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| SI3851DV New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.200 @ VGS = -10 V 0.360 @ VGS = -4.5 V ID (A) "1.8 "1.2 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (v) Diode Forward Voltage 0.5 V @ 0.5 A IF (A) 0.5 S K TSOP-6 Top View A 1 6 K G 3 mm S 2 5 N/C G 3 4 D 2.85 mm D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a 150 C) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 70978 S-61845--Rev. A, 11-Oct-99 www.vishay.com S FaxBack 408-970-5600 TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec -30 30 "20 "1.8 "1.5 "7 -1.05 0.5 7 1.15 0.73 1.0 0.64 Steady State Unit V "20 "1.6 "1.2 A -0.75 0.83 0.53 0.76 0.48 -55 to 150 _C W 2-1 SI3851DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t v 5 sec Junction-to-Ambient J i A bi MOSFET Steady State Schottky MOSFET Junction-to-Foot Steady State Schottky Notes a. Surface Mounted on 1" x 1" FR4 Board. RthJF 140 75 80 165 90 95 New Product Device MOSFET Schottky Symbol Typical 93 103 Maximum 110 125 150 Unit RthJA 130 _C/W MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 75_C VDS w -5 V, VGS = -10 V VGS = -10 V, ID = -1.8 A VGS = -4.5 V, ID = -1.2 A VDS = -15 V, ID = -1.8 A IS = -1.05 A, VGS = 0 V -5 0.165 0.298 2.4 -0.83 -1.10 0.200 0.360 W S V -1.0 "100 -1 -10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.05 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -15 V VGS = -5 V ID = -1.8 A 15 V, 5 V, 18 2.4 0.9 0.8 8 12 12 7 30 12 18 18 11 60 ns 3.6 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 0.5 A IF = 0.5 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 75_C Vr = 30 V, TJ = 125_C Vr = 10 V Min Typ 0.45 0.35 0.002 0.06 1.5 24 Max 0.5 0.4 0.100 1 10 Unit V Maximum R Mi Reverse Leakage Current Lk C Irm CT mA A Junction Capacitance www.vishay.com S FaxBack 408-970-5600 pF 2-2 Document Number: 70978 S-61845--Rev. A, 11-Oct-99 SI3851DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 7 V 8 I D - Drain Current (A) I D - Drain Current (A) 6 25_C 125_C 5V 6 6V TC = -55_C 8 Vishay Siliconix MOSFET Transfer Characteristics 4 4 4V 2 2V 0 0 1 2 3 4 5 3V 2 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 300 Capacitance 0.5 r DS(on)- On-Resistance ( W ) C - Capacitance (pF) 240 Ciss 0.4 VGS = 4.5 V 180 0.3 VGS = 10 V 120 Coss 60 Crss 0.2 0.1 0 0 1 2 3 4 5 6 7 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 1.8 A Gate Charge 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.8 A V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 70978 S-61845--Rev. A, 11-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-3 SI3851DV Vishay Siliconix New Product MOSFET On-Resistance vs. Gate-to-Source Voltage 0.6 ID = 1.8 A 0.5 r DS(on)- On-Resistance ( W ) I S - Source Current (A) ID = 1 A 0.4 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 TJ = 150_C 1 0.3 TJ = 25_C 0.2 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 8 Single Pulse Power, Junction-to-Ambient 0.4 6 V GS(th) Variance (V) 0.2 ID = 250 mA Power (W) 4 0.0 2 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70978 S-61845--Rev. A, 11-Oct-99 SI3851DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R - Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F - Forward Current (A) 1 TJ = 150_C 1 0.1 30 V 0.01 10 V TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V) 125 Capacitance CT - Junction Capacitance (pF) 100 75 VGS = 10 V ID = 1.8 A 50 25 0 0 6 12 18 24 30 VKA - Reverse Voltage (V Document Number: 70978 S-61845--Rev. A, 11-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-5 SI3851DV Vishay Siliconix New Product SCHOTTKY TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 140_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70978 S-61845--Rev. A, 11-Oct-99 |
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