector Current (Q1) SYMBOL | S21e |2 MAG1 Pout1 ICC1 TEST CONDITIONS VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz VCE = 3.6 V, IC (set) = 12 mA, f = 5.8 GHz, Pin = -3 dBm VCE = 3.6 V, IC (set) = 12 mA, f = 5.8 GHz, Pin = -3 dBm MIN. 8.5 13.5 10.2 - TYP. 10.0 15.0 11.2 20 MAX. 11.5 - - - UNIT dB dB dBm mA
(2) Q2
PARAMETER Insertion Power Gain (Q2) Maximum Available Power Gain (Q2) Output Power (Q2) Collector Current (Q2) SYMBOL | S21e |
2
TEST CONDITIONS VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz VCE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm VCE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm
MIN. 2 8.5 17.5 -
TYP. 3.5 10.0 19.0 70
MAX. 5 10.5 - -
UNIT dB dB dBm mA
MAG2 Pout2 ICC2
(3) Q1 + Q2, 2 stage Amplifiers
PARAMETER Output Power (Q1 + Q2) SYMBOL Pout TEST CONDITIONS VCE = 3.6 V, RBIAS = 680 , f = 5.8 GHz, Pin = -3 dBm Note VCE = 3.6 V, RBIAS = 680 , f = 5.8 GHz, Pin = -3 dBm Note MIN. 17.5 TYP. 19.0 MAX. - UNIT dBm
Total Current (Q1 + Q2)
Itotal
-
90
-
mA
Note by MEASUREMENT CIRCUIT 1
UPA901TU MEASUREMENT CIRCUIT 1
RFin C1 C2 C4 1.0 pF RFout
0.75 pF 0.5 pF
0.5 pF L1
C3
100 nH
(B1) 4
(E) 3
(N.C.) 2
(C2) 1
5.6 nH
L2 R4 10 C6 1.0 pF C10 10 nF
1.0 pF
C9 Q1 5 (C1) 6 (E) C5 0.75 pF 5.6 nH R5 10 C5 10 nF C8 1.0 pF C7 1.0 pF L3 12 nH
Q2 Bias Circuit 7 (B2) 8 (Bias)
R3
10
L4 IBIAS
R2 10 R1 680 IC1, IC (set) 1 IC2, IC (set) 2
Itotal VCE
IC (set) 1 = CR1 x IBIAS = 4.5 x IBIAS (TYP.) IC (set) 2 = CR2 x IBIAS = 4.5 x IBIAS (TYP.)
The application circuits and their parameters are for reference only and are not intended for actual design-ins.
UPA901TU ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C9
R4 R3 C6 L1 L3
A901
C10 C4
L2 C3 C5 L4
C1 C2 C8 R5
RFin
RFout R2 R1
C11
C7
R : 1005 Chip resistor L : 1005 Chip inductor The dotted line are connected with the back of substrate VCC GND C : 1005 Chip cunductor
Remarks
1. Substrate : 20 x 20 x 0.8 (t) mm FR-4 (4 Layer, each thickness 0.2 mm), copper thickness 18 m, gold flash plating 2. Back side : GND pattern 3. o : Through hole
USING THE NEC EVALUATION BOARD
SYMBOL R1 R2 R3 R4 R5 L1 L2 L3 L4 C1 VALUES 680 10 10 10 10 100 nH 5.6 nH 5.6 nH 12 nH 0.75 pF SYMBOL C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 VALUES 0.5 pF 0.5 pF 1.0 pF 0.75 pF 1.0 pF 1.0 pF 1.0 pF 1.0 pF 10 nF 10 nF
UPA901TU TYPICAL CHARACTERISTICS (TA = +25C , VCE = 3.6 V, RBIAS = 680 , f = 5.8 GHz, unless otherwise specified)
OUTPUT POWER, TOTAL CURRENT, TOTAL POWER EFFICIENCY vs. INPUT POWER
25 Output Power Pout (dBm) Total Current Itotal (mA) Total Power Efficiency total (%)
OUTPUT POWER, TOTAL CURRENT, vs. INPUT POWER
24 Output Power Pout (dBm) 22 20 18 16 14 12 10 -10 -8 -6 -4 -2 0 2 4 6 Itotal Pout 280 VCE = 4.2 V 3.8 V 240 3.6 V 3.3 V 200 2.8 V 160 4.2 V 3.8 V 120 3.6 V 3.3 V 2.8 V 80 40 0
total =
Pout x 100 (%) VCE x Itotal
200
20 Pout 15 Itotal 10
150
100
50
total
5 -15 -10 -5 0 0 5
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, TOTAL CURRENT, vs. INPUT POWER
24 Output Power Pout (dBm) 22 20 18 16 14 12 10 -10 -8 -6 -4 -2 0 2 4 6 Itotal Bias Circuit Current IBIAS (mA) f = 5.725 GHz 5.800 GHz 5.850 GHz Pout 280 240 200 160 120 80 40 0 Total Current Itotal (mA)
BIAS CIRCUIT CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
15 RBIAS = 300 10
5
680 1000
0 0
2000 1 2 3 4 5
Input Power Pin (dBm)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
Total Current Itotal (mA)
UPA901TU PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT:mm)
(Top View)
2.00.1
(Bottom View)
(0.65) (0.65) (0.6) (0.3) 0.40.1 (0.35) (0.35) 0.160.05 0.40.1 (1.4)
8
2.20.05 2.00.1
7
6
5
5
6
7
8
(0.5) (0.5)
1
2
3
4
(0.25) (0.25) (0.75) (0.75)
(0.6)
(0.35)(0.35)
A901
(0.6)
Remark ( ) : Reference value
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
0.50.03
0.125+0.1 -0.05
4
3
2
1
02/15/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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