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| Chip Silicon Rectifier SFM31 THRU SFM36 Super fast recovery type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.071(1.8) Mechanical data Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gram 0.040 (1.0) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 3.0 100 5.0 100 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TSTG -55 16 45 C/w pF +150 o C SYMBOLS MARKING CODE S31 S32 S33 S34 S35 S36 V RRM (V) *1 V RMS (V) 35 70 105 140 210 280 *2 VR *3 VF *4 T RR *5 Operating temperature ( o C) (V) 50 100 150 200 300 400 (V) (nS) SFM31 SFM32 SFM33 SFM34 SFM35 SFM36 50 100 150 200 300 400 *1 Repetitive peak reverse voltage 0.95 35 -55 to +150 *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 1.25 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (SFM31 THRU SFM36) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 3.6 3.0 2.4 1.8 1.2 0.6 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 ~S FM 34 INSTANTANEOUS FORWARD CURRENT,(A) SF M3 1 3.0 .3 Tj=25 C Pulse Width 300us 1% Duty Cycle SF M 35 ~S FM 36 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .03 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 100 .003 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 80 FORWARD VOLT AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 60 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 40 20 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 70 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 60 50 40 30 20 10 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) |
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