View SUD50N03-07-E3_1319761.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SUD50N03-07
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
20 16
rDS(on) (W)
0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
TO-252
D
Drain Connected to Tab G D S
G
Top View Ordering Information: SUD50N03-07 SUD50N03-07--E3 ( Lead Free) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TA = 25_C TA = 100_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
30 "20 20 14 100 20 136 5a -55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70767 S-40272--Rev. E, 23-Feb-04 www.vishay.com
Symbol
RthJA RthJC
Typical
Maximum
30
Unit
_C/W
0.85
1.1
1
SUD50N03-07
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID =20 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VGS = 10 V, ID =20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 50 0.007 0.011 0.010 S W 30 1.0 2.0 3.0 "100 1 50 V nA mA A
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamica
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 0.5 14 11 60 15 VDS = 15 V, VGS = 10 V, ID = 50 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 5600 1100 450 70 16 10 3.1 30 20 120 40 ns W 130 nC pF
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 55 100 1.5 100 A V ns
Source-Drain Reverse Recovery Time
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature.
www.vishay.com
2
Document Number: 70767 S-40272--Rev. E, 23-Feb-04
SUD50N03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10, 9, 8, 7, 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 80 100
Transfer Characteristics
150 5V 100 4V 50 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V)
60
40
TC = 125_C 25_C -55_C
20
0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V)
Transconductance
120 TC = -55_C 90 r DS(on)- On-Resistance ( W ) 0.0125 0.0100 0.0075 0.0050 0.0025 0.0000 0 10 20 30 40 50 0 g fs - Transconductance (S) 0.0150
On-Resistance vs. Drain Current
25_C 125_C
VGS = 4.5 V
60
VGS = 10 V
30
0
20
40
60
80
100
ID - Drain Current (A) 8000
ID - Drain Current (A) 20 Ciss VDS = 15 V ID = 45 A
Capacitance
Gate Charge
V GS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
6000
16
12
4000
8
2000 Crss 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V)
4
0 0 30 60 90 120 Qg - Total Gate Charge (nC)
Document Number: 70767 S-40272--Rev. E, 23-Feb-04
www.vishay.com
3
SUD50N03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.5
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 45 A I S - Source Current (A)
100
Source-Drain Diode Forward Voltage
2.0 rDS(on) - On-Resiistance (Normalized)
1.5
TJ = 150_C TJ = 25_C
1.0
0.5
0.0 -50
-25
0
25
50
75
100
125
150
1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs. Ambiemt Temperature
24 20 I D - Drain Current (A) 16 12 8 4 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) I D - Drain Current (A)
500
Safe Operating Area
100 Limited by rDS(on) 10
10, 100 ms 1 ms 10 ms 100 ms
1
1s TA = 25_C Single Pulse dc
0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2
0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1
1
10
100
500
Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70767 S-40272--Rev. E, 23-Feb-04
4

▲Up To Search▲

Price & Availability of SUD50N03-07-E3

	To Download SUD50N03-07-E3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .