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| STTH200L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) up to 2 x 120 A 400 V 150 C 0.83 V 50 ns A1 A2 K1 K2 K1 A1 K2 A2 ISOTOP STTH200L04TV1 Features and benefits Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Package insulation voltage: 2500 VRMS Description The STTH200L04TV1 uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 1. Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 90 C = 0.5 Tc = 73 C = 0.5 tp = 10 ms sinusoidal Per diode Per diode Order codes Part number STTH200L04TV1 Marking STTH200L04TV1 Absolute ratings (limiting values, per diode) Parameter Value 400 200 100 A 120 900 -55 to + 150 150 A C C Unit V A August 2006 Rev 1 1/7 www.st.com 7 Characteristics STTH200L04TV1 1 Characteristics Table 2. Symbol Rth(j-c) Rth(c) Junction to case Total Coupling 0.30 0.10 C/W Thermal resistance Parameter Per diode Value (max). 0.50 Unit When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 3. Symbol IR(1) VF(2) Static electrical characteristics (per diode) Parameter Reverse leakage current Forward voltage drop Test conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 150 C VR = VRRM Min. Typ Max. 100 A 100 1000 1.2 IF = 100 A V 0.83 1.0 Unit 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.0033 IF2(RMS) Table 4. Symbol Dynamic characteristics (per diode) Parameter Test conditions IF = 1 A dIF/dt = 50 A/s VR = 30 V IF = 1 A dIF/dt = 200 A/s VR = 30 V VR = 200 V IF = 100 A dIF/dt = 100 A/s VR = 200 V IF = 100 A dIF/dt = 100 A/s IF = 100 A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 100 A dIF/dt = 200 A/s VFR = 1.1 x VFmax 2.6 0.4 800 ns V Min Typ Max Unit 75 45 100 ns 60 18 A trr Reverse recovery time Tj = 25 C IRM Sfactor tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage Tj = 125 C Tj = 125 C Tj = 25 C Tj = 25 C 2/7 STTH200L04TV1 Characteristics Figure 1. P(W) 180 160 140 120 100 Conduction losses versus Figure 2. average forward current (per diode) 200 =0.5 =0.2 =0.1 =0.05 =1 Forward voltage drop versus forward current (per diode) I FM (A) 180 160 140 120 100 Tj=150C (Maximum values) 80 80 60 40 20 0 0 10 20 30 40 50 60 T Tj=150C (Typical values) 60 40 Tj=25C (Maximum values) I F(AV) (A) 70 80 =tp/T tp 20 0 0.0 VFM (V) 0.2 0.4 0.6 0.8 1.0 90 100 110 120 130 140 150 1.2 1.4 Figure 3. Relative variation of thermal Figure 4. impedance junction to case versus pulse duration 50 45 40 35 30 25 20 15 10 Peak reverse recovery current versus dIF/dt (typical values, per diode) Zth(j-c) /Rth( j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 Single pulse IRM (A) IF=IF(AV) VR=200V Tj=125C t P (s) 1.E-02 1.E-01 1.E+00 1.E+01 5 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 Figure 5. t rr (ns) 300 Reverse recovery time versus dIF/dt (typical values, per diode) Figure 6. Q rr (nC) 3500 Reverse recovery charges versus dIF/dt (typical values, per diode) 250 IF=IF(AV) VR=200V Tj=125C 3000 2500 2000 IF=IF(AV) VR=200V Tj=125C 200 150 1500 100 1000 50 500 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 3/7 Characteristics STTH200L04TV1 Figure 7. Reverse recovery softness factor versus dIF/dt (typical values, per diode) IF < 2 x IF(AV) VR=200V Tj=125C Figure 8. Relative variations of dynamic parameters versus junction temperature 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 S FACTOR 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IRM QRR IF=IF(AV) VR=200V Reference: Tj=125C tRR SFACTOR dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 Tj (C) 50 75 0.0 25 100 125 Figure 9. Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) t fr (ns) 1800 1600 1400 1200 1000 800 600 400 IF=IF(AV) VFR=1.1 x VF max. Tj=125C 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VFP (V) IF=IF(AV) Tj=125C dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 200 0 0 50 100 150 dIF /dt(A/s) 200 250 300 350 400 450 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 10000 F=1MHz VOSC=30mVRMS Tj=25C 1000 VR(V) 100 1 10 100 1000 4/7 STTH200L04TV1 Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) ISOTOP Dimensions Dimensions Ref. Millimeters Min. E G2 Table 5. Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 A C 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 A A1 C2 E2 B C C2 F1 F D D1 E P1 E1 G D1 D S E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 OP G1 E1 F F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH200L04TV1 3 Ordering information Ordering type Marking Package Weight Base qty Delivery mode Tube STTH200L04TV1 STTH200L04TV1 ISOTOP 27 g 10 (without screws) (with screws) 4 Revision history Date 11-Aug-2006 Revision 1 First issue Description of Changes 6/7 STTH200L04TV1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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