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| SUD50N02-12P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.012 @ VGS = 10 V 0.026 @ VGS = 4.5 V ID (A)a 40c 27c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N02-12P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TC = 25_C TC= 100_C ID IDM IS PD PD TJ, Tstg Symbol VDS VGS Limit 20 "20 40c 28c 90 4 33.3 6a - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Based on maximum allowable Junction Temperature. Package limitation current is 30 A. Document Number: 72095 S-31269--Rev. B, 16-Jun-03 www.vishay.com t v 10 sec Steady State RthJA RthJC Symbol Typical 20 40 3.7 Maximum 25 50 4.5 Unit _C/W C/W 1 SUD50N02-12P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A 10 0.021 50 0.0095 0.012 0.0143 0.026 S W 20 0.8 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 10 V, f = 1 MHz 1000 370 180 3.0 7.5 3.5 2.6 11 10 24 9 20 15 35 15 ns 12 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.1 20 100 1.5 40 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 90 6V 75 I D - Drain Current (A) VGS = 10 thru 7 V I D - Drain Current (A) 75 25_C 60 125_C 90 TC = - 55_C Transfer Characteristics 60 5V 45 45 30 4V 30 15 3V 0 0 2 4 6 8 10 15 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72095 S-31269--Rev. B, 16-Jun-03 2 SUD50N02-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 50 0.040 0.035 g fs - Transconductance (S) 40 r DS(on)- On-Resistance ( W ) TC = - 55_C 0.030 0.025 0.020 0.015 0.010 0.005 0 0 10 20 30 40 50 0.000 0 15 30 45 60 75 90 VGS = 10 V On-Resistance vs. Drain Current VGS = 4.5 V 30 25_C 125_C 20 10 ID - Drain Current (A) ID - Drain Current (A) Capacitance 1500 10 Gate Charge 1200 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) Ciss 8 VDS = 10 V ID = 50 A 900 6 600 Coss 300 Crss 4 2 0 0 4 8 12 16 20 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 TJ = 150_C 10 TJ = 25_C 1.2 1.0 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Document Number: 72095 S-31269--Rev. B, 16-Jun-03 www.vishay.com 3 SUD50N02-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 20 1000 Limited by rDS(on) 16 I D - Drain Current (A) I D - Drain Current (A) 100 10, 100 ms 1 ms 10 ms 100 ms 1s 10 s 100 s dc Safe Operating Area 12 10 8 1 4 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72095 S-31269--Rev. B, 16-Jun-03 |
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