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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF35N20M SFF35N20Z 55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET Features: * * * * * * * TRENCH GATE technology Lowest ON-resistance in the industry UIS rated Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Enhanced replacement for IRHM250 types DESIGNER'S DATA SHEET TO-254 and TO-254Z note 1: Drain Current is package limited * * Maximum Ratings Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (junction temperature limited) Max. Continuous Drain Current (package limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254Z(Z) TO-254 (M) Symbol VDSS VGS @ TC = 25C @ TC = 125C @ TC = 25C @ L= 0.1 mH @ L= 0.1 mH @ TC = 25C ID1 ID2 ID3 IAR EAR PD TOP & TSTG R0JC Value 200 20 85 12 55 35 60 210 -55 to +175 0.7 (typ 0.55) Units V V A A A mJ W C C/W PIN 3 PIN 2 PIN 3 PIN 2 PIN 1 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0018A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFRC35N20M SFRC35N20Z Symbol VGS = 0V, ID = 250A VGS = 10V, ID = 30A, Tj= 25oC VGS = 10V, ID = 30A, Tj=125oC VGS = 10V, ID = 30A, Tj= 175oC VDS = VGS, ID = 250A VGS = 20V VDS = 200V, VGS = 0V, Tj = 25oC VDS = 200V, VGS = 0V, Tj = 125oC VDS = 200V, VGS = 0V, Tj = 175oC VDS = 10V, ID = 30A, Tj = 25oC VGS = 10V VDS = 100V ID = 65A VGS = 10V VDS = 100V ID = 65A RG = 2.5O min IF = 65A, VGS = 0V IF = 50A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Q gs Q gd td(on) tr td(off) tf VSD trr IRM(rec) Qrr Ciss Coss Crss Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Min 200 -- -- -- 2.0 -- -- -- -- 23 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ Max -- 26 51 67 -- -- -- -- -- -- 90 25 35 25 225 50 200 1.0 140 8 0.55 5100 480 210 -- 35.0 -- -- 4.0 100 1 50 250 -- 135 -- -- 40 340 75 300 1.50 220 12.5 1.3 -- -- -- Units V mO V nA A A A Mho nC nsec V nsec A C pF NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines / lead bending options / pinout configurations Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0018A DOC |
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