 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUD70N03-04P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0043 @ VGS = 10 V 0.0065 @ VGS = 4.5 V ID (A)a 33 27 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D D DC/DC Converters D Synchronous Rectifiers TO-252 Drain Connected to Tab G D S G Top View Ordering Information: SUD70N03-04P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TA = 25_C TC = 25_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 33 70b 100 8.3a 88 8.3a -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package. Document Number: 72237 S-40841--Rev. B, 03-May-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.2 Maximum 18 50 1.5 Unit _C/W C/W 1 SUD70N03-04P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 0.0051 50 0.0035 0.0043 0.007 0.0065 S W 30 1.0 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 15 V, VGS = 10 V, ID = 50 A f = 1 MHz 0.5 VGS = 0 V, VDS = 25 V, f = 1 MHz 5100 860 430 1.0 90 18 16 12 12 40 10 20 20 60 15 ns 1.5 135 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 40 100 1.5 80 A V ns Notes a. Guaranteed by design, not subject to production testing. a. Pulse test; pulse width v 300 ms, duty cycle v 2%. a. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 5 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 Transfer Characteristics 150 4V 120 100 TC = 125_C 50 25_C -55_C 0 80 40 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72237 S-40841--Rev. B, 03-May-04 2 SUD70N03-04P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 180 TC = -55_C GFS - Transconductance (S) 25_C 120 125_C 90 60 30 0 0 20 40 60 80 100 RDS(on) - On-Resistance (W) 150 0.008 0.010 On-Resistance vs. Drain Current 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 0.000 0 20 40 60 80 100 ID - Drain Current (A) 8000 ID - Drain Current (A) 10 Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 6000 8 VDS = 15 V ID = 50 A 6 Ciss 4000 4 2000 Crss 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Coss 2 0 0 20 40 60 80 100 Qg - Total Gate Charge (nC) 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature 100 Source-Drain Diode Forward Voltage VGS = 10 V ID = 20 A I S - Source Current (A) TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72237 S-40841--Rev. B, 03-May-04 www.vishay.com 3 SUD70N03-04P Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Ambient Temperature 40 1000 Limited by rDS(on) Safe Operating Area 32 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 1 ms 10 ms 24 10 16 1 100 ms 1s 10 s 100 s DC 8 0.1 Single Pulse TA = 25_C 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72237 S-40841--Rev. B, 03-May-04 |
Price & Availability of SUD70N03-04P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |