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RF3158
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product Package Style: Module (6mmx6mm)
HB RFIN 1
18 HB RFOUT
Features
Linear EDGE and GSM Operation PowerStar(R) GSM/GPRS Power Control Digital Band Select Enables a Single PA Lineup Single Supply Voltage; Requires no External Reference Voltage Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Low Power Mode for Reduced EDGE Current Analog Bias Control allows External Optimization of EDGE Current Compact 6mmx6mm Package
BAND SEL 2 TX EN 3 VBATT 4 VMODE 5 VRAMP 6 LB RFIN 7 12 LB RFOUT Integrated Power Control
Functional Block Diagram
Product Description
The RF3158 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 6mmx6mm laminate module with a protective plastic overmold. Ordering Information
RF3158 Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack Fully Assembled Evaluation Board
Applications
Quad-Band GSM/EDGE Handsets GSM/EDGE Transmitter Lineups Portable Battery-Powered Equipment GSM850/EGSM900/DCS/ PCS Products GPRS Class 12 Compatible Products Mobile EDGE/GPRS Data Products
RF3158PCBA-41X
Optimum Technology Matching(R) Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3158
Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Power Control Voltage (VRAMP) Band Select TX Enable VMODE RF - Input Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature
Rating
-0.5 to +6.0 -0.5 to +3.0 3.0 3.0 3.0 12.0 50 10:1 -20 to +85 -55 to +150
Unit
V V V V V dBm % C C
The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Caution! ESD sensitive device.
Parameter
VRAMP Power Control (GMSK Mode)
Power Control Range VRAMP Input Current
Min.
Specification Typ.
Max.
Unit
Condition
0.30
2.10 40
V uA VRAMP =VRAMP,MAX
VRAMP Bias Control (8PSK Mode)
High Bias Mode Low Bias Mode VRAMP Input Current 2.1 0.4 2.15 0.6 2.0 40 V V uA High Bias Mode Low Bias Mode VRAMP =VRAMP,MAX 8PSK Mode GMSK Mode
VMODE Switch
VMODE "HIGH" VMODE "LOW" VMODE Input Current 1.5 0 -10 1.5 0 -10 1.5 0 -10 3.2 3.0 Off Current 3.6 0.7 10 4.5 4.8 10 0.7 10 0.7 10 V V uA V V uA V V uA V V uA Performance specified Functional with performance degraded TX_EN low PA "ON" PA "OFF" High Band (DCS/PCS) Low Band (GSM850/GSM900)
Band Switch
BAND_SEL "HIGH" BAND_SEL "LOW" BAND_SEL Input Current
TX_EN Switch
TX_EN "HIGH" TX_EN "LOW" TX_EN Input Current
Overall Power Supply
VCC Range
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A2 DS070615
RF3158
Parameter
RF Impedance
LB_RF IN LB_RF OUT HB_RF IN HB_RF OUT 50 50 50 50 Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25 C, VCC =3.6V, VMODE ="Low", Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154s, Over Pin Range, BAND_SEL="Low", TX_EN="High" 824 +1.0 34.5 32.5 -10 Power Droop Power Control Slope -0.25 300 200 60 Total Efficiency (PAE) Output Noise Power Forward Isolation 2f0 Harmonics 3f0 Harmonics Fundamental Cross Band Coupling 2f0, 3f0 Cross Band Coupling All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 47 50 -87 -82 -25 -7 -10 0 -18 -36 2.5:1 0.25 +4.0 35.0 849 +6.5 MHz dBm dBm dBm dBm dB dB/V dB/V dB/V % dBm dBm dBm dBm dBm dBm dBm Temp=25 C, VCC =3.6V, VRAMP =VRAMP,MAX Temp=85 C, VCC =3.2V, VRAMP =VRAMP,MAX VRAMP =0.3V POUT <34.5dBm, 50% Duty Cycle, Pulse Width=2308s Maximum Slope, POUT =0dBm to 5dBm Maximum Slope, POUT =5dBm to 15dBm Maximum Slope, POUT >15dBm VRAMP =VRAMP,MAX RBW=100kHz, 869MHz to 894MHz, f0 =849MHz, POUT <+34.5dBm TX_EN=0V, VRAMP =0.3V, PIN =+6dBm POUT <34.5dBm POUT <34.5dBm Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. POUT <34.5dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, PIN =+4dBm, set VRAMP where POUT <34.5dBm into 50 load Set VRAMP where POUT <34.5dBm into 50 load, no damage or permanent degradation to part.
