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TA32305FN/FNG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA32305FN/TA32305FNG* RF 1chip Receiver and Transmitter for low power wireless The TA32305FN is an RF 1 chip receiver and transmitter IC. Receiver is for AM/FM radio. The IC incorporates an RF amp, 2-level comparator, and local x8 circuit. This IC's main use is remote control. Features * * * * * * RF frequency: 240 to 450 MHz (multiplication is used) IF frequency: 80 kHz Operating voltage range: 2.2 to 5.5 V Current dissipation: TX 4.3 mA/ RX 5.6 mA (FM), 5.3 mA (AM) (except current at oscillator circuit) Current dissipation at BS: 0 A (typ.) Small package: 30-pin SSOP (0.65 mm pitch) SSOP30-P-300-0.65 Weight: 0.17 g (typ) Block Diagram SAW 30 29 TX RX DATA DATA 28 RX 26 25 24 23 22 21 20 19 27 18 17 16 RF CHARGE RF RF TX LPF LPF AF RSSI MIX REF GND1 OUT OUT IN DEC IN IN OUT RSSI Comparator x8 OSC VCC1 IN 1 2 MIX U/L OUT 4 3 IFF IN 5 IFF OUT Detector TX AM/ TX IF Vcc2 IF IN GND2 OUT QUAD Vcc3 Power FM OUT 6 7 8 9 10 11 12 13 14 15 *: TA32305FNG Package is Pb-Free. 1 2003-12-04 TA32305FN/FNG Pin Description (the values of resistor and capacitor in the internal equivalent circuit are typical.) Pin No. Pin Name Function Internal Equivalent Circuit 50 k 10 k 10 k 1 OSC IN Local oscillator input pin. 1 2 pF 15 k 2 VCC1 Local' power supply pin. 3 U/L U/L switch pin. OPEN : Upper Local L : Lower Local Do not connect Vcc. 10 k 3 100 k Mixer output pin. 4 MIX OUT The output impedance of the pin is typically 225 . 5 IFF IN IF filter input pin. 5 6 200 4 15 k 6 IFF OUT IFfilter output pin. 7 VCC2 Power supply pin 2. 8 IF IN IF amp input pin. 10k 10k 200 10 8 10 IF OUT IF amp output pin. 9 GND2 GND pin 2. 2 2003-12-04 100 TA32305FN/FNG Pin No. Pin Name Function Internal Equivalent Circuit 32 k 11 10k *\ 15 13 10 k 14 120 k 19 10 k 3 k 16 17 250 18 100 k 5 k 11 QUAD Phase-shift input terminal for the FSK Demodulator. 12 Vcc3 Power supply pin 3. 13 TX Power Regulating TX output power pin. 15 TX OUT TXsignal output pin. 14 AM/FM Changeover switch for AM/ FM. OPEN : AM L : FM Do not connect Vcc. 16 RF IN RF signal input pin. 17 RF DEC Emitter pin for internal transistor. 19 RF OUT RF amp output pin. 18 CHARGE Control terminal for quick charge circuit. To use the quick charge circuit, attach a capacitor. 3 32 k 2003-12-04 TA32305FN/FNG Pin No. Pin Name Function Internal Equivalent Circuit 21 GND1 GND pin 1. 2.4 k *\ 22 20 MIX IN Mixer input pin. 20 25 22 REF Threshold input terminal for 2-level FM/AM comparator. 26 250 100 k 5 k 33 k 100 k COMP DATA 330 24 AF OUT Output terminal for FM demodulator. 24 25 LPF IN FM/AM LPF input pin. 5 k 25 26 250 26 LPF OUT FM/AM LPF output pin. 27 TX Battery saving pin for transmitter. 27 41 k 24 k 23 RSSI RSSI output pin. This pin is connected internal circuit. MONI pin during transmitting. 23 4 2003-12-04 TA32305FN/FNG Pin No. Pin Name Function Internal Equivalent Circuit 28 RX Battery saving pin for receiver. 28 30 k 29 TX DATA AM modulation switch for transmitter. L : Output ON H : Output FF 28 97 k 30 RX DATA FM/AM waveform shaping output pin for receiver. Open collector output. Connect a pull-up resistor. 30 2 k Equivalent circuits are given to help understand design of the external circuits to be connected. They do not accurately represent the internal circuits. 5 2003-12-04 TA32305FN/FNG Functions 1. Waveform Shaper Circuit (comparator) The output data (pin 30) are inverted. 2. RSSI Function DC potential corresponding to the input level of IF IN (pin 8) is output to RSSI (pin 23). Output to RSSI (pin 23) is converted to a voltage by the internal resistance. Thus, connecting external resistance R to pin 21 varies the gradient of the RSSI output as shown below. Note that due to the displacement of temperature coefficients between external resistor R and the internal IC resistor IC resistor, the temperature characteristic of the RSSI output may change. Also, the maximum RSSI value should be VCC - 0.8 V or less. 24 k 23 R After R is connected IF input level Figure 1 3. S Curve Characteristics Figure 2 Changing external capacitance C27 varies the gradient of the S curve characteristics as shown below. In case of widening the detection range, heightening IF frequency or lowering demodulation output, make the gradient of the S curve characteristics gentle less than typical (120pF). When using this IC by about 2.2V (low supply), set the constant of C27 100pF or add attenuator to AF OUT (24 pin). After C is lessened IF frequency Figure 3 4. VCC Pin and GND Pin Use the same voltage supply for VCC1 (2 pin) and VCC2 (7 pin) and VCC3 (12 pin) (or connect them). Also, use the same voltage supply source for GND1 (21 pin) and GND2 (9 pin) (or connect them). 5. Local Oscillator Circuit The local oscillator circuit is external-input-only. The device incorporates no transistor for oscillation. Input to pin 1 at a level from 92 to 105dBV. Adjust the values of constants C shown in the application circuit diagram so that the input level will become approximately 100dBV. 6. U/L switch pin It is possible to switch Mixer output frequency to upper local or lower local comparing RF input frequency. 6 2003-12-04 TA32305FN/FNG 7. RF Amp Current Adjustment The RF amp current dissipation can be regulated by varying resistor R as shown in the figure below. When R = 560 , the current dissipation is approximately 600 A. 17 RF DEC Figure 4 8. Battery-Saving (BS) Function The IC incorporates a battery-saving function. These functions offer the following selection. Receiver FM Mode (FM/AM pin: GND) RX Pin Circuit Status in the IC Circuits in operation: x8 circuit Mixer RF amp Comparator IF amp Detector circuit RSSI Comparator capacitor charger circuit All circuits IC Current Dissipation (at no signal) R H 5.6 mA (typ.) L 0 mA (typ.) AM Mode (FM/AM pin: OPEN) RX Pin Circuit Status in the IC ircuits in operation: x8 circuit Mixer RF amp Comparator IF amp RSSI Comparator capacitor charger circuit All circuits IC Current Dissipation (at no signal) H 5.3 mA (typ) L 0 mA (typ) Transmitter IC Current Dissipation (at no signal) TX Pin Circuits in operation: x8 circuit TX amp All circuits Circuit Status in the IC H L 4.3 mA (typ) 0 mA (typ) 7 2003-12-04 TA32305FN/FNG 9. RF Amp Gain 2 RF amp gain 2 (Gv (RF) 2) is a reference value calculated as follows. Measure GRF in the following figure. Gv (RF) 2 is calculated as follows: Gv (RF) 2 = GRF - Gv (MIX) 0.01 F 27 nH 1 k 6 pF 1000 pF 16 6 pF 33 nH SG 30dBV 20 19 4 GRF Figure 5 10. Waveform-Shaping Output Duty Cycle The specified range of electrical characteristics is only available for single-tone. 11. Treatment of FM Terminal when Using AM When using AM, it is not necessary to treat the QUAD pin (pin 11). Leave it open or connected to an FM external circuit. To use the bit rate filter, connect the RSSI pin (pin 23) to the bit rate filter through a resistor. The AF-OUT pin (pin 24) should be left open. R13 C18 R13 C18 R15 R R14 24 23 AF RSSI OUT Bit rate filter for FM C19 24 23 AF RSSI OUT Bit rate filter for AM Figure 6 Figure 7 8 2003-12-04 TA32305FN/FNG 12. Control Terminal for Quick Charge Circuit (CHARGE) CHARGE (18 pin) is control terminal for quick charge circuit. REF (22 pin) control terminal for quick charge a given period by time constant of internal resistance and outside capacitance. Enabling the CHARGE pin requires an external capacitor. In normal operation, connect a capacitor having the same capacitance as that of the capacitor connected to the REF pin (pin 22). If the connected external capacitor (C30) is 0.1 F, the quick charge time is 7 ms (typically). 13. Bit Rate Filter for FM The current FM bit rate filter is used as a tertiary filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. Quadratic Filter (NRZ) R12 1200 bps 2400 bps 4800 bps 9600 bps 68 k 68 k 68 k 68 k R13 68 k 68 k 68 k 68 k R14 68 k 68 k 68 k 68 k C14 0.01 F 4700 pF 2200 pF 1200 pF C15 560 pF 270 pF 150 pF 68 pF C18 3300 pF 1500 pF 680 pF 390 pF 14. Bit Rate Filter for AM The current AM bit rate filter is used as a quadratic filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. Quadratic Filter (NRZ) (the bit rate filter time constant takes into account the internal resistance RSSI (24 k)) R15 1200 bps 2400 bps 4800 bps 9600 bps 43 k 43 k 43 k 43 k R12 68 k 68 k 68 k 68 k C14 4700 pF 2200 pF 1000 pF 470 pF C15 1500 pF 680 pF 390 pF 180 pF In addition, the current AM bit rate filter can be used as a tertiary filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant. Quadratic Filter (NRZ) (the bit rate filter time constant takes into account the internal resistance RSSI (24 k)) R15 1200 bps 2400 bps 4800 bps 9600 bps 43 k 43 k 43 k 68 k R13 68 k 68 k 68 k 68 k R12 68 k 68 k 68 k 68 k C14 0.01 F 4700 pF 2200 pF 1200 pF C15 560 pF 270 pF 150 pF 68 pF C18 3300 pF 1500 pF 680 pF 390 pF For the cutoff frequency of the bit rate filter, specify a sufficiently high value for the bit rate to be used. Specifying a relatively high cutoff frequency for the bit rate filter enables a low capacitor to be used at the REF pin, therefore making the pulse rise quickly. When AM is used, the internal resistance of RSSI is used. So, take the output resistance into account when specifying a cutoff frequency. 9 2003-12-04 TA32305FN/FNG 15. Simple Image Cancel Mixer for Receiver The IC incorporates simple image cancel mixer for receiver. 16. TX Amp Current Adjustment The RF amp current dissipation can be regulated by varying resistor R as shown in the figure below. When R = 560 , the current dissipation is approximately 680 A.. 13 TX_POW Figure 8 R 10 2003-12-04 TA32305FN/FNG Cautions for Designing Circuit Board Patterns Observe the following cautions when designing circuit patterns for this product. Local Oscillator Circuit (pin 1) Isolate the local oscillator circuit block sufficiently from the RF amp block. Isolate the local oscillator circuit block securely so that its output will not get in the IF input, IF filter, or mixer input. Do not place the local oscillator circuit block too close to the ceramic filter. Subdivide the ground pattern for the local oscillator circuit block, and connect the subdivisions with thin lines. IF Input and Output Block (pin 8, 10) Isolate the input from output patterns of the IF filter and detector block securely from each other. Demodulator Circuit Block (pin 11) Isolate the demodulator circuit block sufficiently from the IF input block (pin 8). Do not place the LC too close to the IC device. Data Output Block (pin 30) Isolate the data output block sufficiently from the IF input block (pin 8). Isolate the output pattern of the data output block from other circuits as much as possible, so any noise from a stage subsequent to the output will not affect them. RF Amp Circuit Block 1) Preventing RF amp oscillation Do not place the patterns connected to pins 16 and 17 too close to each other. Isolate the patterns connected to the input block (pin 16) and output block (pin 19) from each other. Make the RF input signal line relatively thin. Place a relatively wide ground pattern between the RF-IN pin (pin 16) and RF-DEC pin (pin 17). Connect the RF-OUT pin (pin 19) and MIX-IN pin (pin 20) with the shortest possible pattern. Attaining a sufficient gain To attain a sufficient RF amp gain, select an optimum value for the input matching circuit block (pin 16) according to the board circuit pattern. Sharing antenna with receiver and transmitter Using hi power application, place the patterns connected to SAW filter and pin 15 close. 