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| STH6N100 STH6N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH6N100 STH6N100FI s s s s s s s V DSS 1000 V 1000 V R DS( on) <2 <2 ID 6A 3.7 A TYPICAL RDS(on) = 1.75 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 1 TO-218 ISOWATT218 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STH6N100 VD S V DG R V GS ID ID ID M(*) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STH6N100 1000 1000 20 6 3.7 24 180 1.44 -65 to 150 150 3.7 2.3 24 70 0.56 4000 Unit V V V A A A W W/o C V o o C C (*) Pulse width limited by safe operating area December 1996 1/10 STH6N100/FI THERMAL DATA TO-218 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 0.69 30 0.1 300 ISOWATT218 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) o Max Value 6 850 16 3.7 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. 1000 25 250 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 20 V T c = 125 oC ON () Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 A ID = 3 A 6 Min. 2 Typ. 3 1.75 Max. 4 2 Unit V A V DS > ID( on) x RD S(on) max V GS = 10 V DYNAMIC Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 3 A VG S = 0 Min. 4 Typ. 5.5 2150 260 105 2800 330 130 Max. Unit S pF pF pF 2/10 STH6N100/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 500 V I D = 3 A V GS = 10 V R G = 50 (see test circuit, figure 3) V DD = 800 V I D = 6 A V GS = 10 V R G = 50 (see test circuit, figure 5) V DD = 400 V ID = 6 A V GS = 10 V Min. Typ. 70 210 180 Max. 90 280 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 125 15 55 150 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 800 V I D = 6 A V GS = 10 V R G = 50 (see test circuit, figure 5) Min. Typ. 190 50 265 Max. 250 65 345 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM(*) V S D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A V GS = 0 1100 31 57 I SD = 6 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 6 24 2 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area Safe Operating Areas For TO-218 Safe Operating Areas For ISOWATT218 3/10 STH6N100/FI Thermal Impedeance For TO-218 Thermal Impedance For ISOWATT218 Derating Curve For TO-218 Derating Curve For ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STH6N100/FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STH6N100/FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STH6N100/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10 STH6N100/FI TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H O F R 1 2 3 P025A 8/10 G STH6N100/FI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.45 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.017 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 9/10 STH6N100/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compone in life support devices or systems without express nts written approval of SGS-THOMSON Microelectonics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 10/10 |
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