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RMPA2059 WCDMA Power EdgeTM Power Amplifier Module
May 2005
RMPA2059
WCDMA PowerEdgeTM Power Amplifier Module
Features
* 40% CDMA efficiency at +27dBm average output power * Single positive-supply operation and low power and shutdown modes * Meets UTMS/WCDMA and HSDPA performance requirements * Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm * Industry standard pinout * Internally matched to 50 and DC blocked RF input/ output
General Description
The RMPA2059 power amplifier module (PAM) is designed for WCDMA applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View) MMIC
Vcc1 1 RF IN GND Vmode Vref
10 Vcc2
INPUT MATCH OUTPUT MATCH BIAS/MODE SWITCH
2 3 4 5
9 GND 8 RF OUT 7 GND 6 GND
11 (paddle ground on package bottom)
(c)2005 Fairchild Semiconductor Corporation
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RMPA2059 Rev. F
RMPA2059 WCDMA Power EdgeTM Power Amplifier Module
Absolute Ratings1
Symbol
Vcc1, Vcc2 Vref Vmode Pin TSTG Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Parameter
Min
0 2.7 0 - -55
Max
5.0 5.0 3.0 +5 +150
Units
V V V dBm C
Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol
f Gp Po PAEd WCDMA Operation Power Gain Linear Output Power PAEd (digital) @ +27dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm Itot High Power Total Current Low Power Total Current Adjacent Channel Leakage Ratio ACLR1 ACLR2 5.0MHz Offset 10.0MHz Offset -40 -44 -55 -63 General Characteristics VSWR NF Rx No 2fo-5fo S Tc Iccq Iref Icc(off) Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2,3 Ruggedness w/ Load Mismatch3 Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current -30 50 4 1 8 5 DC Characteristics mA mA A Vmode2.0V Po+27dBm No applied RF signal 2.0:1 3 -139 -30 -60 10:1 85 C dB dBm/Hz Po<+27dBm; 2110 to 2170MHz dBc dBc Po+27 dBm Load VSWR 5.0:1 No permanent damage dBc dBc dBc dBc 27 16 40 9.5 20 365 120 26.5 24 dB dB dBm dBm % % % mA mA Po=+27dBm; Vmode=0V Po=+16dBm; Vmode2.0V Vmode=0V Vmode2.0V Vmode=0V Vmode2.0V Vmode2.0V, Vcc=1.4V Po=+27dBm, Vmode=0V Po=+16dBm, Vmode2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH Po=+27 dBm; Vmode=0V Po=+16 dBm; Vmode2.0V Po=+27 dBm; Vmode=0V Po=+16 dBm; Vmode2.0V
Parameter
Operating Frequency
Min
1920
Typ
Max
1980
Units
MHz
Comments
Notes: 1: All parameters met at Tc = +25C, Vcc = +3.4V, f = 1950MHz, and load VSWR 1.2:1. 2: All phase angles. 3: Guaranteed by design.
(c)2005 Fairchild Semiconductor Corporation
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RMPA2059 Rev. F
RMPA2059 WCDMA Power EdgeTM Power Amplifier Module
Recommended Operating Conditions1
Symbol
f Vcc1, Vcc2 Vref
Parameter
Operating Frequency Supply Voltage Reference Voltage Operating Shutdown Bias Control Voltage Low-Power High-Power Linear Output Power High-Power Low-Power Case Operating Temperature
Min
1920 3.0 2.7 0 1.8 0
Typ
3.4 2.85
Max
1980 4.2 3.1 0.5 3.0 0.5 +27 +16
Units
MHz V V V V V dBm dBm C
Vmode
2.0
Pout
Tc
Note:
-30
+85
1: RF input power for WCDMA Pout = +27dBm.
DC Turn On Sequence:
1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm)
Performance Data
RMPA2059 4x4 WCDMA PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm
RMPA2059 4x4 WCDMA PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm
32.0 31.0 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0 1920
1950 Frequency (MHz )
1980
45.0 44.0 43.0 42.0 41.0 40.0 39.0 38.0 37.0 36.0 35.0 1920
Gain (dB)
PAE (%)
1950 Frequency (MHz )
1980
RMPA2059 4x4 WCDMA PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm
RMPA2059 4x4 WCDMA PAM
Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm
-30.0 -32.0 -34.0 -36.0 -38.0 -40.0 -42.0 -44.0 -46.0 -48.0 -50.0 1920
1950 Frequency (MHz )
1980
-40.0 -42.0 -44.0 -46.0 -48.0 -50.0 -52.0 -54.0 -56.0 -58.0 -60.0 1920
ACLR1 (dBc)
ACLR2 (dBc)
1950 Frequency (MHz)
1980
(c)2005 Fairchild Semiconductor Corporation
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RMPA2059 Rev. F
RMPA2059 WCDMA Power EdgeTM Power Amplifier Module
Evaluation Board Layout
6
Description PC Board SMA Connector Terminals Assembly, RMPA2059 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) Solder Paste Solder Paste 4
Materials List
Qty 1 2 3 Ref 3 3 2 1 1 A/R A/R Item No. 1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 Part Number G657553-1 V2 #142-0701-841 #2340-5211TN G657637 GRM39XR102KS0V ECJ-1V81H102K C3216X5R1A335M GRM39YSV104Z16V ECJ-1VB1CID4K SN63 SN96 Vendor Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Indium Corp. Indium Corp
Evaluation Board Schematic
F 3.3 Fp 0001 Fp 0001 F 3.3
(c)2005 Fairchild Semiconductor Corporation
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RMPA2059 Rev. F
TUO FR 2AMS
2CCV
LRT
mhO 05 8
9 ,7 ,6 ,
5
)ESAB EGAKCAP(
01
3
XXWWY
9502
11
F 1.0
1
2
4
5
LRT
3
mhO 05
FERV
6
1CCV
5
Fp 0001
EDOMV
1 2
NI FR 1AMS
RMPA2059 WCDMA Power EdgeTM Power Amplifier Module
Package Outline
I/O 1 INDICATOR TOP VIEW 1 2 10 9
(4.00mm +.100 ) SQUARE -.050
3 4 5
2059
8 7 6
YWWXX
Y W 2059 WX X
1.60mm MAX.
FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 2 1 1.08mm 1.84mm BOTTOM VIEW .18mm DETAIL A. TYP. 3.65mm .10mm .10mm .40mm .45mm
Signal Descriptions
Pin #
1 2 3 4 5 6 7 8 9 10 11
Signal Name
Vcc1 RF In GND Vmode Vref GND GND RF Out GND Vcc2 GND
Description
Reference Voltage High Power/Low Power Mode Control Ground RF Input Signal Supply Voltage to Input Stage Ground Ground RF Output Signal Ground Supply Voltage to Output Stage Paddle Ground
(c)2005 Fairchild Semiconductor Corporation
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RMPA2059 Rev. F
RMPA2059 WCDMA Power EdgeTM Power Amplifier Module
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Dry-bake devices at 125C for 24 hours minimum. Note: The shipping trays cannot withstand 125C baking temperature. * Assemble the dry-baked devices within 7 days of removal from the oven. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated.
(c)2005 Fairchild Semiconductor Corporation
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RMPA2059 Rev. F
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15
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RMPA2059 Rev. F

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