2) 3) IC Mounting Area Provide a ground pattern under the IC device, and prepare relatively many through holes. Cautions for mounting Mount better accurate constants of capacitance in IF filter block and detector block. 11 2003-12-04 TA32305FN/FNG Maximum Ratings (unless otherwise specified, Ta = 25C. the voltage is with reference to the ground level.) Characteristics Supply voltage Power dissipation Operating temperature range Storage temperature range Symbol VCC PD Topr Tstg Rating 6 860 -40~85 -55~150 Unit V mW C C The maximum ratings must not be exceeded at any time. Do not operate the device under conditions outside the above ratings. Operable Range (unless otherwise specified, Ta = 25C. the voltage is with reference to the ground level.) Characteristics Operating voltage range RF operating frequency Symbol VCC fRF Test Circuit Test Condition Min 2.2 250 Typ. 3.0 Max 5.5 450 Unit V MHz Operating ranges indicate the conditions for which the device is intended to be functional even with the electrical changes. Electrical Characteristics (unless otherwise specified: Ta = 25C, VCC = 3 V, U/L = OPEN, fin (RF) = fin (MIX) = 314.96 MHz, fin (IF) = 80 kHz)) Receiver Block Characteristics Current dissipation at battery saving RF amp gain 1 Mixer conversion gain RSSI output voltage 1 RSSI output voltage 2 RSSI output voltage 3 RSSI output resistance Comparator input resistance RX data output voltage (L level) RX data output leakage current (H level) RX pin H-level input voltage RX pin L-level input voltage Symbol Icco Gv (RF) 1 Gv (MIX) VRSSI1 VRSSI2 VRSSI3 RRSSI RCOMP VRXDATAL IRXDATAH VRXH VRXL Test Circuit 3 1 (5) 1 (3) 1 (4) in AM mode Vin (MIX) = 50dBVEMF in AM mode Vin (MIX) = 80dBVEMF in AM mode IRXDATAL = 200 A Test Condition RX = "L",TX= "L" *\ -9.0 18 0.25 0.7 1.35 18 75 2.0 0 The input and output impedances are 50 . Vin (MIX) = 25dBVEMF Min Typ. 0 -6.5 21 0.5 1.0 1.7 24 100 0.04 0 Max 5 -4.0 24 0.75 1.3 2.05 30 125 0.4 2 5.5 0.2 Unit A dB dB V V V k k V A V V 12 2003-12-04 TA32305FN/FNG FM Mode (Ta = 25C, Vcc = 3.0 V, fin (RF) = fin (MIX) = 314.96 MHz, U/L = OPEN, fin (IF) = 80 kHz, dev = 8 kHz, fmod = 600 Hz ((single wave)) Characteristics Quiescent current consumption (for FM) Demodulated output level Waveform shaping duty ratio Symbol Iccqfm Vod DRfm Test Circuit 2 (1) 1 (2) Test Condition RX/FMAM = "H/ L" Fin (Lo) = 39.38 MHz Vin (MIX) = 60dBVEMF Vin (MIX) = 60dBVEMF For single tone Min 4.2 95 45 Typ. 5.6 130 50 Max 7.0 165 55 Unit mA mVrms % AM Mode (Ta = 25C, Vcc = 3.0 V, fin (RF) = fin (MIX) = 314.96 MHz, U/L = OPEN, fin (IF) = 80 kHz, AM = 90%, fmod = 600 Hz (square wave) ) Characteristics Quiescent current consumption (for AM) Reference characteristic data Symbol Iccqam Dram Test Circuit 2 (2) 1 (2) Test Condition RX/FMAM = "H/ OPEN" Fin (Lo) =39.38 MHz Vin (MIX) = 60dBVEMF For single tone Min 3.9 45 Typ. 5.3 50 Max 6.7 55 Unit mA % Transmitter Block Characteristics Quiescent current consumption (for Transmitter Mode) TXDATA pin H-level input voltage TXDATA pin L-level input voltage TX pin H-level input voltage TX pin L-level input voltage TXoutput signal level 1 Symbol Iccqtx VTXDATAH VTXDATAL VTXBSH VTXBSL VTX1 Test Circuit 2 (3) TX= "H" Test Condition Min 3.0 2.0 0 2.0 0 Typ. 4.3 -22.5 Max 5.6 5.5 0.2 5.5 0.2 -19.5 Unit mA V V V V dBm The output impedances are 50 -25.5 Reference Characteristic Data Characteristics RF amp gain 2 RF amp input resistance RF amp input capacitance RF amp output capacitance Mixer input resistance Mixer input capacitance Mixer intercept point IFamp gain Signal-to-noise ratio 1 Signal-to-noise ratio 2 TX amp output capacitance TX output signal level 2 * Test Circuit 1 (8) 1 (8) Test Condition Vin (MIX) = 20dBVEMF Vin (MIX) = 60dBVEMF Typ. 30 1.0 2.0 2.0 1.2 1.6 96 65 19 56 2.0 -14 Unit dB k pF pF k pF dBV dB dB dB pF dBm Symbol Gv (RF) 2 R (RF) IN C (RF) IN C (RF) OUT R (MIX) IN C (MIX) IN IP3 Gv (RF) S/N1 S/N2 C (TX) OUT VTX2 * : These characteristic data values are listed just for reference purposes. They are not guaranteed values. 