Min.
Specification Typ.
Max.
Unit
Condition
Cellular 850MHz Band GMSK Mode
Operating Frequency Range Input Power Range, PIN Maximum Output Power
Output Load VSWR Ruggedness
10:1
Note: VRAMP,MAX =2.1V
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3158
Parameter Min. Specification Typ. Max. Unit Condition
Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25 C, VCC =3.6V, VRAMP =2.1V, VMODE ="High", Freq=824MHz to 849MHz, 25% Duty Cycle, Pulse Width=1154s, BAND_SEL="Low", TX_EN="High" 824 28.5 29 849 MHz dBm High Bias mode (VRAMP =2.1V)
Cellular 850MHz Band 8PSK Mode
Operating Frequency Range Maximum Output Power Meeting EVM and ACPR Spectrum
26.5 13.5 Low Power Current Consumption Total Efficiency (PAE) 17 350 20 2.0 Gain Gain Temperature Coefficient EVM RMS 28.0 30.0 -0.037 -0.025 3.5 5.0 ACPR and Spectrum Mask ACPR and Spectrum Mask, Extreme Conditions -57 -63 -57 -63 Output Noise Power 2f0 Harmonics 3f0 Harmonics Fundamental Cross Band Coupling 2f0, 3f0 Cross Band Coupling All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 -82 -80 -7 -10 0 -18 -36 2.5:1 32.0 575
dBm dBm mA % % dB dB/K dB/K % % dBc dBc dBc dBc dBm dBm dBm dBm dBm dBm
Temp=-20C to +85C, VCC =3.2V, High Bias mode (VRAMP =2.1V) Temp=-20C to +85C, VCC =3.2V, Low Bias mode (VRAMP =0.6V) POUT <13.5dBm, Low Bias mode (VRAMP =0.6V) POUT =28.5dBm, High Bias mode (VRAMP =2.1V) POUT =13.5dBm, Low Bias mode (VRAMP =0.6V) Temp=+25C to +85C, VCC =3.6V Temp=-20C to +25C, VCC =3.6V POUT <28.5dBm POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C At 400kHz in 30kHz BW, POUT <28.5dBm At 600kHz in 30kHz BW, POUT <28.5dBm At 400kHz in 30kHz RBW, POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C. At 600kHz in 30kHz RBW, POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C. RBW=100kHz, 869MHz to 894MHz, f0 =849MHz, POUT <+28.5dBm POUT <28.5dBm POUT <28.5dBm Measured at HB_RFOUT pin, POUT <28.5dBm at LB_RFOUT pin. Measured at HB_RFOUT pin, POUT <28.5dBm at LB_RFOUT pin. POUT <28.5dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, set PIN where POUT <28.5dBm into 50 load.
