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| (R) STTH2003CT/CG/CF/CR/CFP HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2 x 10 A 300 V 175 C 1V 35 ns K A1 K A2 A2 D2PAK STTH2003CG A1 FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY INSULATED PACKAGES: ISOWATT220AB, TO-220FPAB Electric insulation: 2000VDC Capacitance: 12pF s s s A2 A2 A1 K I2PAK STTH2003CR A1 K TO-220AB STTH2003CT DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB, I2PAK or D2PAK, this device is especially intended for secondary rectification. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 TO-220AB / D2PAK / I2PAK ISOWATT220AB TO-220FPAB IFSM IRSM Tstg Tj Surge non repetitive forward current Non repetitive avalanche current Storage temperature range Maximum operating junction temperature A2 A1 K A2 K A1 ISOWATT220AB STTH2003CF TO-220FPAB STTH2003CFP Value 300 30 Tc=140C Tc=125C Tc=115C tp = 10 ms sinusoidal tp = 20 s square 110 5 -65 + 175 175 Per diode Per device 10 20 Unit V A A A A C C 1/8 August 2003 - Ed: 7D STTH2003CT/CG/CF/CR/CFP THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK / I PAK ISOWATT220AB TO-220FPAB Rth (c) TO-220AB / D2PAK / I2PAK ISOWATT220AB TO-220FPAB 2 2 Value Per diode Total Per diode Total Per diode Total Coupling Coupling Coupling 2.5 1.3 3.9 3.2 4.6 4 0.1 2.5 3.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 300 V Tj = 25C Tj = 125C IF = 10 A Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.025 IF2(RMS) 0.85 30 Min. Typ. Max. 20 300 1.25 1 V Unit A VF** RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM Tests conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1 A VR = 30 V Tj = 25C Tj = 125C 0.3 8 Tj = 25C Min. Typ. Max. 25 35 230 3.5 ns V A Unit ns IF = 10 A dIF/dt = 100 A/s VFR = 1.1 x VF max. Vcc = 200V dIF/dt = 200 A/s IF = 10 A 2/8 STTH2003CT/CG/CF/CR/CFP Fig. 1: Conduction losses versus average current (per diode). P1(W) 14 12 10 8 6 4 2 0 0 2 4 IF(av) (A) 6 8 =tp/T T Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) = 0.05 = 0.1 = 0.2 = 0.5 200 100 Tj=125C =1 Tj=25C 10 Tj=75C tp 10 12 VFM(V) 1 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / D2PAK / I2PAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB). Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 0.4 T = 0.2 = 0.1 = 0.2 = 0.1 Single pulse T Single pulse 0.2 tp(s) 1E-2 1E-1 =tp/T tp tp(s) =tp/T tp 1E+0 0.0 1E-2 1E-1 1E+0 1E+1 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 16 14 12 10 8 IF=0.5*IF(av) VR=200V Tj=125C IF=IF(av) IF=2*IF(av) Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) 100 80 IF=IF(av) VR=200V Tj=125C 60 IF=2*IF(av) 6 4 2 0 0 50 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 40 20 0 0 50 IF=0.5*IF(av) dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 3/8 STTH2003CT/CG/CF/CR/CFP Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor 0.60 0.50 0.40 0.30 0.20 0.10 dIF/dt(A/s) VR=200V Tj=125C Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125C). 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 S factor IRM Tj(C) 50 75 100 125 0.00 0 50 100 150 200 250 300 350 400 450 500 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode) (TO-220AB). VFP(V) 10 8 6 4 2 IF=IF(av) Tj=125C Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) 500 400 300 200 100 VFR=1.1*VF max. IF=IF(av) Tj=125C dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m) (D2PAK). Rth(j-a) (C/W) 80 70 60 50 40 30 20 10 0 S(Cu) (cm) 0 5 10 15 20 25 30 35 40 4/8 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 D L L3 A1 B2 B G A2 C R A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 M * V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT DIMENSIONS (in millimeters) D2PAK 16.90 10.30 1.30 5.08 3.70 8.90 5/8 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 6/8 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA TO-220FPAB REF. Min. A H B DIMENSIONS Millimeters Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4 30.6 10.6 3.6 16.4 9.30 3.20 Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 1.126 0.386 0.114 0.626 0.354 0.118 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409 1.205 0.417 0.142 0.646 0.366 0.126 A B D E F F1 L7 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 2.9 15.9 9.00 3.00 Dia L6 L2 L3 L5 D F1 L4 F2 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. 16 Typ. 0.63 Typ. F G1 G E 7/8 STTH2003CT/CG/CF/CR/CFP PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 D L1 b2 L b1 b e A1 A A1 b b1 b2 c c2 D e E L L1 L2 c Ordering code STTH2003CT STTH2003CG STTH2003CG-TR STTH2003CF STTH2003CFP STTH2003CR s Marking STTH2003CT STTH2003CG STTH2003CG STTH2003CF STTH2003CFP STTH2003CR Package TO-220AB D PAK D2PAK ISOWATT220AB TO-220FPAB I PAK 2 2 Weight 2.2 g 1.48 g 1.48 g 2.08 g 2.08 g 1.49 g Base qty 50 50 500 50 50 50 Delivery mode Tube Tube Tape & reel Tube Tube Tube s s s Cooling method: by conduction (C) Recommended torque value: 0.55 N.m. Maximum torque value: 0.70 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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