13 2003-12-04 TA32305FN/FNG Typical Test Circuit (FSK) VCC C19 1000 pF C24 0.01 F 6 pF SAW C37 C35 R21 560 L3 33 nH 1000 pF C36 5 pF L2 22nH 3 C18 3300 pF VCC VCC VCC R13 0.01 F R19 1 k C15 560 pF 68 k C30* C22 27nH 0.1 F C25 6 pF 1000 pF R6 100 k R7 100 k R12 68 k 0.1 F L1 68 k C22 30 29 TX RX DATA DATA 28 RX C26 26 25 24 23 22 21 20 19 27 18 17 16 RF CHARGE RF RF TX LPF LPF AF RSSI REF GND1 MIX OUT OUT IN OUT IN DEC IN RSSI Comparator x8 C14 OSC IN 1 VCC1 2 MIX U/L OUT 4 3 R10 4.3 k 0.1 F IFF IN 5 R11 4.7 k IFF OUT Detector IF TX AM/ TX Vcc2 IF IN GND2 OUT QUAD Vcc3 Power FM OUT 9 6 7 8 10 11 12 13 14 15 C13 C31 1000 pF R20 560 R18 20 k 10 F C17 C28 120 pF C29 10 F R22 560 330 pF 0.1 F C12 R14 1000 pF C32 C20 VCC C16 1000 pF 120 pF VCC VCC Test Circuit 1 (1) VRSSI (2) DR 0.01 F 1 51 23 1000 pF V 51 SG 1 30 100 k 20 51 VCC V 2.0 V V V 2.0 V V 25 1.5 V V 25 22 30 100 k I = V/100 x 10 VCC 0.01 F SG 1000 pF 51 SG 20 1000 pF SG (3) VDATA L 1.5 V V 22 30 R = 100 k (4) IDATA H 14 2003-12-04 C33 0.01 F C34 VCC C27 6 pF TA32305FN/FNG (5) Gv (RF) 1 1000 pF 16 51 SG 19 SG 1000 pF (6) Gv (MIX) 0.01 F 1 51 120 pF 4 4.7 k 6 8 330 pF 1000 pF Buff 1 51 26 SG 1 19 560 17 19 5 1000 pF 51 0.01 F 4.3 k 1 51 120 pF 4 4.7 k 5 6 8 330 pF SG 1000 pF 1000 pF 51 SG 20 SG 20 (7) Gv (MIX) vs VLO 0.01 F SG (8) S/N1, 2 1000 pF 51 SG 20 Test Circuit 2 (1) Iccqfm 0.01 F 51 (2) Iccqam 0.01 F 51 21 7 12 28 12 560 9 1 21 27 13 2 27 A 2 7 12 15 A VCC 7 15 SG 560 1 9 27 17 19 28 A 2 VCC 560 9 17 21 27 14 28 A 2 7 12 Vcc Test Circuit 3 (3) Icctx 0.01 F 51 SG Icco 28 21 VCC 560 13 15 2003-12-04 TA32305FN/FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) Quiescent Current Consumption - Supply Voltage Characteristics 6 8 FM AM 4 TX 3 f (Lo) in = 39.38 MHz V (Lo) in = 100dBV 7 125*Z Quiescent Current Consumption - Supply Voltage Characteristics FM Mode Quiescent current consumption ICC (mA) Quiescent current consumption 5 6 (mA) 25*Z 5 4 -40*Z 3 2 1 0 f (Lo) in = 39.38 MHz V (Lo) in = 100dBV ** X C bswitching pin current No ' [ Z q is included. "d-- S U U 2 ** X C bswitching pin current No ' [ Z q is included. "d-- S U U 1 BS 0 0 1 2 3 4 5 6 ICCqfm 0 1 2 3 4 5 6 Supply voltage VCC (V) Supply voltage VCC (V) Quiescent Current Consumption - Supply Voltage Characteristics AM Mode 8 7 Quiescent Current Consumption - Supply Voltage Characteristics TX Mode 6 125*Z Quiescent current consumption 6 25*Z Quiescent current consumption 125*Z 5 (mA) ICCqam 4 -40* Z 3 2 1 0 0 1 2 3 4 5 6 f (Lo) in = 39.38 MHz V (Lo) in = 100dBV ** X C bswitching pin current No ' [ Z q is included. "d-- S U U (mA) 5 4 25*Z 3 ICCqtx -40*Z 2 f (Lo) in = 39.38 MHz V (Lo) in = 100dBV * - No ' [ Z q * X C bswitching pin current isd--included. *@" SUU 1 0 0 1 2 3 4 5 6 Supply voltage VCC (V) Supply voltage VCC (V) RF Amp Gain - Supply Voltage Characteristics 0 RF Amp Frequency Characteristics -5 (dB) (dB) -10 -40*Z -20 125*Z -30 25*Z -40 f(RF)in=314.96MHz V(RF)in=50dBuV -6 125*Z -7 -40*Z -8 Vcc=3V V(RF)in=50dBuV -9 RF amp conversion gain -50 * Input/output impedance = * | "50 50 u*o--I -60 0 1 2 3 4 5 6 RF amp conversion gain 1000 Supply voltage VCC (V) RF IN input frequency f (RF) in (MHz) 16 2003-12-04 TA32305FN/FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) RSSI