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| STB60NH02L N-CHANNEL 24V - 0.0085 - 60A DPAK STripFETTM III POWER MOSFET TYPE STB60NH02L VDSS 24 V RDS(on) < 0.0105 ID 60 A TYPICAL RDS(on) = 0.0085 @ 10 V TYPICAL RDS(on) = 0.012 @ 5 V RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 (Suffix "T4") DESCRIPTION The STB60NH02L utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE STB60NH02LT4 MARKING B60NH02L PACKAGE TO-263 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj May 2004 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 20 60 43 240 70 0.47 280 -55 to 175 Unit V V V V A A A W W/C mJ C 1/11 STB60NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.14 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 25 mA, VGS = 0 VDS = 20 V VDS = 20 V VGS = 20V Min. 24 1 10 100 Typ. Max. Unit V A A nA TC = 125C ON (4) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 30 A ID = 15 A Min. 1 Typ. 1.8 0.0085 0.012 Max. 2.5 0.0105 0.020 Unit V DYNAMIC Symbol gfs (4) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions VDS = 15 V ID = 25 A Min. Typ. 27 1400 400 55 Max. Unit S pF pF pF VDS = 15V f = 1 MHz VGS = 0 f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1 2/11 STB60NH02L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Qoss(5) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Output Charge Test Conditions VDD = 10 V ID = 30 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD= 10 V ID= 60 A VGS= 10 V Min. Typ. 10 130 24 5 3.4 9.4 32 Max. Unit ns ns nC nC nC nC VDS= 16 V VGS= 0 V SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 10 V ID = 30 A VGS = 10 V RG = 4.7, (Resistive Load, Figure 3) Min. Typ. 27 16 Max. 21.6 Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM VSD (4) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A VGS = 0 36 36 2 Test Conditions Min. Typ. Max. 60 240 1.3 48 48 Unit A A V ns nC A ISD = 60 A di/dt = 100A/s Tj = 150C VDD = 18 V (see test circuit, Figure 5) (1) Garanted when external Rg=4.7 and tf < tfmax. (2) Pulse width limited by safe operating area (3) Starting Tj = 25 oC, ID = 25A, VDD = 15V (4) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (5) Qoss = Coss* Vin , Coss = Cgd + Cds . See Appendix A . . Safe Operating Area Thermal Impedance 3/11 STB60NH02L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/11 STB60NH02L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/11 STB60NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STB60NH02L D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 4 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 7/11 STB60NH02L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 1.039 0.520 inch MIN. MAX. 12.992 BASE QTY 1000 BULK QTY 1000 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 8/11 STB60NH02L 9/11 STB60NH02L 10/11 STB60NH02L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com 11/11 |
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