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| ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT1020-500G TECHNICAL DATA High Power Infrared Laserdiode Structure: InGaAs quantum well Lasing wavelength: 1020 nm typ., multimode Max. optical power: 600 mW, 1 x 100 m aperture Package: 9 mm PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode LASERDIODE MUST BE COOLED! NOTE! Maximum Ratings (Tc=25C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 600 2 30 -40 .. +50 -70 .. +85 UNIT mW V V C C Optical-Electrical Characteristics (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po Threshold Current Ith Operation Current Iop Po = 500 mW Operation Voltage Uop Po = 500 mW Lasing Wavelength p Po = 500 mW Spectral Width FWHM Po = 500 mW Beam Divergence // Po = 500 mW Beam Divergence Po = 500 mW Differential Efficiency dPo/dIop Po = 500 mW Monitor Current Im Po = 500 mW MIN 990 7 15 0.4 150 TYP 500 300 790 1.5 1020 10 10 30 0.7 350 MAX UNIT mW 350 mA 820 mA 1.6 V 1040 nm nm 13 35 1.0 mW/mA 600 A |
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