Output Voltage Characteristics (MIX, and RF inputs) 2 RSSI Output Voltage Characteristics (MIX inputs) 2 (V) VRSSI VRSSI 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -20 VCC = 3 V f (MIX) in = 314.96 MHz f (Lo) in = 39.38 MHz AM (V) 1.8 125*Z 25*Z 1.5 RSSI output voltage RSSI output voltage -40*Z 1 VCC = 3 V f (MIX) in = 314.96 MHz f (Lo) in = 39.38 MHz AM 0.5 0 -20 0 20 40 60 80 100 120 Input level Vin (dBVEMF) MIX IN input level V (MIX) in (dBVEMF) S/N Characteristics (MIX input) in the FM Mode 10 0 -10 -40*Z 25*Z 125*Z 125*Z 10 S/N Characteristics (MIX input) in the AM Mode 0 -40*Z -10 S+N S S+N S S + N, N (dB) -20 -30 -40 25*Z -50 -40*Z -60 S + N, N (dB) VCC = 3 V f (MIX) in = 314.96 MHz Dev = 8 kHz fmod = 600 Hz 25*Z -20 125*Z -30 -40 -50 VCC = 3 V f (MIX) in = 314.96 MHz -60 AM = 90% fmod = 600 Hz -70 125*Z 125*Z 25*Z N -40*Z 60 80 100 120 N -70 -20 0 20 40 60 80 100 120 MIX IN input level V (MIX) in (dBVEMF) MIX IN input level V (MIX) in (dBVEMF) S/N Characteristics (RF input) in the FM Mode 10 S S+N 0 -10 VCC = 3 V f (RF) in = 314.96 MHz Dev = 8 kHz fmod = 600 Hz S Curve Characteristics (MIX IN) 3 Vcc=3V f(MIX)in=314.9MHz +f V(MIX)in=50dBuVemf f(Lo)in=39.38MHz V(Lo)in=100dBuV 2.5 S + N, N (dB) -20 -30 S + N, N (dB) 2 -40*Z 1.5 125*Z 25*Z 0.5 1 0 20 40 60 80 100 120 0 -70 -50 -30 -10 10 30 50 70 RF IN input level V (RF) in (dBVEMF) MIX IN input level V (MIX) in (dBVEMF) 17 2003-12-04 TA32305FN/FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) Mixer Conversion Gain - Supply Voltage Characteristics (dB) 20 15 10 5 0 -5 -10 -15 -20 -25 -30 1 2 3 4 5 6 -40*Z Mixer Conversion Gain Frequency Characteristics (dB) 25 25 125*Z f(MIX)in=314.96MHz V(MIX)in=60dBuV f(Lo)in=39.38MHz V(Lo)in=100dBuV (MIX) (MIX) Mixer conversion gain GV 20 Mixer conversion gain GV 15 25*Z Vcc=3V V(RF)in=60dBuV V(Lo)in=100dBuV 10 U/L=OPEN 0 100 1000 Supply voltage VCC (V) MIX IN input frequency f (MIX) in (MHz) Mixer Conversion Gain - Local Input Level Characteristics (dB) 25 Mixer Intercept Point 120 Mixer output level V (MIX) out (dBV) 20 15 10 5 0 -5 -10 -15 -20 60 70 80 90 100 110 120 Vcc=3V f(MIX)in=314.96MHz V(RF)in=60dBuV f(Lo)in=39.38MHz U/L=OPEN (MIX) 100 Desired ] "wave So- g 80 Mixer conversion gain GV 60 Interference wave -WS Q "g Vcc=3V Desired < S o - ] > wave f(SG1,SG2)in=314.96MHz <-WS Q > Interference wave f(SG1)in=315.06MHz f(SG2)in=315.16MHz 40 20 0 Lo input level V (Lo) in (dBV) SG input level V (MIX) in (dBV) Detuning Characteristics 5 160 0 140 120 100 80 125*Z Demodulation Output - Supply Voltage Characteristics (FM) (dB) -5 -10 -15 -20 -25 -30 -35 -40 -60 Vcc=3V f(MIX)in=314.96MHz+f V(MIX)in=50dBuV f(Lo)in=39.38MHz V(Lo)in=100dBuV Dev=8kHz fmod=600Hz (mVrms) -40*Z f(MIX)in=314.96MHz V(Lo)in=50dBuVemf Dev=8kHz fmod=600Hz f(Lo)in=39.38MHz V(Lo)in=100dBuV Attenuation level Demodulation output 25*Z 60 40 20 0 Detuning frequency (kHz) Supply voltage VCC (V) 18 2003-12-04 TA32305FN/FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) Demodulation Distortion Characteristics 0 Vcc=3V f(MIX)in=314.96MHz +f V(MIX)in=50dBuV f(Lo)in=39.38MHz V(Lo)in=100dBuV Waveform Shaping Output Duty Ratio - Supply Voltage Characteristics 60 58 56 54 (dB) -5 -10 -15 -20 -25 -30 -35 -80 Waveform shaping output duty ratio Demodulation distortion (%) 52 50 AM f(RF)in=314.96MHz V(RF)in=20dBuVemf f(Lo)in=39.38MHz V(Lo)in=100dBuV DR 48 46 44 42 40 1 2 3 Dec=4kHz FM Dev=*} 4kHz FM Dev=*} 8kHz FM Dec=8kHz -60 -40 -20 0 20 40 60 Detuning frequency (MIX IN) (kHz) Supply voltage VCC (V) Waveform Shaping Output Duty Ratio - Supply Voltage Characteristics FM mode 60 60 58 58 56 54 Waveform Shaping Output Duty Ratio - Supply Voltage Characteristics AM mode Waveform shaping output duty ratio Waveform shaping output duty