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| PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF1310M SFF1310Z 40 AMPS 200 VOLTS 0.050 S N-CHANNEL POWER MOSFET TO-3 DESIGNER'S DATA SHEET FEATURES: * Rugged construction with polysilicon gate * Low RDS (on) and high transconductance * Excellent high temperature stability * Very fast switching speed * Fast recovery and superior dv/dt performance * Increased reverse energy capability * Low input and transfer capacitance for easy paralleling * Hermetically sealed package * TX, TXV, and Space Level screening available * Replaces: SMM40N20 Type MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation @ TC = 25oC @ TC = 55oC SYMBOL VDS VGS ID Top & Tstg R 2JC PD VALUE 200 20 40 -55 to +150 0.5 250 190 o UNIT Volts Volts Amps o C C/W Watts PACKAGE OUTLINE: TO-3 PIN OUT: DRAIN: SOURCE: GATE: PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0004A SFF1310M SFF1310Z RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ID = 37.5A PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) SYMBOL BVDSS RDS(on) ID(on) VGS(th) g fs MIN 200 50 2.0 20 TYP 25 190 35 95 28 38 110 30 1.5 4400 800 285 MAX 0.050 UNIT V S A V S(E) ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID = 4mA) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID) Zero Gate Voltage Drain Current VDS = max rated Voltage, TA = 25oC (VGS = 0V) VDS = 80% rated VDS, TA = 125oC Gate to Source Leakage Forward Gate to Source Leakage Reverse 4.0 250 1000 +100 -100 220 50 120 35 40 130 35 1.50 225 - I DSS IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD :A nA At rated VGS VGS = 10 V 50% rated VDS 50% rated ID VDD =50% rated VDS 50% rated ID RG = 6.2 S Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DELAY Time Fall Time Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: nC nsec V nsec :C pF TJ =25oC IF = 10A di/dt = 100A/:sec VGS =0 Volts VDS =25 Volts f =1 MHz trr QRR Ciss Coss Crss |
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