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A2 DS070615
RF3158
Parameter Min. Specification Typ. Max. Unit Condition
Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25 C, VCC =3.6V, VMODE ="Low", Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154s, Over Pin Range, BAND_SEL="Low", TX_EN="High" 880 +1.0 34.5 32.5 -10 Power Droop Power Control Slope -0.25 300 200 60 Total Efficiency (PAE) Output Noise Power 47 50 -83 -87 Forward Isolation 2f0 Harmonics 3f0 Harmonics Fundamental Cross Band Coupling 2f0, 3f0 Cross Band Coupling All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 -80 -83 -25 -7 -10 0 -18 -36 2.5:1 0.25 +4.0 35 915 +6.5 MHz dBm dBm dBm dBm dB dB/V dB/V dB/V % dBm dBm dBm dBm dBm dBm dBm dBm Temp=25C, VCC =3.6V, VRAMP =VRAMP,MAX Temp=+85oC, VCC =3.2V, VRAMP =VRAMP,MAX VRAMP =0.3V POUT <34.5dBm, 50% Duty Cycle, Pulse Width=2308s Maximum Slope, POUT =0dBm to 5dBm Maximum Slope, POUT =5dBm to 15dBm Maximum Slope, POUT >15dBm VRAMP =VRAMP,MAX RBW=100kHz, 925MHz to 935MHz, f0 =915MHz, POUT <+34.5dBm RBW=100kHz, 935MHz to 960MHz, f0 =915MHz, POUT <+34.5dBm TX_EN=0V, VRAMP =0.3V, PIN =+6dBm POUT <34.5dBm POUT <34.5dBm Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. Measured at HB_RFOUT pin, POUT =34.5dBm at LB_RFOUT pin. POUT <34.5dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, PIN =+4dBm, set VRAMP where POUT <34.5dBm into 50 load Set VRAMP where POUT <34.5dBm into 50 load, no damage or permanent degradation to part.
EGSM 900MHz Band GMSK Mode
Operating Frequency Range Input Power Range, PIN Maximum Output Power
Output Load VSWR Ruggedness
10:1
Note: VRAMP,MAX =2.1V
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3158
Parameter Min. Specification Typ. Max. Unit Condition
Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25 C, VCC =3.6V, VMODE ="High", VRAMP =2.1V, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154s, BAND_SEL="Low", TX_EN="High" 880 28.5 29 915 MHz dBm High Bias mode (VRAMP =2.1V)
EGSM 900MHz Band 8PSK Mode
Operating Frequency Range Maximum Output Power Meeting EVM and ACPR Spectrum
26.5 13.5 Low Power Current Consumption Total Efficiency (PAE) 16.5 350 22.0 2.0 Gain Gain Temperature Coefficient EVM RMS 28.0 29.5 -0.037 -0.026 3.5 5.0 ACPR and Spectrum Mask ACPR and Spectrum Mask, Extreme Conditions -57 -63 -57 -63 Output Noise Power -83 -83 2f0 Harmonics 3f0 Harmonics Fundamental Cross Band Coupling 2f0, 3f0 Cross Band Coupling All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 -82 -80 -7 -10 0 -18 -36 2.5:1 32.0 575
dBm dBm mA % % dB dB/K dB/K % % dBc dBc dBc dBc dBm dBm dBm dBm dBm dBm dBm
Temp=-20C to +85C, VCC =3.2V, High Bias mode (VRAMP =2.1V) Temp=-20C to +85C, VCC =3.2V, Low Bias mode (VRAMP =0.6V) POUT <13.5dBm, Low Bias mode (VRAMP =0.6V) POUT =28.5dBm, High Bias mode (VRAMP =2.1V) POUT =13.5dBm, Low Bias mode (VRAMP =0.6V) Temp=+25C to +85C, VCC =3.6V Temp=-20C to +25C, VCC =3.6V POUT <28.5dBm POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C At 400kHz in 30kHz BW, POUT <28.5dBm At 600kHz in 30kHz BW, POUT <28.5dBm At 400kHz in 30kHz RBW. POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C. At 600kHz in 30kHz RBW. POUT <26.5dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C. RBW=100kHz, 925MHz to 935MHz, f0 =915MHz, POUT <+28.5dBm RBW=100kHz, 935MHz to 960MHz, f0 =915MHz, POUT <+28.5dBm POUT <28.5dBm POUT <28.5dBm Measured at HB_RFOUT pin, POUT <28.5dBm at LB_RFOUT pin. Measured at HB_RFOUT pin, POUT <28.5dBm at LB_RFOUT pin. POUT <28.5dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, set PIN where POUT <28.5dBm into 50 load.
