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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM7785-35SL
TECHNICAL DATA FEATURES
n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB G1dB IDS1 G
( Ta= 25C )
UNIT dBm dB A dB % MIN. 45.0 5.0 -42 TYP. MAX. 45.5 6.0 8.0 33 -45 8.0 9.0 0.8 9.0 100
CONDITIONS
VDS=10V f = 7.7 to 8.5GHz
add
IM3 IDS2 Two-Tone Test Po=35.0dBm
(Single Carrier Level)
dBc A C
Channel Temperature Rise Tch VDS X IDS X Rth(c-c) Recommended Gate Resistance(Rg): 28 (Max.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
( Ta= 25C )
UNIT mS V A V C/W MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 26 1.3
gm
VGSoff IDSS VGSO Rth(c-c)
CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Channel to Case
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
Rev. Nov. 2003
TIM7785-35SL
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage
( Ta= 25C )
SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 26 115 175 -65 to +175
PACKAGE OUTLINE (2-16G1B)
0.70.15 4 - C1.0 2.5 MIN. Unit in mm
*
* Gate Source Drain
20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX.
+0.1
2.5 MIN.
2.60.3
17.40.4
8.00.2
0.2 MAX.
1.40.3
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C.
2
2.40.3
5.5 MAX.
TIM7785-35SL
RF PERFORMANCE Output Power (Pout) vs. Frequency
Pout(dBm)
VDS=10V
47
IDS8.0A Pin=39.5dBm
46
45
44
7.7
7.9
8.1
8.3
8.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=8.5GHz VDS=10V
46 80 70
Pout(dBm)
44
60 50
42
40
add
40
30 20 10
34
36
38
40
Pin(dBm)
3
add(%)
Pout
TIM7785-35SL
Power Dissipation(PT) vs. Case Temperature(Tc)
120
100
PT(W)
80
60
40
20 0 40 80 120 160 200
Tc( C )
IM3 vs. Output Power Characteristics
-10
VDS=10V
-20
freq.=8.5GHz f=5MHz
-30
IM3(dBc)
-40
-50
-60 30 32 34 36 38 40
Pout(dBm) @Single carrier level
4
TIM7785-35SL
TIM7785-35SL S-PARAMETERS (MAGN. and ANGLES)
VDS=10V, IDS=8.0A
f=7.5 to 8.7 GHz
7.7 7.5 8.5 8.3 8.1 7.9
7.9 8.1 8.3 8.7 8.5 8.7
7.5 7.7
FREQUENCY (GHz) 7.50 7.70 7.00 8.10 8.30 8.50 8.70 MAG
S11 ANG -58.883 -95.847 -125.79 -153.45 177.35 141.44 61.355 MAG -8.9814 -8.3276 -8.2456 -9.079 -11.201 -15.55 -23.587
S12 ANG -132.94 178.84 131.47 83.846 35.074 -15.135 -66.763 MAG 7.7466 7.6201 7.5867 7.6876 7.8387 7.9431 7.8793
S21 ANG -157.88 153.1 105.53 58.534 10.528 -38.853 -89.791 MAG -26.718 -26.03 -25.415 -24.785 -24.184 -23.802 -23.776
S22 ANG 135.77 113.8 90.07 62.308 28.383 -11.132 -55.383 -6.814 -7.7217 -8.8479 -10.106 -11.394 -12.511 -13.44
5

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