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Transistors with built-in Resistor
UNR4221/4222/4223/4224
(UN4221/4222/4223/4224)
Silicon NPN epitaxial planar type
For digital circuits Features
* Costs can be reduced through downsizing of the equipment and reduction of the number of parts * New S type package, allowing supply with the radial taping
0.75 max.
Unit: mm
4.00.2 (0.8) 3.00.2 0.45+0.20 -0.10 15.60.5 (0.8) 7.6 2.00.2
Resistance by Part Number
* * * * UNR4221 UNR4222 UNR4223 UNR4224 (UN4221) (UN4222) (UN4223) (UN4224) (R1) 2.2 k 4.7 k 10 k 2.2 k (R2) 2.2 k 4.7 k 10 k 10 k
(2.5) (2.5)
0.45+0.20 -0.10 0.70.1
1
2
3
1: Emitter 2: Collector 3: Base NS-B1 Package
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 500 300 150 -55 to +150 Unit V V mA mW C C
Internal Connection
R1 B R2 E C
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio UNR4221 UNR4222 UNR4223/4224 UNR4221 UNR4222 UNR4223/4224 Collector-emitter saturation voltage Output voltage high-level Output voltage low-level VCE(sat) VOH VOL IC = 100 mA, IB = 5 mA VCC = 5 V, VB = 0.5 V, RL = 500 VCC = 5 V, VB = 3.5 V, RL = 500 4.9 0.2 hFE VCE = 10 V, IC = 100 mA 40 50 60 0.25 V V V Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 1.0 1.0 5.0 2.0 1.0 Typ Max Unit V V A A mA
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003 SJH00021BED
1
UNR4221/4222/4223/4224
Electrical Characteristics (continued) Ta = 25C 3C
Parameter Transition frequency Input resistance UNR4221/4224 UNR4222 UNR4223 Resistance ratio UNR4224 R1/R2 0.8 0.17 Symbol fT R1 Conditions VCB = 10 V, IE = -50 mA, f = 200 MHz -30% Min Typ 200 2.2 4.7 10 1.0 0.22 1.2 0.27 +30% Max Unit MHz k
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
400
Total power dissipation PT (mW)
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of UNR4221 IC VCE
IB = 1.0 mA 250 Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
hFE IC
400 VCE = 10 V
300
Collector current IC (mA)
0.9 mA 200 0.8 mA 0.7 mA 150 0.6 mA 0.5 mA 100 0.4 mA 0.3 mA 50 0.2 mA 0 0.1 mA 10 12
Forward current transfer ratio hFE
10
300
Ta = 75C
1 Ta = 75C 25C 10-1 -25C 10-2
200
25C 100
-25C 0
102 103
0
2
4
6
8
1
10
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJH00021BED
UNR4221/4222/4223/4224
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
24 f = 1 MHz IE = 0 Ta = 25C
104
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
20
Output current IO (A)
16
15
102
Input voltage VIN (V)
103
10
1
8
10
10-1
4
0 10-1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10-2 10-1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4222 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
hFE IC
200 VCE = 10 V
300
Forward current transfer ratio hFE
250
Collector current IC (mA)
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA
Ta = 75C 150 25C
10
200
150
1
Ta = 75C 25C
100
-25C
100
0.4 mA 0.3 mA
10-1 -25C 10-2
50
50
0.2 mA 0.1 mA
0
0
2
4
6
8
10
12
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
12 f = 1 MHz IE = 0 Ta = 25C 104
IO VIN
VO = 5 V Ta = 25C 102
VIN IO
VO = 0.2 V Ta = 25C
10
Output current IO (A)
8
6
102
Input voltage VIN (V)
103
10
1
4
10
10-1
2
0 10-1
1
10
102
1 0.4
0.6
0.8
1.0
1.2
1.4
10-2 10-1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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3
UNR4221/4222/4223/4224
Characteristics charts of UNR4223 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10 200 VCE = 10 V
hFE IC
240
200
Forward current transfer ratio hFE
Ta = 75C 150
25C
Collector current IC (mA)
10
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
120
1 25C 10
-1
Ta = 75C
100 -25C 50
80
0.5 mA 0.4 mA
40
0.3 mA 0.2 mA 0.1 mA
-25C 10-2
0
0
2
4
6
8
10
12
1
10
102
103
0
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
12 f = 1 MHz IE = 0 Ta = 25C
103
IO VIN
VO = 5 V Ta = 25C
VIN IO
102 VO = 0.2 V Ta = 25C
10
Output current IO (A)
103
8
6
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
10
1
4
10
10-1
2
0 10-1
1
10
102
1 0.4
10-2 10-1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR4224 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102 IC / IB = 10
hFE IC
200 VCE = 10 V
300
250
Forward current transfer ratio hFE
Ta = 75C 150
25C
Collector current IC (mA)
10
200
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA
-25C 100
150
1
Ta = 75C 25C
100
10-1 -25C 10-2
50
50
0.3 mA 0.2 mA 0.1 mA
0
0
1 10 102 103
0
2
4
6
8
10
12
1
10
102
103
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
4
SJH00021BED
UNR4221/4222/4223/4224
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
12 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C 103
VIN IO
VO = 0.2 V Ta = 25C
10
Output current IO (A)
103
8
5
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
102
10
4
10
1
2
0 10-1
1
10
102
1 0.4
10-1 10-1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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5
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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