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SemiWell Semiconductor Sensitive Gate Triacs
STP4A60S
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt Sensitive Gate Triggering 4 Mode Non-isolated Type

2.T2

3.Gate
1.T1
General Description
This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.
TO-220
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC =107 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 4.0 30/33 4.5 1.5 0.1 1.0 7.0 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Units
V A A A2 s W W A V C C
Aug, 2003. Rev. 3
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5
STP4A60S
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Gate Trigger Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 0.2 5 1.6 1.4 2.0 10 3.0 V VD = 6 V, RL=10 8 5 12 1.4 1.4 V
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 6 A, Inst. Measurement
Ratings Min.

Typ.

Max.
1.0 1.6 5 5
Unit
IDRM VTM I+GT1 I -GT1
mA V
mA
V/
mA C/W
2/5
STP4A60S
Fig 1. Gate Characteristics
10
10
1
Fig 2. On-State Voltage
2
VGM (7V) PGM (1.5W)
On-State Current [A]
Gate Voltage [V]
10
1
PG(AV) (0.1W) IGM (1A)
10
0
125 C
o
25 I+GT1 I -GT1 I -GT3
25 I+GT3
10
0
25 C
o
VGD(0.2V)
10
-1
10
0
10
1
10
2
10
3
10
-1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
5.5
Fig 4. On State Current vs. Allowable Case Temperature
= 180 o = 150 o = 120 o = 90
o o o
Power Dissipation [W]
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5

360
2

Allowable Case Temperature [ oC]
6.0
130 125 120 115 110
o
: Conduction Angle
= 60 = 30

2
105
360
= 30o = 60 o = 90 o = 120 o = 150 o = 180
100 95 0.0
: Conduction Angle
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
35
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
3
30
Surge On-State Current [A]
25
X 100 (%)
60Hz
V
20
V GT1
10
2
+ GT1 -
V GT3
VGT (t C)
15
10
o
50Hz
VGT (25 C)
o
5
1
V
+ GT3
0 0 10
10
10
1
10
2
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
STP4A60S
Fig 7. Gate Trigger Current vs. Junction Temperature
10
3
Fig 8. Transient Thermal Impedance
10
I
10
2
+ GT1 GT1 GT3
I I
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
X 100 (%)
o
1
I
10
1
+ GT3
-50
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
10

6V

A

A
6V
6V
A

RG
6V
A
V
RG
V
RG
V
V
RG
Test Procedure
Test Procedure
Test Procedure
Test Procedure
4/5
STP4A60S
TO-220 Package Dimension
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
mm Typ.
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Inch Typ.
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
5/5

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