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A2 DS070615
RF3158
Parameter Min. Specification Typ. Max. Unit Condition
Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25 C, VCC =3.6V, VMODE ="Low", Freq=1710MHz to 1785MHz, 25% Duty Cycle, Pulse Width=1154s, PIN =Over Range, BAND_SEL="High", TX_EN="High" 1710 2.0 32 30 -10 Power Droop Power Control Slope -0.25 350 250 100 Total Efficiency (PAE) Output Noise Power Forward Isolation 2f0 Harmonics 3f0 Harmonics All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability Output Load VSWR Ruggedness Note: VRAMP,MAX =2.1V 6:1 10:1 45 49 -80 -79 -32 -7 -7 -36 2.5:1 0.25 5.0 33 1785 8.5 MHz dBm dBm dBm dBm dB dB/V dB/V dB/V % dBm dBm dBm dBm dBm Temp=25C, VCC =3.6V, VRAMP =VRAMP,MAX Temp=+85oC, VCC =3.2V, PIN >3dBm, VRAMP =VRAMP,MAX VRAMP =0.3V POUT <32dBm, 50% Duty Cycle, Pulse Width=2308s Maximum Slope, POUT =-5dBm to 0dBm Maximum Slope, POUT =0dBm to +10dBm Maximum Slope, POUT >10dBm VRAMP =VRAMP,MAX RBW=100kHz, 1805MHz to 1880MHz, f0 =1785MHz, POUT <32dBm TX_EN=0V, VRAMP =0.3V, PIN =+6dBm POUT <32dBm POUT <32dBm POUT <32dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, PIN =+5dBm, set VRAMP where POUT <32dBm into 50 load Set VRAMP where POUT <32dBm into 50 load, no damage or permanent degradation to part.
DCS 1800MHz Band GMSK Mode
Operating Frequency Range Input Power Range, PIN Maximum Output Power
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
7 of 26
RF3158
Parameter Min. Specification Typ. Max. Unit Condition
Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25 C, VCC =3.6V, VMODE ="High", VRAMP =2.1V, Freq=1710MHz to 1785MHz, 25% Duty Cycle, Pulse Width=1154s, BAND_SEL="High", TX_EN="High" 1710 28.0 1785 MHz dBm High Bias mode (VRAMP =2.1V)
DCS 1800MHz Band 8PSK Mode
Operating Frequency Range Maximum Output Power Meeting EVM and ACPR Spectrum
26.0 12.5 Low Power Current Consumption Total Efficiency (PAE) Gain Gain Temperature Coefficient EVM RMS 18.5 32.0 350 23.0 1.6 34.5 -0.050 -0.040 3.5 5.0 ACPR and Spectrum Mask ACPR and Spectrum Mask, Extreme Conditions -57 -63 -57 -63 Output Noise Power 2f0 Harmonics 3f0 Harmonics All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 -83 -81 -7 -7 -36 2.5:1 37.0 550
dBm dBm mA % % dB dB/K dB/K % % dBc dBc dBc dBc dBm dBm dBm dBm
Temp=-20C to +85C, VCC =3.2V, High Bias mode (VRAMP =2.1V) Temp=-20C to +85C, VCC =3.2V, Low Bias mode (VRAMP =0.8V) POUT <12.5dBm, Low Bias mode (VRAMP =0.8V) POUT =28dBm, High Bias mode (VRAMP =2.1V) POUT =12.5dBm, Low Bias mode (VRAMP =0.8V) Temp=+25C to +85C, VCC =3.6V Temp=-20C to +25C, VCC =3.6V POUT <28dBm POUT <26dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C At 400kHz in 30kHz BW, POUT <28dBm At 600kHz in 30kHz BW, POUT <28dBm At 400kHz in 30kHz RBW, POUT <26dBm, Temp=-20C to +85C, VCC =3.2V to 4.5V At 600kHz in 30kHz RBW, POUT <26dBm, Temp=-20C to +85C, VCC =3.2V to 4.5V RBW=100kHz, 1805MHz to 1880MHz, f0 =1785MHz, POUT <28dBm, POUT <28dBm POUT <28dBm POUT <28dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, set PIN where POUT <28.0dBm into 50 load.
