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| TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications * * * * * Low drain-source ON resistance: RDS (ON) = 72 mU (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = -10 iA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V(VDS =-10 V, ID = -200 iA) Low forward voltage: VFM = 0.46V(typ.) Unit: mm Maximum Ratings MOSFET (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) (Note 1) (Note 1) (Note 4) Symbol VDSS VDGR VGSS ID IDP EAS IAR EAR Rating -20 -20 8 -2.7 -10.8 1.2 -1.35 0.11 Unit V V V A mJ A mJ 1. Anode 2. Anode 3.Source 4. Gate 5. Drain 6. Drain 7. Cathode 8. Cathode JEDEC JEITA TOSHIBA Weight: 0.011 g (typ.) SBD (Ta = 25C) Characteristics Repetitive peak reverse voltage Average forward current (Note 2a, 6) Peak one cycle surge forward current (non-repetitive) Symbol VRRM IF(AV) IFSM Rating 20 1.0 7(50Hz) Unit V A A Circuit Configuration 8 7 6 5 Maximum Ratings for MOSFET and SBD (Ta = 25C) Characteristics Single-device operation Drain power (Note 3a) dissipation Single-device value at (t = 5 s) (Note 2a) dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Channel temperature Storage temperature range Symbol PD (1) PD (2) PD (1) PD (2) Tch Tstg Rating 1.35 1.12 0.53 0.33 150 -55~150 C C 1 4 W Unit 1 2 3 4 Marking (Note 7) 8 5 F8A Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page. 1 2003-04-08 TPCF8B01 Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 C/W 111.6 235.8 C/W 378.8 Unit This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 ('PE t: mm) FR-4 25.4 x 25.4 x 0.8 ('PE : mm) (a) 25.4 (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = -16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -1.35 A Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature. o Note 6: Rectangular waveform ( =180 ), VR =15V. Note 7: Black round marking "*oelocates on the left lower side of parts number marking "F8A" indicates terminal " No. 1. 2 2003-04-08 TPCF8B01 Electrical Characteristics (Ta = 25C) MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 ID = -1.4 A VOUT RL = 7.14 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8V VDS = -10 V, ID = -200 A VGS = -1.8 V, ID = -0.7 A VGS = -2.5 V, ID = -1.4A VGS = -4.5 V, ID = -1.4 A VDS = -10 V, ID = -1.4 A Min -20 -12 -0.5 2.4 Typ. 215 110 72 4.7 470 70 80 5 9 8 26 6 4 2 Max 10 -10 -1.2 300 160 110 ns nC pF S m Unit A A V V VDD -10 V - Duty < 1%, tw = 10 s = VDD -16 V, VGS = -5 V, - ID = -2.7 A MOSFET Source-Drain Ratings and Characteristics Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -2.7 A, VGS = 0 V Min Typ. Max -10.8 -1.2 Unit A V SBD Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol VFM(1) VFM(2) IRRM Cj Test Condition IFM = 0.7 A IFM = 1.0 A VRRM = 20 V VR = 10 V, f = 1 MHz Min Typ. 0.43 0.46 54 Max 0.49 50 Unit V V A pF 3 2003-04-08 TPCF8B01 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2003-04-08 |
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