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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
Copyright (c) 1997, Power Innovations Limited, UK NOVEMBER 1986 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
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Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE `1082 V(Z) V - 58 V(BO) V - 82
TO-220 PACKAGE (TOP VIEW)
A(T) C(G) B(R)
1 2 3
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Planar Passivated Junctions Low Off-State Current < 10 A Rated for International Surge Wave Shapes
WAVE SHAPE 8/20 s 10/160 s 10/560 s 0.2/310 s 10/700 s 10/1000 s STANDARD ANSI C62.41 FCC Part 68 FCC Part 68 RLM 88 FTZ R12 VDE 0433 CCITT IX K17/K20 REA PE-60 ITSP A 150 60 45 38 50 50 50 50
Pin 2 is in electrical contact with the mounting base.
MDXXANA
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device symbol
A(T) B(R)
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UL Recognized, E132482
C(G)
description
The TISP1082 is designed specifically for telephone line card protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B. Negative transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides. Positive transients are clipped by diode action.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s) 10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s) 5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s) 0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s) 5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s) 5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s) 10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s) 10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s) Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2) Initial rate of rise of on-state current, Junction temperature Operating free - air temperature range Storage temperature range Lead temperature 1.5 mm from case for 10 s Tstg Tlead Linear current ramp, Maximum ramp value < 38 A ITSM diT/dt TJ ITSP 150 60 50 38 50 50 45 50 10 250 150 0 to 70 -40 to +150 260 A rms A/s C C C C A SYMBOL VALUE UNIT
NOTES: 1. Above 70C, derate linearly to zero at 150C case temperature 2. This value applies when the initial case temperature is at (or below) 70C. The surge may be repeated after the device has returned to thermal equilibrium. 3. Most PTT's quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting loaded current waveform is specified. .
electrical characteristics for the A and B terminals, TJ = 25C
PARAMETER VZ ID Coff NOTE Reference zener voltage Off-state leakage current Off-state capacitance IZ = 1mA VD = 50 V VD = 0 f = 1 kHz (see Note 4) 1 TEST CONDITIONS MIN 58 10 5 TYP MAX UNIT V A pF
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge.
electrical characteristics for the A and C or the B and C terminals, TJ = 25C
PARAMETER VZ VZ Reference zener voltage Temperature coefficient of reference voltage Breakover voltage Breakover current Forward voltage Peak on-state voltage Holding current Critical rate of rise of off-state voltage Off-state leakage current Off-state capacitance (see Notes 5 and 6) (see Note 5) IF = 5 A IT = - 5 A (see Note 5) (see Note 7) VD = - 50 V VD = 0 f = 1 kHz (see Note 4) 300 (see Notes 5 and 6) (see Notes 5 and 6) - 150 -5 - 10 500 - 2.2 - 0.15 IZ = - 1mA TEST CONDITIONS MIN - 58 0.1 - 82 - 0.6 3 -3 TYP MAX UNIT V %/oC V A V V mA kV/s A pF
V(BO) I(BO) VF VTM IH dv/dt ID Coff
NOTES: 5. These parameters must be measured using pulse techniques, tw = 100 s, duty cycle 2%. 6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm (0.125 inch) from the device body. 7. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum)..
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS A AND B
Figure 2. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS A AND C OR B AND C
Polarity is determined at terminal A or B with respect to C
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
thermal characteristics
PARAMETER RJA Junction to free air thermal resistance MIN TYP MAX 62.5 UNIT C/W
TYPICAL CHARACTERISTICS A and C, or B and C terminals
ON-STATE AND FORWARD CURRENTS vs ON-STATE AND FORWARD VOLTAGES
IT , IF - On-State Current, Forward Current - A VZ , V(BO) - Zener Voltage, Breakover Voltage - V 1000 IF IT 100
TCR1LAA
ZENER AND BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE
85
TCR1LAB
80
75 VZ 70 V(BO) 65 VZ V(BO)
10
IF
IT
60
1 1 10 VT , VF - On-State Voltage, Forward Voltage - V 100
55 -25
0
25
50
75
100
125
150
TJ - Junction Temperature - C
Figure 3.
Figure 4.
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS A and C, or B and C terminals
HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE
IH , I(BO) - Holding Current, Breakover Current - A 1
TCR1LAC
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
10 VD = -50 V
TCR1LAD
IH 0*1 IH I(BO)
ID - Off-State Current - A 150
I(BO)
1
0*1
0*01
0*01 -25
0
25
50
75
100
125
0*001 -25
0
25
50
75
100
125
150
TJ - Junction Temperature - C
TJ - Junction Temperature - C
Figure 5.
Figure 6.
