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| Advance Product Information November 16, 2004 10Gb/s Differential TIA * * * * * * * * * 0 CPD = 0.2 pF RPD = 15 Ohm TGA4815-EPU Key Features and Performance 6500 Single-Ended Transimpedance >10GHz 3dB Bandwidth 1.7mApp Maximum Input Current 9pA/ Hz Input Noise Current Adjustable Output Offset Rx Signal Indicator (RSSI) 0.15m 3MI pHEMT Technology Bias Conditions: 3.3V, 80mA Chip dimensions: 1.78 x 0.96 x 0.1 mm (0.070 x 0.038 x 0.004 inches) Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA 84 Transimpedance (dB-Ohm) 78 Differential TZ Output Return Loss (dB) -3 Non-Inverting Output Inverting Output Primary Applications * OC-192/STM-64 Fiber Optic Systems 72 66 60 54 48 1 -6 -9 -12 -15 -18 3 5 7 9 11 Frequency (GHz) 13 15 10.7Gb/s, 231-1 PRBS, Optical Pin = -14 dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 1 Advance Product Information November 16, 2004 TABLE I MAXIMUM RATINGS Symbol VPOS IPOS PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Parameter 1/ Positive Supply Voltage Positive Supply Current (Quiescent) Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value 5.5 V 90 mA 14.5 dBm TBD 150 C 320 C -65 to 150 C 0 0 0 TGA4815-EPU Notes 2/ 2/ 2/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 2 Advance Product Information November 16, 2004 TGA4815-EPU TABLE II RF CHARACTERIZATION TABLE (TA = 25qC, Nominal) (VPOS = 3.3V, IPOS = 80mA r5%) 1/ Parameter Single-Ended Transimpedance (1GHz) 3dB Transimpedance Bandwidth Low Frequency 3dB Cut-Off Transimpedance Ripple (1 to 8GHz) Group Delay Variation (0.1 to 8GHz) Ave Eq. Noise Current (0.1 to 8GHz) Output Return Loss (0.1 to F3dB) Input Overload Current Input Sensitivity (BER = 10 -12 Notes 2/ 3/ 4/ 2/ 3/ 2/ 3/ 2/ 3/ 2/ 3/ Typical 6500 10 30 0.3 15 9 12 1.7 -20 600 Unit GHz kHz dBpp ps pA/Hz dB mApp dBm mVpp ) Single-Ended Limited Output Voltage Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured measurements. 1/ 2/ 3/ 4/ 50 Single-Ended Output Impedance Photodiode Model: CPD = 0.2pF, RPD = 15 RF Interconnect Inductance: 0.42nH External Bypass Capacitors Required (see assembly drawing) TABLE III THERMAL INFORMATION Parameter Test Conditions TCH (oC) RTJC (qC/W) TM (HRS) V+ = 3.3 V RJC Thermal I+ = 80 mA 80 36.9 5.7 E+7 Resistance (channel to backside of Pdiss = 0.264 W carrier) Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 3 Advance Product Information November 16, 2004 Typical Fixtured Performance 80 Single-Ended Transimpedance (dB-Ohm) 77 74 71 68 65 62 59 56 1 3 5 7 9 11 -25 deg C + 0 deg C +25 deg C +50 deg C +75 deg C TGA4815-EPU CPD = 0.2 pF RPD = 15 Ohm 13 15 Frequency (GHz) 0.95 0.90 RSSI Voltage (V) 0.85 0.80 0.75 0.70 0.65 0.0 0.2 0.4 0.6 RMS Photocurrent (mA) 0.8 1.0 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 4 Advance Product Information November 16, 2004 Mechanical Drawing TGA4815-EPU Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 5 Advance Product Information November 16, 2004 TGA4815-EPU Chip Assembly & Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 6 Advance Product Information November 16, 2004 TGA4815-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 7 |
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