ratio 56 54 -40*Z (%) 25*Z 125*Z -40*Z f(MIX)in=314.96MHz V(MIX)in=50dBuVemf Dev=8kHz fmod=600Hz f(Lo)in=39.38MHz V(Lo)in=100dBuV 50 48 46 44 42 40 1 2 (%) 52 52 50 48 46 44 42 40 1 125*Z f(MIX)in=314.96MHz V(MIX)in=50dBuVemf AM=90% (Retangle) fmod=600Hz( e OE " g ) f(Lo)in=39.38MHz V(Lo)in=100dBuV DR DR 25*Z 2 Supply voltage VCC (V) Supply voltage VCC (V) TX Output Power - Supply Voltage Characteristics 0 125*Z -15 TX Output Power Frequency Characteristics 125*Z 25*Z (dB) (dB) -20 -20 VTX1 -40 -40*Z -60 f(Lo)in=39.38MHz V(Lo)in=100dBuV VTX1 -25 -40*Z TX Output level TX Output level -30 Vcc=3V V(Lo)in=100dBuV -80 25*Z -100 -35 -40 *Input/output 50 *|"u*o--I impedance = 50 -45 0 100 200 300 400 500 600 700 800 Supply voltage VCC (V) TX output frequency f (TX)out (MHz) 19 2003-12-04 TA32305FN/FNG Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.) TX out power frequency Characteristics (dBVEMF) -10 15 125*Z -12 25*Z -14 -40*Z -16 Vcc=3V V(Lo)in=100dBuV Sensitivity Detuning Characteristics (AM and FM modulation) Vcc=3V f(Lo)in=39.38MHz V(Lo)in=100dBuV 10 U/L=OPEN fmod=600Hz 5 VTX1 (dB) 12dB SINAD sensitivity FM Dev=4kHz TX Output level -18 -5 FM Dev=4kHz FM Dev=*} 8kHz -10 AM -15 -120 -100 -80 -60 -40 -20 0 20 40 60 -20 -22 200 *output adjusted *|*o--I}b"O 250 300 350 400 450 500 TX output frequency f (TX)out (MHz) RF IN input frequency f (RF) in (MHz) 12dB SINAD sensitivity - Supply Voltage Characteristics 2 f(RF)in=314.96MHz f(Lo)in=39.38MHz V(Lo)in=100dBuV 60 RF Amp Gain + Mixer Conversion Gain - Supply Voltage Characteristics (dBVEMF) 0 -2 FM Dev=4kHz -4 -6 -8 -10 AM -12 -14 1 2 3 FM Dev=4kHz FM Dev=*} 8kHz RF Amp + Mixer conversion gain GV (dB) 50 40 12dB SINAD sensitivity 30 Vcc=3V 20 (RF)in=314.96MHz V(RF)in=50dBuV 10 50 * Input/output -- impedance = 50 *|"u*o I 0 4 5 6 1 2 3 4 5 6 Supply voltage VCC (V) Supply voltage VCC (V) 2 signal interference Characteristics (IF Filter band) 60 (dB) Interference control ratio 50 40 30 20 10 0 -10 314.6 f(RF)in = 314.96MHz V(RF)in = 5.7dBuVEMF Dev = 8kHz fmod = 600Hz f(Lo)in = 39.38MHz V(Lo)in = 100dBuV 314.7 314.8 314.9 315 315.1 315.2 315.3 Interference wave input frequency (MHz) 20 2003-12-04 TA32305FN/FNG Application Circuit (ASK) *This circuit is not guaranteed for mass product design. Please evaluate the circuit for mass product design well. For Receiver and Transceiver VCC 3300 pF C24 0.01 F 6 pF SAW C37 C35 R21 560 L3 33 nH 1000 pF C36 5 pF 22nH C33 0.01 F C34 6 pF L2 R19 1 k VCC VCC R7 100 k VCC 0.01 F C18 L1 R6 100 k R12 68 k C15 560 pF 68 k 43 k C22 27nH R13 R15 0.1 F 0.1 F C25 6 pF 1000 pF C14 C22 30 29 TX RX DATA DATA 28 RX C26 26 25 24 23 22 21 20 19 27 18 17 16 RF CHARGE RF RF TX LPF LPF AF RSSI MIX REF GND1 OUT OUT IN OUT DEC IN IN RSSI Comparator x8 Lo VCC 33 k 39.38MHz 0.1 F R3 R4 10 F C1 Q 33 pF OSC IN 1 VCC1 2 C3 MIX U/L OUT 4 3 R10 4.3 k 0.1 F IFF IN 5 R11 4.7 k IFF OUT Detector TX AM/ TX IF Vcc2 IF IN GND2 OUT QUAD Vcc3 Power FM OUT 6 7 8 9 10 11 12 13 14 15 C13 C31 1000 pF R20 560 10 F C17 120 pF R22 560 330 pF C7 C9 5 pF 3.6 k 10 pF C10 0.01 F 120 k C12 33 pF R5 X2 C8 VCC C16 1000 pF C20 C2 VCC C30* 1000 pF C32 VCC SAW: SAFCH315MAM0T00 (Murata Manufacturing) X2: TR-1 (TEW) Q: 2SC2499 (TOSHIBA) 16 2003-12-04 TA32305FN/FNG Application Circuit (FSK) *This circuit is not guaranteed for mass product design. Please evaluate the circuit for mass product design well. For Receiver only VCC C19 1000 pF C24 0.01 F 6 pF SAW C37 C35 R21 560 L3 33 nH 1000 pF R19 1 k VCC VCC 0.01 F R12 68 k R6 100 k C15 560 pF R13 68 k C18 3300 pF 0.1 F C25 6 pF 1000 pF L1 C22 27nH 0.1 F 68 k C14 R14 C22 30 29 TX RX DATA DATA 28 RX C26 26 25 24 23 22 21 20 19 27 18 17 16 RF CHARGE RF RF TX LPF LPF AF RSSI MIX REF GND1 OUT OUT IN OUT IN DEC IN RSSI Comparator x8 Lo VCC 