ON-STATE VOLTAGE & FORWARD VOLTAGE vs JUNCTION TEMPERATURE
3.0 VT , VF - On-State Voltage, Forward Voltage - V
TCR1LAE
NORMALISED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT
2.00
TCR1LAI
Normalised Breakover Voltage
2.5
IT = -5A IF = 5A VT
1.75
2.0
1.5 VF 1.0
1.50
1.25
0.5
0.0 -25
0
25
50
75
100
125
150
1.00 0*001
0*01
0*1
1
10
100
TJ - Junction Temperature - C
di/dt - Rate of Rise of Principle Current - A/s
Figure 7.
Figure 8.
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS A and C, or B and C terminals
PEAK DIODE FORWARD VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT
100 Diode Forward Voltage Overshoot - V
TCR1LAJ
OFF-STATE CAPACITANCE vs A OR B TERMINAL VOLTAGE (POSITIVE)
1000 Third terminal = 0 to -50 V
TCR1LAK
75
50
25
0 0*001
Off-State Capacitance - pF 0*01 0*1 1 10 100 100 0*01
0*1 A or B Terminal Voltage (Positive) - V
1
di/dt - Rate of Rise of Principle Current - A/s
Figure 9.
Figure 10.
OFF-STATE CAPACITANCE vs A OR B TERMINAL VOLTAGE (NEGATIVE)
1000 Third terminal = 0 to -50 V
TCR1LAL
Off State Capacitance - pF
100
10 1 10 A or B Terminal Voltage (Negative) - V 100
Figure 11.
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS A and B terminals
ZENER VOLTAGE & BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE
85 VZ , V(BO) - Zener Voltage, Breakover Voltage - V
TCR1LAF
HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE
1 IH , I(BO) - Holding Current, Breakover Current - A I(BO)
TCR1LAG
80
75 VZ 70 V(BO) 65 VZ 60 V(BO)
IH 0*1
IH
I(BO)
55 -25
0
25
50
75
100
125
150
0*01 -25
0
25
50
75
100
125
150
TJ - Junction Temperature - C
TJ - Junction Temperature - C
Figure 12.
Figure 13.
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
10
TCR1LAH
Vd = 50 V ID - Off-State Current - A 1
0*1
0*01
0*001 -25
0
25
50
75
100
125
150
TJ - Junction Temperature - C
Figure 14.
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS A and B terminals
OFF-STATE CURRENT OFF-STATE CAPACITANCE vs vs A OR B JUNCTION TEMPERATURE TERMINAL VOLTAGE (POSITIVE)
100 10 VD for C V Only = 50 = +50 V 1.2 ID - Off-State Current - A Off-State Capacitance - pF 10 Normalised Breakdown Voltages Off-State Capacitance - pF
TC2LAK TCR1LAM
NORMALISED BREAKDOWN VOLTAGES OFF-STATE CAPACITANCE vs vs A OR B TERMINAL VOLTAGE (NEGATIVE) JUNCTION TEMPERATURE
10 Normalised to V Only for C = +50 V (BR) I(BR) = 100 A and 25C Both Polarities V(BR)M 1.1 1
TC2LAN TCR1LAN
1 1 0*1
V(BO) 1.0 V(BR)
0*01
0*001 0*1 1
-25
0
25
50 10
75
100
125 100 150
0.9 0*1
1 -25
0
25
50 10
75
100
125
150 100
TTerminal Voltage (Positive) A or B J - Junction Temperature - C V
TJ Junction Temperature - C A or B-Terminal Voltage (Negative) - V
Figure 15.
Figure 16.
NORMALISED BREAKOVER VOLTAGE SURGE CURRENT vs vs RATE OF RISE OF PRINCIPLE CURRENT DECAY TIME
2.5 1000
TCR1LAO TC2LAG
Maximum Breakover Voltage NormalisedSurge Current - A
2.0
100
1.5
1.0 10 0*001 2
0*01 10
0*1
1 100
10
100 1000
di/dt - Rate of Rise of Principle Current - A/s Decay Time - s
Figure 17.
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
MAXIMUM NON-RECURRENT 50Hz CURRENT vs CURRENT DURATION
TIR1LAA
THERMAL RESPONSE
IRMS - Maxmimun Non-Recurrent 50Hz Current - A
100
10
TCR1LAB
ZJA - Transient Thermal Impedance - C/W
10
1
1
0*1 VGEN = 250 VRMS RGEN = 20 to 1000 ohms TAMB = 70C 0*01 0*01 0*1 1 t - Current Duration - s 10 100
0*1 0*0001
0*001
0*01
0*1
1
10
100
1000
t - Power Pulse Duration - s
Figure 18.
Figure 19.
FREE AIR TEMPERATURE DERATING CURVE
100
TIR1LAC
Percent of Rated Power - %
80
60
40
20
0
25
50
75
100
125
150
TA - Free Air Temperature - C
Figure 20.
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
MECHANICAL DATA
TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
PRODUCT
INFORMATION
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TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
PRODUCT
INFORMATION
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