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| SHINDENGEN Schottky Rectifiers (SBD) Single S5S4M 40V 5A OUTLINE DIMENSIONS Case TO-220 Case :: TO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -40*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 40 Repetitive Peak Surge Reverse Voltage VRRSMPulse width 0.5ms, duty 1/40 45 Average Rectified Forward Current 50Hz sine wave, R-load Tc=138*Z*@ IO 5 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z 100 Repetitive Peak Surge Reverse Power PRRSMPulse width 10Es, Tj=25*Z 330 Mounting Torque TOR * Recommended torque* i F 0.3Nm*j 0.5 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Forward Voltage VF IF=5A, Pulse measurement Reverse Current IR VR RM =V , Pulse measurement Junction Capacitance f=1MHz, R V =10V Cj Thermal Resistance AEjc junction to case Unit *Z *Z V V A A W Nm Ratings Max.0.55 Max.3.5 Typ.180 Max.3 Unit V mA pF *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S5S4M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S5S4M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] S5S4M 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] S5S4M 10 Reverse Power Dissipation DC Reverse Power Dissipation PR [W] 8 D=0.05 0.1 0.2 6 0.3 4 0.5 2 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T S5S4M 6 Forward Power Dissipation Forward Power Dissipation PF [W] 5 DC D=0.8 4 0.2 0.05 2 0.1 0.3 SIN 0.5 3 1 0 0 1 2 3 4 5 6 7 8 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T S5S4M 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T S5S4M 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=125C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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