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| STP200NF03 STB200NF03 - STB200NF03-1 N-channel 30V - 0.0032 - 120A - D2PAK/I2PAK/TO-220 STripFETTM III Power MOSFET General features Type STP200NF03 STB200NF03 STB200NF03-1 VDSS 30V 30V 30V RDS(on) <0.0037 <0.0037 <0.0037 ID 120A(1) 120A(1) 120A(1) TO-220 1 2 3 3 1 D2PAK 1. Current Limited by Package Standard threshold drive 100% avalanche tested I2PAK 3 12 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications Switching application Order codes Part number STB200NF03T4 STB200NF03-1 STP200NF03 Marking B200NF03 B200NF03 P200NF03 Package D I 2PAK 2PAK Packaging Tape & reel Tube Tube TO-220 February 2007 Rev 4 1/18 www.st.com 18 Contents STP200NF03 - STB200NF03 - STB200NF03-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 7 Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STP200NF03 - STB200NF03 - STB200NF03-1 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID(1) ID(1) IDM(2) Ptot dv/dt(3) EAS (4) Tstg Tj Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Max. operating junction temperature -55 to 175 C Value 30 30 20 120 120 480 300 2.0 1.5 1.45 Unit V V V A A A W W/C V/ns J 1. Value limited by package 2. Pulse width limited by safe operating area. 3. ISD 120A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj = 25 C, ID = 60A, VDD = 25V Table 2. Rthj-case Rthj-amb Rthj-pcb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb Maximum lead temperature for soldering purpose(1) 0.5 62.5 see curve 13 and 14 300 C C/W C/W 1. for 10 sec. 1.6mm from case 3/18 Electrical characteristics STP200NF03 - STB200NF03 - STB200NF03-1 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 60A 2 0.0032 Min. 30 1 10 100 4 0.0036 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 4. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS= 15V , ID = 60A Min. Typ. 200 4950 1750 280 30 195 75 60 113 32 41 140 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VDD = 15V, ID = 60A RG = 4.7 VGS = 10V (see Figure 19) VDD = 24V, ID = 120A, VGS = 10V (see Figure 20) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 4/18 STP200NF03 - STB200NF03 - STB200NF03-1 Electrical characteristics Table 5. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 120A, VGS = 0 70 170 5 Test conditions Min. Typ. Max. 120 480 1.3 Unit A A V ns nC A ISD = 120A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 25V, Tj = 150C Reverse recovery current (see Figure 21) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 5/18 Electrical characteristics STP200NF03 - STB200NF03 - STB200NF03-1 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/18 STP200NF03 - STB200NF03 - STB200NF03-1 Figure 7. Gate charge vs. gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs. temperature Figure 10. Normalized on resistance vs. temperature Figure 11. Normalized BVDSS vs. temperature Figure 12. Source-drain diode forward characteristics 7/18 Electrical characteristics Figure 13. Thermal resistance rthj-a vs. PCB copper area STP200NF03 - STB200NF03 - STB200NF03-1 Figure 14. Max power dissipation vs. PCB copper area Figure 15. Power Derating vs. Tc Figure 16. Max Id Current vs. Tc Figure 17. Allowable Iav vs. Time in Avalanche 8/18 STP200NF03 - STB200NF03 - STB200NF03-1 Electrical characteristics The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To de rate above 25 oC, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV. 9/18 Spice thermal model STP200NF03 - STB200NF03 - STB200NF03-1 3 Spice thermal model Table 6. Spice parameters Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 Node 5-4 4-3 3-2 2-1 Value 0.011 0.0012 0.05 0.1 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5-4 4-3 3-2 2-1 0.09 0.02 0.11 0.17 Figure 18. Circuit 10/18 STP200NF03 - STB200NF03 - STB200NF03-1 Test circuit 4 Test circuit Figure 20. Gate charge test circuit Figure 19. Switching times test circuit for resistive load Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 11/18 Package mechanical data STP200NF03 - STB200NF03 - STB200NF03-1 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 12/18 STP200NF03 - STB200NF03 - STB200NF03-1 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/18 Package mechanical data STP200NF03 - STB200NF03 - STB200NF03-1 TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 14/18 STP200NF03 - STB200NF03 - STB200NF03-1 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 15/18 Packaging mechanical data STP200NF03 - STB200NF03 - STB200NF03-1 6 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 16/18 STP200NF03 - STB200NF03 - STB200NF03-1 Revision history 7 Revision history Table 7. Date 09-Sep-2004 09-Aug-2006 Revision history Revision 2 3 Complete version New template, no content change Changes 17/18 STP200NF03 - STB200NF03 - STB200NF03-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. 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