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| EMZ2 / UMZ2N / IMZ2A Transistors Power management (dual transistors) EMZ2 / UMZ2N / IMZ2A Feature 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. External dimensions (Unit : mm) EMZ2 0.22 (4) (5) (6) (3) (2) 0.13 EMZ2 / UMZ2N (3) (2) (1) IMZ2A (4) (5) (6) ROHM : EMT6 Tr2 Tr1 Tr2 Tr1 Each lead has same dimensions (4) 0.65 1.3 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.65 (4) (5) (6) (3) (2) (1) 0.2 (3) UMZ2N (2) 0.5 Equivalent circuits 1.2 1.6 (1) 0.5 0.5 1.0 1.6 (6) 1.25 Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power EMZ2, UMZ2N dissipation IMZ2A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits Tr1 -60 -50 Tr2 60 50 Unit V V V mA mW C C 0.15 2.1 0.1Min. 0to0.1 -6 7 -150 150 150 (TOTAL) 300 (TOTAL) 150 -55 to +150 1 2 ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions IMZ2A (6) (4) 1.6 2.8 Package, marking, and packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) EMZ2 EMT6 Z2 T2R 8000 UMZ2N UMT6 Z2 TR 3000 IMZ2A SMT6 Z2 T108 3000 0.15 0.3to0.6 0to0.1 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions (3) 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. 0.3 (5) (2) (1) (1) Rev.A 2.0 (5) 1/4 EMZ2 / UMZ2N / IMZ2A Transistors Electrical characteristics (Ta=25C) Tr1 (PNP) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -6 - - - 120 - - Typ. - - - - - - - 140 4 Max. - - - -0.1 -0.1 -0.5 560 - 5 Unit V V V A A V - MHz pF IC = -50A IC = -1mA IE = -50A VCB = -60V VEB = -6V IC/IB = -50mA/-5mA VCE = -6V , IC = -1mA VCE = -12V , IE = 2mA , f = 100MHz VCB = -12V , IE = 0A , f = 1MHz Conditions Transition frequency of the device. Tr2 (NPN) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 60 50 7 - - - 120 - - Typ. - - - - - - - 180 2 Max. - - - 0.1 0.1 0.4 560 - 3.5 Unit V V V A A V - MHz pF IC = 50A IC = 1mA IE = 50A VCB = 60V VEB = 7V Conditions IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = -2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz Transition frequency of the device. Electrical characteristics curves PNP Tr -50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 Ta=100C 25C -40C VCE= -6V -10 -35.0 Ta=25C -100 -31.5 -28.0 -24.5 Ta=25C -8 -80 -6 -21.0 -17.5 -60 -500 -450 -400 -350 -300 -250 -200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A -20 -50A IB=0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.4 -0.8 -1.2 IB=0 -1.6 -2.0 0 -1 -2 -3 -4 -5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Rev.A 2/4 EMZ2 / UMZ2N / IMZ2A Transistors VCE= -5V -3V -1V DC CURRENT GAIN : hFE 200 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 Ta=25C Ta=100C 25C -40C -1 Ta=25C DC CURRENT GAIN : hFE -0.5 200 100 -0.2 100 IC/IB=50 -0.1 20 10 50 50 VCE= -6V -5 -10 -20 -50 -100 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -1 1000 20 -0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE= -12V Cib 10 500 Ta=25C f=1MHz IE=0A IC=0A Co b -0.2 Ta=100C 25C -40C 200 5 -0.1 100 2 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 50 0.5 1 2 5 10 20 50 100 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage NPN Tr 50 COLLECTOR CURRENT : IC (mA) 100 VCE=6V Ta=25C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 20 10 5 Ta=100C 25C -55C 80 0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA 10 Ta=25C 30A 27A 8 24A 21A 60 0.25mA 0.20mA 6 18A 15A 2 1 40 0.15mA 0.10mA 4 12A 9A 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 2 6A 3A 0 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Grounded emitter propagation characteristics Fig.11 Grounded emitter output characteristics ( ) Fig.12 Grounded emitter output characteristics ( ) Rev.A 3/4 EMZ2 / UMZ2N / IMZ2A Transistors 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 VCE=5V Ta=25C 0.5 Ta=100C Ta=25C DC CURRENT GAIN : hFE 200 VCE=5V 3V 1V DC CURRENT GAIN : hFE 200 25C -55C 0.2 IC/IB=50 20 10 100 100 0.1 0.05 50 50 0.02 20 10 0.2 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.13 DC current gain vs. collector current ( ) Fig.14 DC current gain vs. collector current ( ) Fig.15 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=10 0.5 TRANSITION FREQUENCY : fT (MHz) IC/IB=50 500 Ta=25C VCE=6V 0.2 Ta=100C 25C -55C 0.2 0.1 0.05 0.1 0.05 Ta=100C 25C -55C 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( ) Fig.17 Collector-emitter saturation voltage vs. collector current () Fig.18 Gain bandwidth product vs. emitter current BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 10 Cib Ta=25C f=1MHz IE=0A IC=0A 200 Ta=25C f=32MHZ VCB=6V 100 5 50 2 Co b 20 1 0.2 0.5 1 2 5 10 20 50 10 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.20 Base-collector time constant vs. emitter current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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