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Bulletin I25191 rev. D 04/03
ST730C..L SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK)
990A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical
case style TO-200AC (B-PUK)
Units
A C A C A A KA2s KA2s V s C
ST730C..L
990 55 2000 25 17800 18700 1591 1452 800 to 2000 150 - 40 to 125
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ST730C..L Series
Bulletin I25191 rev. D 04/03
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
08 12 ST730C..L 14 16 18 20
V DRM /V RRM , max. repetitive peak and off-state voltage V
800 1200 1400 1600 1800 2000
VRSM , maximum nonrepetitive peak voltage V
900 1300 1500 1700 1900 2100
I DRM /I RRM max.
@ TJ = TJ max
mA
80
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST730C..L
990 (375) 55 (85) 2000 17800 18700 15000 15700
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I 2t
Maximum I2 t for fusing
1591 1452 1125 1027
I 2t
Maximum I2 t for fusing
15910 0.98
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 1.12 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.27 1.62 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 2000A, TJ = TJ max, tp = 10ms sine pulse
0.32
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time
ST730C..L
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g/dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 750A, TJ = TJ max, di/dt = 60A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s
150
2
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ST730C..L Series
Bulletin I25191 rev. D 04/03
Blocking
Parameter
dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST730C..L
500 80
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM /V RRM applied
Triggering
Parameter
PGM IGM +VGM -VGM Maximum peak gate power
ST730C..L
10.0 2.0 3.0 20
Units Conditions
W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, tp 5ms
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
ST730C..L
-40 to 125 -40 to 150 0.073 0.031 0.011 0.006 14700 (1500)
Units Conditions
C DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W N (Kg) g
wt
Approximate weight Case style
255
TO - 200AC (B-PUK)
See Outline Table
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ST730C..L Series
Bulletin I25191 rev. D 04/03
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction Conduction angle
Single Side Double Side 180 120 90 60 30 0.009 0.011 0.014 0.020 0.036 0.009 0.011 0.014 0.020 0.036 Single Side Double Side 0.006 0.010 0.015 0.021 0.036 0.006 0.011 0.015 0.021 0.036 K/W TJ = TJ max.
Units
Conditions
Ordering Information Table
Device Code
ST
1
73
2
0
3
C
4
20
5
L
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) L = Puk Case TO-200AC (B-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST730C..L Series
Bulletin I25191 rev. D 04/03
Outline Table
0.7 (0.03) MIN. 27 (1.06) MAX. 34 (1.34) DIA. MAX. TWO PLACES
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20 5 58.5 (2.3) DIA. MAX. 4.7 (0.18)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
Maximum Allowa ble Heatsink Temperature (C)
130 120 110 100 90 80 70 60 50 40 0 100 200
Maximum Allow able Heatsink T emperat ure (C)
S 730C..L S T eries (S ingle S Cooled) ide RthJ-hs (DC) = 0.073 K/ W
130 120 110 100 90 80 70 60 50 40 30 20 0 200 30
S 730C..L S T eries (S ingle S Cooled) ide R thJ-hs (DC) = 0.073 K/ W
Conduction Angle
Conduc tion Period
30
60 90 120 180
60 90 120 180 400 600 800 DC 1000 1200
300 400
500
600
700
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-s tate Current (A)
Fig. 2 - Current Ratings Characteristics
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ST730C..L Series
Bulletin I25191 rev. D 04/03
Maximum Allowable Heatsink T emperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 200 400 600 800 1000 1200 1400 Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Conduction Angle
Maximum Allowable Heatsink T emperat ure (C)
S 730C..L S T eries (Double S Cooled) ide RthJ-hs (DC) = 0.031 K/ W
130 120 110 100 90 80 70 60 50 40 30 20 0 400 30 60
S 730C..L S T eries (Double S ide Cooled) RthJ-hs (DC) = 0.031 K/ W
Conduction Period
30
60
90
120
90 120
180
180 DC
800
1200 1600 2000 2400
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
2500 180 120 90 60 30
Maximum Average On-s tate Power Los (W) s
3500 3000 2500 2000 RMS Limit 1500
Conduction Period
2000
R Limit MS
1500
DC 180 120 90 60 30
1000
Conduc tion Angle
1000 500 0 0 400 800 1200 1600 2000 2400 Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
500
S 730C..L S T eries TJ = 125C 0 200 400 600 800 1000 1200 1400
S 730C..L S T eries T = 125C J
0 Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics
Peak Half S Wave On-state Current (A) ine
Peak Half S Wave On-state Current (A) ine
16000 15000 14000 13000 12000 11000 10000 9000 8000 7000 1
At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
18000 17000
Maximum Non R epetitive S urge Current Versus Pulse T rain Duration. Control 16000 Of Conduction May Not Be Maintained. Initial T = 125C J 15000 No Voltage Reapplied Rated VRRMReapplied 14000 13000 12000 11000 10000 9000 8000 S 730C..L S T eries
S 730C..L S T eries 10 100
7000 0.01
0.1 Pulse T rain Duration (s)
1
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
6
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ST730C..L Series
Bulletin I25191 rev. D 04/03
10000 Instantaneous On-state Current (A) T = 25C J T = 125C J
1000
S 730C..L S T eries 100 0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0.1 S teady S tate Value R thJ-hs = 0.073 K/ W (S ingle S ide Cooled) R thJ-hs = 0.031 K/ W (Double S Cooled) ide 0.01 (DC Operation)
T rans ient T hermal Impedance ZthJ-hs (K/ W)
S 730C..L S T eries
0.001 0.001
0.01
0.1 S quare Wave Puls Duration (s) e
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) R ommended load line for ec <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms
T j=25 C
T j=125 C
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 730C..L S T eries 0.1 1
Frequenc y Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
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7
ST730C..L Series
Bulletin I25191 rev. D 04/03
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 04 /03
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