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| Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = -IC IFM = -ICM IFSM I 2t RGE = 20 k Tcase = 25/75 C Tcase = 25/75 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C Values Units 600 600 70 / 50 140 / 100 20 250 -40 ... +150 (125) 2500 Class F 40/125/56 75 / 50 140 / 100 440 970 V V A A V W C V SEMITRANS(R) M Superfast NPT-IGBT Modules SKM 50 GB 063 D Inverse Diode A A A A2s SEMITRANS 2 Characteristics Symbol Conditions 1) V(BR)CES VGE = 0, IC = 1,5 mA VGE(th) VGE = VCE, IC = 1 mA ICES Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C IGES VGE = 20 V, VCE = 0 VCEsat VGE = 15 V; IC = 30 A IC = 50 A VCEsat Tj = 25 (125) C gfs VCE = 20 V, IC = 50 A CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 300 V VGE = -15 V / +15 V3) IC = 50 A, ind. load RGon = RGoff = 22 Tj = 125 C VCES 4,5 - - - - - 20 - - - - - - - - - - - - - - - - - - - min. typ. - 5,5 0,1 3 - 1,8(2,0) 2,1(2,4) - - 2800 300 200 - 50 40 300 30 2,5 1,8 1,45(1,35) - 10 31 3,2 - - - max. - 6,5 1,5 - 100 - 2,5(2,8) - 350 - - - 30 - - - - - - 1,7 0,9 15 - - 0,5 1,0 0,05 Units V V mA mA nA V V S pF pF pF pF nH ns ns ns ns mWs mWs V V m A C C/W C/W C/W GB Features * N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) * Low tail current with low temperature dependence * High short circuit capability, self limiting if term. G is clamped to E * Pos. temp.-coeff. of VCEsat * 50 % less turn off losses 9) * 30 % less short circuit current 9) * Very low Cies, Coes, Cres 9) * Latch-up free * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould * Large clearance (10 mm) and creepage distances (20 mm) Typical Applications * Switching (not for linear use) * Switched mode power supplies * UPS * Three phase inverters for servo / AC motor speed control * Pulse frequencies also above 10 kHz 1) Inverse Diode 8) VF = VEC IF = 50 A VTO rt IRRM Qrr Rthjc Rthjc Rthch VGE = 0 V; Tj = 25 (125 C) Tj = 125 C Tj = 125 C IF = 50 A; Tj = 125 C2) IF = 50 A; Tj = 125 C2) per IGBT per diode per module Thermal characteristics Tcase = 25 C, unless otherwise specified 2) IF = - IC, VR = 300 V, -diF/dt = 800 A/s, VGE = 0 V 3) Use VGEoff = -5... -15 V 8) CAL = Controlled Axial Lifetime Technology 9) Compared to PT-IGBT Cases and mech. data B 6 - 12 (c) by SEMIKRON 0898 B6-7 SKM 50 GB 063 D 300 W 250 6 200 5 150 4 3 2 50 1 P tot 0 0 TC 20 40 60 80 100 120 140 C 160 E 0 0 IC 20 40 60 80 100 120 A 140 E off M50GB 06.X LS -1 8 mWs 7 M50GB 06.X LS -2 E on Tj = 125 C VCE = 300 V VGE = 15 V RG = 22 100 Fig. 1 Rated power dissipation Ptot = f (TC) M50GB 06.X LS -3 Fig. 2 Turn-on /-off energy = f (IC) M50GB 06.X LS -4 6 mWs 5 1000 E on Tj = 125 C VCE = 300 V VGE = 15 V IC = 50 A A tp=12s 1 pulse TC = 25 C Tj 150 C 100 4 100s 3 E off 2 1 1 E 0 0 RG 20 40 60 80 100 120 IC 0,1 1 V CE 10 100 1000 V 10000 1ms 10ms 10 Not for linear use Fig. 3 Turn-on /-off energy = f (RG) M50GB 06.X LS -5 Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) M50GB 06.X LS -6 2,5 Tj 150 C VGE = 15 V RGoff = 22 IC = 50 A 12 2 10 di/dt= 300 A/s 900 A/s 1500 A/s 8 1,5 6 1 4 0,5 ICpuls/IC 0 0 V CE 100 200 300 400 500 600 V 700 Tj 150 C VGE = 15 V tsc 10 s L < 35 nH IC = 50 A allowed numbers of short circuits: <1000 time between short circuits: >1s 2 ICSC/IC 0 0 V CE 100 200 300 400 500 600 V 700 Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit IC = f (VCE) B6-8 0796 (c) by SEMIKRON