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A2 DS070615
RF3158
Parameter Min. Specification Typ. Max. Unit Condition
Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25 C, VCC =3.6V, VMODE ="Low", Freq=1850MHz to 1910MHz, 25% Duty Cycle, Pulse Width=1154s, PIN =Over Range, BAND_SEL="High", TX_EN="High" 1850 2.0 32 30 -10 Power Droop Power Control Slope -0.25 350 250 100 Total Efficiency (PAE) Output Noise Power Forward Isolation 2f0 Harmonics 3f0 Harmonics All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability Output Load VSWR Ruggedness Note: VRAMP,MAX =2.1V 6:1 10:1 45 49 -81 -79 -32 -7 -7 -36 2.5:1 0.25 5.0 33 1910 8.5 MHz dBm dBm dBm dBm dB dB/V dB/V dB/V % dBm dBm dBm dBm dBm Temp=25C, VCC =3.6V, VRAMP =VRAMP,MAX Temp=+85oC, VCC =3.2V, PIN >3dBm, VRAMP =VRAMP,MAX VRAMP =0.3V POUT <32dBm, 50% Duty Cycle, Pulse Width=2308s Maximum Slope, POUT =-5dBm to 0dBm Maximum Slope, POUT =0dBm to +10dBm Maximum Slope, POUT >10dBm VRAMP =VRAMP,MAX RBW=100kHz, 1930MHz to 1990MHz, f0 =1910MHz, POUT <32dBm TX_EN=0V, VRAMP =0.3V, PIN =+6dBm POUT <32dBm POUT <32dBm POUT <32dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, PIN =+5dBm, set VRAMP where POUT <32dBm into 50 load Set VRAMP where POUT <32dBm into 50 load, no damage or permanent degradation to part.
PCS 1900MHz Band GMSK Mode
Operating Frequency Range Input Power Range, PIN Maximum Output Power
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
9 of 26
RF3158
Parameter Min. Specification Typ. Max. Unit Condition
Nominal Conditions (unless otherwise stated): Input and Output=50, Temp=25C, VCC =3.6V, VMODE ="High", VRAMP =2.1V, Freq=1850MHz to 1910MHz, 25% Duty Cycle, Pulse Width=1154s, BAND_SEL="High", TX_EN="High" 1850 28.0 1910 MHz dBm High Bias mode (VRAMP =2.1V)
PCS 1900MHz Band 8PSK Mode
Operating Frequency Range Maximum Output Power Meeting EVM and ACPR Spectrum
26.0 12.5 Low Power Current Consumption Total Efficiency (PAE) Gain Gain Temperature Coefficient EVM RMS 18.5 32.0 350 24.0 1.6 34.5 -0.045 -0.035 3.5 5.0 ACPR and Spectrum Mask ACPR and Spectrum Mask, Extreme Conditions -57 -63 -57 -63 Output Noise Power 2f0 Harmonics 3f0 Harmonics All Other Non-harmonic Spurious Input VSWR Output Load VSWR Stability 6:1 -84 -82 -7 -7 -36 2.5:1 37.0 550
dBm dBm mA % % dB dB/K dB/K % % dBc dBc dBc dBc dBm dBm dBm dBm
Temp=-20C to +85C, VCC =3.2V, High Bias mode (VRAMP =2.1V) Temp=-20C to +85C, VCC =3.2V, Low Bias mode (VRAMP =0.8V) POUT <12.5dBm, Low Bias mode (VRAMP =0.8V) POUT =28dBm, High Bias mode (VRAMP =2.1V) POUT =12.5dBm, Low Bias mode (VRAMP =0.8V) Temp=+25C to +85C, VCC =3.6V Temp=-20C to +25C, VCC =3.6V POUT <28dBm POUT <26dBm, VCC =3.2V to 4.5V, Temp=-20C to +85C At 400kHz in 30kHz BW, POUT <28dBm At 600kHz in 30kHz BW, POUT <28dBm At 400kHz in 30kHz RBW, POUT <26dBm, Temp=-20C to +85C, VCC =3.2V to 4.5V At 600kHz in 30kHz RBW, POUT <26dBm, Temp=-20C to +85C, VCC =3.2V to 4.5V RBW=100kHz, 1930MHz to 1990MHz, f0 =1910MHz, POUT <28dBm POUT <28dBm POUT <28dBm POUT <28dBm Over POUT Range Spurious<-36dBm, RBW=3MHz, set PIN where POUT <28.0dBm into 50 load.
