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STM915-16
RF POWER MODULE GSM MOBILE APPLICATIONS
s s s s s s
LINEAR POWER AMPLIFIER 890-915 MHz 12.5 VOLTS INPUT/OUTPUT 50 OHMS POUT = 16 W MIN. GAIN = 42 dB MIN.
DESCRIPTION The STM915-16 is a linear power module designed for 12.5 V applications in GSM Cellular Radio Systems. The STM915-16 uses gold metallized transistors with diffused emitter ballast resistors for high linearity Class AB operation.
CASE H100 ORDER CODE STM915-16 BRANDING STM915-16
PIN CONNECTION
1 RF Input 2 8.0 Vdc 3 12.5 Vdc
4 8.0 Vdc 5 12.5 Vdc 6 RF Output
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol V S2, V S4 V S1, V S3 PI N P OUT TC
1
Parameter DC Supply Voltage DC Supply Voltage RF Input Power RF Output Power Storage T emperature Operating Case Temperature (P OUT 17 W) (VS2 ,VS4 = 12.5 V) (RF applied/No RF applied)
Value 15.6/30.0 8.5 4.5 3.0 20 - 30 to + 100 - 30 to + 100
Un it Vdc Vdc Vdc mW W
o o
V CONTROL DC Control Voltage
T STG
C C
Note1: Pulse Width = 577 sec. Repetition rate = 4.6 msec.
June 1999
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ELECTRICAL SPECIFICATIONS (Tcase = 25C, VS1 , VS3 = 8.0 Vdc; VS2, VS4 = 12.5 Vdc)
Symb ol Parameter T est Con dition s Min. BW P OUT I Q1 I Q2 I Q3 Frequency Range Output Power Efficiency
1, 2 1,2
Value Typ . Max. 915
Unit
890 V CONT = 4.0 Vdc P OUT = 16 W V CONT = 0 Vdc V CONT = 0 Vdc V CONT = 0 Vdc V CONT = 0 to 4.0V V CONT = 0 Vdc V S2,
S4
MHz W
P IN = 1 mW PI N = 1 mW PI N = 1 mW PI N = 1 mW
16 35 41 0.5 140 200 56 2.0 150 250
% mA mA mA dB -14 -45 2.0:1 dBm dBc
Leakage Current, V S1 , VS2 Bias Current, V S3 Quiescent Current, V S4 Control Dynamic 3 Range Isolation
= 0 to 15.6V
H
Harmonics
1, 2 1,2
P OUT = 42 dBm reference P OUT = +13 dBm to +42 dBm 0 1.0 P OUT = +13 to +42 dBm 30 KHz Bandwidth, 20 MHz above f0 P OUT = +13 dBm to +42 dBm CW P OUT = - 14 to +42 dBm V S2 , V S4 = 10.8 to 15.6 V Load VSWR = 6:1 Source VSW R = 3:1 All phase angles TC = - 20 to +60 C VSW R = 10:1 All phase angles P OUT = 16 W V = 15.6Vdc -70
VSWR I N Input VSW R V CONT I CONT Tr
Control Voltage Control Current Rise Time Noise Power Stability
1, 2 1, 2, 4
4.0 2.0 1.0 -65
Vdc mA Sec dBm
All Spurious outputs more than 60dB below carrier No Degradation in Output Power
REF. 1014655E
Load Mismatch 1,2
Notes: 1) PIN = 1.0mW adjust VCONTROL for specified POUT . 2) Pulse Width = 577 sec. Repetition rate = 4.6 msec.
