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Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-450 To Order Previous Datasheet Index Next Data Sheet Bulletin I25181/B ST173S SERIES INVERTER GRADE THYRISTORS Stud Version Features All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 175A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ ST173S 175 85 275 4680 4900 110 100 1000 to 1200 15 to 25 - 40 to 125 Units A C A A A KA2s KA2s V s C case style TO-209AB (TO-93) D-451 To Order Previous Datasheet Index Next Data Sheet ST173S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V ST173S 10 12 1000 1200 VRSM , maximum non-repetitive peak voltage V 1100 1300 I DRM /I RRM max. @ TJ = TJ max. mA 40 Current Carrying Capability Frequency 180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 500 450 330 170 50 V DRM 50 60 o ITM 180 el 320 290 190 80 50 50 85 790 810 760 510 50 V DRM 60 o ITM 100s 550 540 490 300 50 85 4510 1970 1050 480 50 V DRM 60 ITM Units 3310 1350 680 280 50 85 V A/s C A 47 / 0.22F 47 / 0.22F 47 / 0.22F On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current ST173S 175 85 275 4680 4900 3940 4120 Units A C Conditions 180 conduction, half sine wave DC @ 75C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max I2 t Maximum I2t for fusing 110 100 77 71 I 2 t Maximum I2t for fusing 1100 t = 0.1 to 10ms, no voltage reapplied D-452 To Order Previous Datasheet Index Next Data Sheet ST173S Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics D-456 To Order Previous Datasheet Index Next Data Sheet ST173S Series Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics D-457 To Order Previous Datasheet Index Next Data Sheet ST173S Series Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics D-458 To Order Previous Datasheet Index Next Data Sheet ST173S Series Fig. 14 - Maximum On-state Energy Power Loss Characteristics Fig. 15 - Gate Characteristics D-459 To Order Previous Datasheet Index Next Data Sheet ST173S Series On-state Conduction Parameter V TM Max. peak on-state voltage ST173S 2.07 1.55 1.58 0.87 Units Conditions ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse p V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 V (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. Low level value of forward slope resistance m 0.82 600 1000 mA r t2 IH IL High level value of forward slope resistance Maximum holding current Typical latching current T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST173S 1000 1.1 Min Max 25 Units A/s Conditions TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s p Typical delay time s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, t = 500s, dv/dt: see table in device code p t q Max. turn-off time 15 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST173S 500 40 Units V/s mA Conditions TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST173S 60 10 10 20 Units W A Conditions TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms p PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger V 5 200 3 20 0.25 mA TJ = TJ max, t 5ms p TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max., rated VDRM applied D-453 To Order Previous Datasheet Index Next Data Sheet ST173S Series Thermal and Mechanical Specifications Parameter TJ T stg ST173S -40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210) Units C Conditions Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10% RthJC RthCS T DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Mounting surface, smooth, flat and greased Lubricated threads wt Approximate weight Case style 280 TO-209AB (TO-93) RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 1 17 2 3 3 S 4 12 5 P 6 F 7 K 8 0 9 10 1 2 3 4 5 6 7 8 9 - Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) q dv/dt - tq combinations available dv/dt (V/s) 15 18 20 25 30 20 CL CP CK CJ -50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH t (s) *Standard part number. All other types available only on request. 10 - Critical dv/dt: None L = 500V/sec (Standard value) = 1000V/sec (Special selection) D-454 To Order Previous Datasheet Index Next Data Sheet ST173S Series Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. )M IN (0. 9 .5 37 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. C.S. 16mm 2 RED SILICON RUBBER 15 7 (6 .1 8) 1 70 (6.69 ) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 (.025 s.i.) 20 (0 . FLEXIBLE LEAD 79 )M IN . . Fast-on Terminals AMP. 280000-1 REF-250 215 (8.46) 70 (2 .7 5) M IN . RED SHRINK 29 (1 .1 4) M A X. WHITE SHRINK 10 (0.39) 22.5 (0.88) MAX. DIA. 1 2.5 (0 .4 9) M A X . 2 1 (0 .8 3) M A X. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) CERAMIC HOUSING FLAG TERMINALS 22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 1 3 ( 0.5 1 ) 8 0 ( 3 .1 5 ) M A X . 1.5 (0.06) DIA. 38 .5 (1 .5 2 ) M A X . DIA. 27.5 (1.08) MAX. 2 7 .5 (1 .08 ) M A X . 1 6 (0 .63 ) M A X . Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) D-455 To Order |
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