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7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A2 DS070615
RF3158
Pin 1 Function HB_RFIN Description
RF input to the high-band PA. There is a 100 shunt resistor, before the DC block inside the part, which sets the input impedance for the HB PA. When connected to a DC coupled transceiver, an external DC blocking capacitor is required.
Interface Schematic
HB_RFIN External DC Block RF3158 PAM DC Block
100
2
BAND_SEL
Digital input enables either the low band or high band amplifier die within the module. A logic low selects Low Band (GSM850/EGSM900), a logic high selects High Band (DCS1800/PCS1900). This pin is a high impedance CMOS input with no pull-up or pull-down resistors. Digital input enables or disables the internal circuitry. When disabled, the module is in the OFF state and draws virtually zero current. This pin is a high impedance CMOS input with no pull-up or pull-down resistors.
BAND SEL TX EN
GSM CTRL
DCS CTRL
3
TX_EN
VBATT
TX EN
TX ON
4 5
VBATT VMODE
6
VRAMP
7
LB_RFIN
Main DC power supply for all circuitry in the RF3158. Traces to this pin will have high current pulses during operation so proper decoupling and routing to handle this should be observed. Digital input which internally adjusts settings to optimize amplifier performance for saturated or linear mode. A logic low selects saturated mode for GMSK modulation. A logic high selects linear mode for 8PSK modulation. This pin is a high impedance CMOS input with no pull-up or pull-down resistors. In GMSK mode, the voltage on this pin controls the output power by varying the regulated collector voltage on the amplifiers. In EDGE mode, the voltage on this pin varies the regulated base bias of the amplifiers. An internal 300kHz filter reduces switching ORFS resulting from transitions between DAC steps. Most systems will have no need for external VRAMP filtering. This pin provides an impedance of approximately 60k. RF input to the low-band PA. It is DC-blocked within the part.
300 kH z VRAMP
DC Block LB_RFIN RF3158 PAM
8 10 11 12
GND GND GND LB_RFOUT
Ground. Ground. Ground. RF output from the low-band PA. It is DC-blocked within the part.
DC Block LB_RFOUT RF3158 PAM
13 14 15 16 17 18
GND GND GND GND GND HB_RFOUT
Ground. Ground. Ground. Ground. Ground. RF output from the high-band PA. It is DC-blocked within the part.
DC Block HB_RFOUT RF3158 PAM
19
GND
Ground.
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF3158
Pin 20 22 23 Function GND GND GND Description
Ground. Ground. Main ground pad in center of part. This pad should be tied to the main ground plane with as little loss as possible for optimum linearity.
Interface Schematic
Dual Mode Operation
MODE GSM EDGE VMODE
Low FIXED
RF INPUT
Ramped burst from Variable Gain AmpliHigh (Normal) fier or Source (GSM Burst Ramp ConLow (Isolation) trol) Note: When VMODE is low (GMSK mode), the voltage on VRAMP is used to regulate the PA collector voltage which directly controls the output power. When VMODE is high (8PSK mode), the PA collector voltage is regulated to 3.6V, and the supply for the PA base bias can be adjusted via the VRAMP pin to optimize current drain for low or high power ranges. In addition, in 8PSK mode, the first stage of the low band PA is bypassed to decrease gain, but in high band, the PA operates with all stages.
