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STTH20002TV
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (typ) trr (typ) FEATURES AND BENEFITS

Up to 2 x 120 A 200 V 150C 0.75 V 41 ns
K2
A1 A2
K1 K2
K1 A1
A2
Suited for SMPS Very Low Forward Losses Low recovery time High surge current capability Insulated: Insulating voltage=2500VRMS Capacitance = 55pF
ISOTOP STTH20002TV1
DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications.
ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) IF(AV) IFSM Tstg Tj RMS forward voltage Average forward current = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 95C Per diode Tc = 80C Per diode tp = 10ms sinusoidal Value 200 170 100 120 1000 -55 to + 150 150 Unit V A A A C C
Order Codes Part Number STTH20002TV1
Marking STTH20002TV1
July 2004
REV. 2
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THERMAL RESISTANCE Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Maximum 0.52 0.31 0.1 C/W Unit C/W
When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Test conditions VR = VRRM 80 IF = 100A IF = 200A Tj = 150C IF = 100A IF = 200A
Pulse test: ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.002 I F (RMS) * tp = 5 ms, < 2%
Min.
Typ
Max. 100 800 1.05 1.20
Unit A
Reverse leakage current Tj = 25C Tj = 125C Forward voltage drop Tj = 25C
V
0.75
0.85 1.05
2
DYNAMIC CHARACTERISTICS (per diode) Symbol trr IRM tfr VFP Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Test conditions IF = 1A dIF/dt = 200 A/s VR =30V Min. Typ Max. Unit 41 11.5 50 15 800 2.5 ns A ns V
Tj = 125C IF = 100A VR = 160V dIF/dt = 200 A/s Tj = 25C Tj = 25C IF = 100A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 100A dIF/dt = 200 A/s
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Fig. 1: Peak current versus duty cycle (per diode).
IM(A)
600 200 500 180
Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode).
IFM(A)
T
160
P = 80W
400
=tp/T
P = 120W
tp
140
Tj=150C
120 300 100
Tj=25C
P = 160W
200
80 60 40
100
20
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VFM(V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
200 180 160 140
Tj=150C
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
120 100
Tj=25C
80 60 40 20 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Single pulse
VFM(V)
0.1 1.E-03 1.E-02
tp(s)
1.E-01 1.E+00 1.E+01
Fig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF)
10000
F=1MHz VOSC=30mVRMS Tj=25C
Fig. 5: Reverse recovery charges versus dIF/dt (typical values, per diode).
Qrr(nC)
1000 900 800 700 600
Tj=125C IF=100A VR=160V
1000
500 400
Tj=25C
300 200
VR(V)
100 1 10 100 1000
100 0 10
dIF/dt(A/s)
100 1000
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Fig. 6: Reserve recovery time versus dIF/dt (typical values, per diode).
trr(ns)
120
IF=100A VR=160V
Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode).
IRM(A)
25
IF=100A VR=160V
100
Tj=125C
20
80 15
Tj=125C Tj=25C
60
10 40 5
Tj=25C
20
dIF/dt(A/s)
0 10 100 1000 0 10
dIF/dt(A/s)
100 1000
Fig. 8: Dynamic parameters versus junction temperature.
QRR; IRM [Tj] / QRR; IRM [Tj=125C]
1.4
IF=100A VR=160V
1.2 1.0
IRM
0.8
QRR
0.6 0.4 0.2 0.0 25 50 75
Tj(C)
100 125 150
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PACKAGE MECHANICAL DATA ISOTOP REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 typ. 0.976 typ. 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193
A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S ORDERING INFORMATION Ordering type STTH20002TV1

Marking STTH20002TV1
Package ISOTOP
Weight 27 g (without screws)
Base qty 10 (with screws)
Delivery mode Tube
Epoxy meets UL94, V0 Cooling method: by conduction (C)
REVISION HISTORY Table 1: Revision history Date 26-May-2004 13-Jul-2004 Revision 1 2 Description of Changes First issue Figure 6 legend corrected: "Forward" changed to "Reverse"
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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