M50GB 06.X LS -8 80 A 70 60 50 40 30 20 10 IC 0 0 TC 20 40 60 80 100 120 140 160 C Tj = 150 C VGE 15V Fig. 8 Rated current vs. temperature IC = f (TC) M50GB 06.X LS -9 M 50GB 06.X LS -10 100 A 80 17V 15V 13V 11V 9V 7V 100 A 80 17V 15V 13V 11V 9V 7V 60 60 40 40 20 IC 0 0 V CE 1 2 3 4 V 5 20 IC 0 0 V CE 1 2 3 4 V 5 Fig. 9 Typ. output characteristic, tp = 250 s; Tj = 25 C Fig. 10 Typ. output characteristic, tp = 250 s; Tj = 125 C M50GB 06.X LS -12 100 Pcond(t) = VCEsat(t) * IC(t) VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) VCE(TO)(Tj) 1,2 - 0,001 (Tj -25) [V] typ.: rCE(Tj) = 0,018 + 0,00008 (Tj -25) [] max.: rCE(Tj) = 0,026 + 0,00008 (Tj -25) [] A 80 60 40 20 valid for VGE = + 15 +2 [V]; IC 0,3 ICnom -1 IC 0 0 V GE 2 4 6 8 10 12 V 14 Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V (c) by SEMIKRON B6-9 SKM 50 GB 063 D M 50GB06.XLS-13 20 V 18 16 14 12 10 8 6 4 VGE 2 0 0 QGate 40 80 120 nC 160 100V 300V M 50GB06.XLS-14 ICpuls = 50 A 10 nF Cies 1 VGE = 0 V f = 1 MHz Coes Cres 0,1 C 0,01 0 VCE 10 20 30 V 40 Fig. 13 Typ. gate charge characteristic M 50GB06.XLS-15 Fig. 14 Typ. capacitances vs.VCE M 50GB06.XLS-16 1000 ns tdoff Tj = 125 C VCE = 300 V VGE = 15 V RGon = 22 RGoff = 22 induct. load 1000 t doff ns Tj = 125 C VCE = 300 V VGE = 15 V IC = 50 A induct. load tdon 100 tr tdon t tf t 10 0 IC 20 40 60 80 100 A 120 10 0 RG 20 40 60 80 100 120 tf 100 tr Fig. 15 Typ. switching times vs. IC M 50GB06.XLS-17 Fig. 16 Typ. switching times vs. gate resistor RG M 50GB06.XLS-18 80 A Tj=125C typ. 60 Tj=25C typ. Tj=125C max. Tj=25C max. 40 0,8 mJ RG= 10 VCC = 300 V Tj = 125 C VGE = 15 V 0,6 15 25 0,4 40 80 20 0,2 EoffD 0 0 VF 0,4 0,8 1,2 1,6 V 2 0 IF 20 40 60 80 A 100 IF 0 Fig. 17 Typ. CAL diode forward characteristic B 6 - 10 Fig. 18 Diode turn-off energy dissipation per pulse 0898 (c) by SEMIKRON M 50GB 06.X LS -19 M 50GB 06.X LS -20 1 K/W 1 K/W 0,1 D=0,50 0,20 0,10 0,05 0,02 0,01 single pulse 0,1 D=0,5 0,2 0,1 0,05 0,02 0,01 0,01 0,01 single pulse ZthJC 0,001 0,00001 tp ZthJC 0,001 0,00001 tp 0,0001 0,001 0,01 0,1 s 1 0,0001 0,001 0,01 0,1 s 1 Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f 80 A 60 M50GB 06.X LS -22 Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f M50GB 06.X LS -23 RG= 10 VCC = 300 V Tj = 125 C VGE = 15 V 80 A RG= 10 60 VCC = 300 V Tj = 125 C VGE = 15 V IF = 50 A 15 40 25 40 20 IRR 0 0 IF 20 40 60 80 A 100 80 20 80 40 40 25 15 IRR 0 0 diF/dt 1000 2000 3000 A/s 4000 Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) M 50GB 06.X LS -24 Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt) VCC = 300 V Tj = 125 C VGE = 15 V 6 C 5 80 40 25 15 RG= 10 IF= 75 A 50 A 38 A 3 25 A 2 13 A 1 Qrr 0 0 diF/dt 1000 2000 3000 4000 A/s 4 5000 Fig. 24 Typ. CAL diode recovered charge (c) by SEMIKRON 0898 B 6 - 11 SKM 50 GB 063 D SEMITRANS 2 Case D 61 UL Recognized File no. E 63 532 SKM 50 GB 063 D Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions min. M1 M2 a w to heatsink, SI Units(M6) to heatsink, US Units for terminals, SI Units(M5) for terminals, US Units 3 27 2,5 22 - - Values typ. - - - - - - Units max. 5 44 5 44 5x9,81 160 Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Eight devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 2) Larger packing units of 20 or 42 pieces are used if suitable Accessories B 6 - 4 SEMIBOX C - 1. B 6 - 12 0898 (c) by SEMIKRON |
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