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| STB16PF06L P-CHANNEL 60V - 0.11 - 16A D2PAK STripFETTM MOSFET Table 1: General Features TYPE STB16PF06L s s s Figure 1: Package ID 16 A Pw 70 W VDSS 60 V RDS(on) < 0.125 TYPICAL RDS(on) = 0.11 LOW THRESHOLD DEVICE LOW GATE CHARGE 3 1 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 Figure 2: Internal Schematic Diagram APPLICATIONS s MOTOR CONTROL s DC-DC CONVERTERS Table 2: Order Codes PART NUMBER STB16PF06LT4 MARKING B16PF06L PACKAGE D2PAK PACKAGING TAPE & REEL Rev. 1 September 2004 1/10 STB16PF06L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 60 60 16 16 11.4 64 70 0.4 20 250 - 55 to 175 Unit V V V A A A W W/C V/ns mJ C ( ) Pulse width limited by safe operating area (1) ISD 16A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX. (2) Starting Tj = 25C , ID = 8 A , VDD = 30 V Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse Table 4: Thermal Data Rthj-case Rthj-PCB(#) Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-PCB Max Maximum Lead Temperature For Soldering Purpose (1.6 mm frrom case, for 10sec) 2.14 34 300 C/W C/W C (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 16V VDS = VGS, ID = 100A VGS = 10V, ID = 8 A VGS = 5V, ID = 8 A 1.5 0.11 0.130 0.125 0.165 Min. 60 1 10 100 Typ. Max. Unit V A A nA V 2/10 STB16PF06L ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 10 V, ID = 3 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 7.2 630 121 49 129 90 25.5 19.5 11.4 5.2 4.7 15.5 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 30 V, ID = 8 A, RG = 4.7 VGS = 4.5 V (Resistive Load , Figure 1) VDD = 48 V, ID = 16 A, VGS = 4.5V (See test circuit, Figure 2) Table 7: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8 A, VGS = 0 ISD = 16 A, di/dt = 100A/s VDD = 20V, Tj = 150C (see test circuit, Figure 3) 48.5 87.3 3.6 Test Conditions Min. Typ. Max. 16 64 1.3 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/10 STB16PF06L Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/10 STB16PF06L Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Dource-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/10 STB16PF06L Figure 15: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Wafeform Figure 16: Switching Times Test Circuit For Resistive Load Figure 19: Gate Charge Test Circuit Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/10 STB16PF06L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 7/10 STB16PF06L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 8/10 STB16PF06L Table 8: Revision History Date 13/Sep/2004 Revision 1 First Release. Description of Changes 9/10 STB16PF06L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 |
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