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Datasheet File OCR Text: |
RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics (tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49058. PACKAGE AVAILABILITY PART NUMBER RHRP6120CC PACKAGE TO-220AB BRAND RHR6120C Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Symbol K NOTE: When ordering, use the entire part number. A1 A2 Packaging JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 CATHODE (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 RHRP6120CC Absolute Maximum Ratings (Per Leg) TC = +25oC, Unless Otherwise Specified RHRP6120CC Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) TC = 130oC Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Square Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ 1200 1200 1200 6 12 60 50 10 -65 to +175 UNITS V V V A A A W mJ oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications SYMBOL VF (Per Leg) TC = +25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 33 22 210 22 MAX 3.2 2.6 100 500 55 65 3 UNITS V V A A ns ns ns ns nC pF oC/W IF = 6A, TC = +25oC IF = 6A, TC = +150oC IR VR = 1200V, TC = +25oC VR = 1200V, TC = +150oC tRR IF = 1A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s tA tB QRR CJ RJC DEFINITIONS IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s IF = 6A, dIF/dt = 200A/s VR = 10V, IF = 0A VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 9), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 9). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width. D = duty cycle. 2 RHRP6120CC Typical Performance Curves 30 IR , REVERSE CURRENT (A) 500 +175oC IF, FORWARD CURRENT (A) 100 10 10 +100oC 1 +175oC 1 +100oC +25oC 0.1 +25oC 0.01 0.5 0 1 2 VF, FORWARD VOLTAGE (V) 3 4 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 60 TC = +25oC, dIF/dt = 200A/s 50 t, RECOVERY TIMES (ns) 40 30 tA 20 10 0 0.5 1 IF, FORWARD CURRENT (A) 6 tB FIGURE 2. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 100 TC = +100oC, dIF/dt = 200A/s tRR t, RECOVERY TIMES (ns) 80 60 tRR 40 tA 20 tB 0 0.5 1 IF, FORWARD CURRENT (A) 6 FIGURE 3. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 25oC FIGURE 4. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 100oC IF(AV) , AVERAGE FORWARD CURRENT (A) 125 TC = +175oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) 100 6 5 DC 4 SQ. WAVE 3 2 1 0 100 75 tRR 50 tA 25 tB 0 0.5 1 IF , FORWARD CURRENT (A) 6 115 130 145 160 175 TC , CASE TEMPERATURE (oC) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 175oC FIGURE 6. CURRENT DERATING CURVE 3 RHRP6120CC Typical Performance Curves 100 CJ , JUNCTION CAPACITANCE (pF) (Continued) 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuits and Waveforms V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 + LLOOP Q1 +V1 0 t2 t1 R2 Q4 t3 0 -V2 R3 C1 Q3 -V4 VR VRM R4 LLOOP DUT 0 0.25 IRM IRM +V3 Q2 t1 5t A(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 IF dIF dt tRR tA tB FIGURE 8. tRR TEST CIRCUIT L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L R + VDD FIGURE 9. tRR WAVEFORMS AND DEFINITIONS 130 1M DUT VAVL 12V Q2 130 CURRENT SENSE VDD IL IV IL 12V t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 4 RHRP6120CC TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE A OP Q H1 D E1 45o D1 TERM. 4 E A1 INCHES SYMBOL A A1 b b1 c D D1 E E1 e e1 MIN 0.170 0.048 0.030 0.045 0.014 0.590 0.395 MAX 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 TYP 0.200 BSC 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112 MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.36 14.99 10.04 MAX 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 TYP 5.08 BSC 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES 3, 4 2, 3 2, 3, 4 5 5 6 2 - L1 b1 b c L 60o 1 2 3 e e1 LEAD 1. ANODE 1 LEAD 2. CATHODE LEAD 3. ANODE 2 TERM. 4. CATHODE J1 H1 J1 L L1 OP Q NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 1-93. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 5 |
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