3) POUT (Reference) = 42 dBm 4)Tr measured at 1% to 81% of POUT in watts
GSM SPECIFIC TESTS
Symbol Parameter T est Co nditions Min. AM/AM Conversion G ain PI N = fo (0 dBm)+[fo + 200 kHz (- 40 dBm)] VCONTROL adjusted for POUT = 13, 30, 42 dBm POUT (f o + 200 kHz) POUT (f o - 200 kHz) AM/PM Conversion POUT = +13 to + 42 dBm PI N varied +/- .5 dB - 40 - 45 4 dBc dBc /dB Value T yp. Max. Unit
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MODULE DC AND TEST FIXTURE CONFIGURATION
REF. 1015959E
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TYPICAL PERFORMANCE Output Power vs Frequency Control Voltage, Efficiency & Input VSWR vs Frequency
Control Voltage vs Case Temperature
Output Power vs Case Temperature
Output Power vs Control Voltage
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APPLICATIONS RECOMMENDATIONS OPERATION LIMITS The STM915-16 power module should never be operated under any condition which exceeds the Absolute Maximum Ratings presented on this data sheet. Nor should the module be operated continuously at any of the specified maximum ratings. If the module is to be operated under any condition such that it may be subjected to one or more of the maximum rating conditions, care must be taken to monitor other parameters which may be affected. For example, a combination of high VS3 and input overdrive could result in exceeding the maximum output power rating; in this condition, the output power must be maintained below the maximum rating by use of the gain control pin. GAIN CONTROL The module output power should be limited to 20 watts (43 dBm). The module is designed to be operated with VS1 and VS3 set to 8.0 Vdc, VS2 and VS4 set to 12.5 Vdc and input power set to 1.0 mW (0 dBm). Module gain is adjusted by varying VCONTROL. DECOUPLING The bypassing internal to the module is sufficient for the frequency range 90-1300 MHz. Care should be taken to insure proper decoupling for each application as the module is capable of a wide range of operating characteristics including "linear" operation, in which an important design criteria is the use of appropriate bypassing. For bypassing low frequencies while maintaining the electrical specifications contained in this data sheet, use of the decoupling network shown in the "Module DC and Test Fixture Configuration" diagram herein is recommended. MODULE MOUNTING To insure adequate thermal transfer from the module to the heatsink, it is recommended that a satisfactory thermal compound such as Dow Corning 340, Wakefield 120-2 or equivalent be applied between the module flange and the heatsink. The heatsink mounting surface under the module should be flat to within 0.05 mm ( 0.002 inch). The module should be mounted to the heatsink using 3 mm (or 4-40) or equivalent screws torqued to 5-6 kg-cm (4-6 in-lb). The module leads are attached to the equipment PC board using 180C solder applied to the leads with it properly grounded soldering iron trip, not to exceed 195C, applied a minimum of 2 mm (0.080 inch) from the body of the module for a duration not to exceed 15 seconds per lead. It is imperative that no other portion of the module, other than the leads, be subjected to temperatures in excess of 100C (maximum storage temperature), for any period of time, as the plastic moulded cover, internal components and sealing adhesives may be adversely affected by such conditions. Due to the construction techniques and the materials used within the module, reflow soldering of the flange heatsink or leads, is not recommended. THERMAL CONSIDERATIONS It will be necessary to provide a suitable heatsink in order to maintain the module flange temperature at or below the maximum case operating temperature. In a case where the module output power will be limited to +42 dBm (16 W) and designing for the worst case efficiency of 35%, the power dissipated by the module will be 29.7 watts. The heatsink must be designed such that the thermal rise will be less than the difference between the maximum ambient temperature at which the module will operate and the maximum operating case temperature of the module while dissipating 29.7 watts.
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H100 MECHANICAL DATA
DIM. A B C D E F G H J K L M N P Q R S V W mm MIN. 60.45 50.04 11.31 6.35 2.16 3.35 0.13 57.40 51.87 39.17 34.09 29.01 16.31 8.69 0.38 3.05 13.59 4.49 6.78 0.64 3.30 14.09 5.51 7.06 0.015 0.120 0.535 0.177 0.267 0.38 0.005 2.260 2.042 1.542 1.342 1.142 0.642 0.342 0.025 0.130 0.555 0.217 0.278 TYP. MAX. 60.83 50.54 11.81 6.73 2.54 MIN. 2.380 1.970 0.445 0.250 0.085 0.132 0.015 inch TYP. MAX. 2.395 1.990 0.465 0.265 0.100
1013762F
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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