33 k 10 F C1 0.1 F R3 OSC IN 1 33 pF VCC1 2 C3 MIX U/L OUT 4 3 R10 4.3 k 0.1 F IFF IN 5 R11 4.7 k IFF OUT Detector TX AM/ TX IF Vcc2 IF IN GND2 OUT QUAD Vcc3 Power FM OUT 6 7 8 9 10 11 12 13 14 15 C13 R18 20 k 330 pF C29 10 F 10 F C17 C28 120 pF 0.1 F C7 C9 5 pF 3.6 k 10 pF C10 0.01 F 120 k R4 C12 C20 C2 VCC C16 1000 pF C27 120 pF 33 pF R5 X2 C8 VCC VCC SAW: SAFCH315MAM0T00 (Murata Manufacturing) X2: TR-1 (TEW) Q: 2SC2499 (TOSHIBA) C30* 1000 pF C32 17 2003-12-04 TA32305FN/FNG Application Circuit (FSK) *This circuit is not guaranteed for mass product design. Please evaluate the circuit for mass product design well. For Transceiver only: Change the constants (X1 and R23) at oscillator circuit like the table below to be shifted oscillator frequency 10 kHz. VCC C19 1000 pF C24 0.01 F 6 pF SAW C37 C35 R21 560 L3 33 nH 1000 pF C36 5 pF 22nH C33 5 pF L2 R19 1 k VCC VCC VCC R13 0.01 F C18 3300 pF R6 100 k C15 560 pF 68 k 0.1 F C25 6 pF 1000 pF L1 R7 100 k R12 68 k C22 27nH 0.1 F Constant X1 R23 Transceiver 1 39.38MHz 120 k Transceiver 2 39.39MHz 150 k 68 k C14 R14 C22 30 29 TX RX DATA DATA 28 RX C26 26 25 24 23 22 21 20 19 27 18 17 16 RF CHARGE RF RF TX LPF LPF AF RSSI REF GND1 MIX OUT OUT IN OUT IN DEC IN RSSI Comparator x8 Lo VCC 10 F 33 k R3 C1 TX FM 200 k R1 R10 4.3 k R11 4.7 k Q 47 pF OSC VCC1 IN 1 2 MIX U/L OUT 4 3 0.1 F IFF IN 5 IFF OUT Detector IF TX AM/ TX Vcc2 IF IN GND2 OUT QUAD Vcc3 Power FM OUT 9 6 7 8 10 11 12 13 14 15 C13 C31 1000 pF R20 560 R18 20 k C29 10 F 10 F C17 C28 120 pF R22 560 330 pF 0.1 F C12 C7 C30* 1000 pF C32 0.01 F 0.1 F R4 X1 C9 5 pF 10 pF C10 3.6 k 120 k C20 C4 5 pF C3 47 pF R5 C5 C2 R23 C8 VCC C16 1000 pF 120 pF VCC VCC SAW: SAFCH315MAM0T00 (Murata Manufacturing) X2: TR-1 (TEW) Q: 2SC2499 (TOSHIBA) C5: 1SV325 (TOSHIBA) 18 2003-12-04 C34 VCC C27 6 pF TA32305FN/FNG Application Circuit *This circuit is not guaranteed for mass product design. Please evaluate the circuit for mass product design well. For Transceiver, one antenna version: Adjust the circuit expect antenna block. In case of Hi power output application, set the circuit like left figure. C35 16 RF IN TX OUT 15 22nH SAW 6 pF C33 0.01 F VCC VCC 0.01 F R7 100 k R12 68 k R6 100 k C15 560 pF VCC R13 68 k 3300 pF VCC C19 1000 pF C24 0.01 F 6 pF SAW C37 560 C35 L3 33 nH 1000 pF R19 1 k C18 0.1 F C25 6 pF C32 1000 pF L1 C22 27nH 0.1 F 68 k R15 43 k C14 R14 C22 VCC x8 Hi Power Output Detector IF TX AM/ TX Vcc2 IF IN GND2 OUT QUAD Vcc3 Power FM OUT 9 6 7 8 10 11 12 13 14 15 C13 C31 1000 pF R20 560 R18 20 k 330 pF C29 10 F 10 F C17 C28 6 pF 120 pF L2 22nH 0.1 F Lo VCC 10 F 33 k R3 C1 TX FM 39.38MHz 200 k R1 R11 4.7 k Q 47 pF OSC VCC1 IN 1 2 MIX U/L OUT 4 3 R10 4.3 k 0.1 F IFF IN 5 IFF OUT C36 5 pF 0.01 F 0.1 F R23 120 k R4 X1 C9 5 pF 10 pF C10 3.6 k 120 k C12 C7 C4 5 pF C20 C3 47 pF R5 C5 C2 C8 VCC C16 1000 pF 120 pF VCC VCC C33 0.01 F C34 VCC C27 19 2003-12-04 R24 300 L2 30 29 TX RX DATA DATA 28 RX C26 26 25 24 23 22 21 20 19 27 18 17 16 RF CHARGE RF RF TX LPF LPF AF RSSI REF GND1 MIX OUT OUT IN OUT IN DEC IN RSSI Comparator C30* 1000 pF R21 TA32305FN/FNG Package Dimensions SSOP30-P-300-0.65A Unit::mm Weight: 0.17 g (typ) 20 2003-12-04 TA32305FN/FNG Notice for Pb free product About solderability, following conditions were confirmed Solderability (1) Use of Sn-36Pb solder bath *E solder bath temperature = 230*Z *E dipping time = 5seconds *E the number of times = once *E use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder bath *E solder bath temperature = 245*Z *E dipping time = 5seconds *E the number of times = once *E use of R-type flux RESTRICTIONS ON PRODUCT USE 000707EBA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 21 2003-12-04 |
Price & Availability of TA32305FNG
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