High
VRAMP Analog voltage that proportionally regulates collector voltage. Controls output power level. (GSM Burst Ramp Control) Analog voltage that proportionally regulates base bias. Controls amplifier bias current.
TX ENABLE
High (Normal) Low (Isolation)
Pin Out
HB_RFIN BAND_SEL TX_EN 1 2 3 22 20 19 18 17 16 HB_RFOUT
VBATT
4
23 MODULE GND
15
VMODE VRAMP LB_RFIN
5 6 7
14 13 12 LB_RFOUT
8
10
11
Note: view from top of part. Pins 8, 10, 11, 13, 14, 15, 16, 17, 19, 20, 22 are connected to pin 23 on the module. It is recommended that these pins be connected to module ground on the PCB as well.
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Rev A2 DS070615
RF3158
Package Drawing
1.40 1.25
6.00 0.10
6.00 0.10
Shaded area represents pin 1.
0.440 0.050
Dimensions in mm.
0.100 TYP 0.675 1.000 TYP
1.725 TYP 2.600 TYP 4.575 5.025 TYP
Note: viewed from bottom of the part.
Rev A2 DS070615
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0.000 0.600 TYP 0.975 1.400 TYP 2.275 TYP 4.200 TYP 4.575 5.025 5.900 TYP
5.400 TYP 5.100 TYP 4.600 TYP 3.800 TYP 3.325 TYP 2.675 TYP 1.800 TYP 1.000 TYP 0.675 TYP 0.600 TYP 0.000
5.400 TYP 5.900 TYP 5.325 TYP 5.000 TYP 4.200 TYP 3.400 TYP 2.600 TYP 2.200 TYP 1.400 TYP 0.900 TYP 0.100 TYP
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RF3158
Theory of Operation
Overview The RF3158 is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment, and other applications operating in the 824MHz to 915MHz and 1710MHz to 1910MHz bands. The RF3158 is a high power, dual mode GSM/EDGE, power amplifier with PowerStar(R) integrated power control. The integrated power control circuitry provides reliable control of saturated power by a single analog voltage (VRAMP). This VRAMP can be driven directly from a DAC output. PowerStar(R)'s predictable power versus VRAMP relationship allows single-point calibration in each band. Single point calibration enables handset manufacturers to achieve simple and efficient phone calibration during production. The RF3158 also features an integrated saturation detection circuit, which is an industry first for standard PA module products. The saturation detection circuit automatically monitors battery voltage and adjusts the power control loop to reduce transient spectrum degradation that would otherwise occur at low battery voltage conditions. Prior to the implementation of the saturation detection circuit, handset designers were required to adjust the ramp voltage within the system software. RFMD's saturation detection circuit reduces handset design time and ensures robust performance over broad operating conditions. The design of a dual mode power amplifier module is a challenging process involving many performance tradeoffs and compromises to allow it to perform well in both saturated and linear operating regions. This is most noticeable in the RF3158 GSM efficiency. A GSM only part can have its load line (output match) adjusted for maximum efficiency. In a dual mode module, tuning of the load line must be balanced between GSM efficiency and EDGE linearity. The result is slightly lower GSM efficiency than a single mode (saturated only) power amplifier module. In addition, the RF3158 uses a special GaAs Heterojunction Bipolar Transistor (HBT) process technology which is not used in the most efficient GSM only power amplifiers. The special HBT process allows the RF3158 to provide excellent linear performance, Error Vector Magnitude (EVM), and Adjacent Channel Power Ratio (ACPR), yet maintain competitive GSM efficiency. Modes of Operation The RF3158 is a dual mode saturated GSM and linear EDGE Power Amplifier. In GSM mode, the RF3158 is a traditional PowerStar(R) module, which means that the output power is controlled by the VRAMP voltage. In EDGE mode, the RF3158 acts as a gain block where the output power is controlled by the input RF power. The input RF drive level is reduced from GSM mode to prevent saturation and limit output power. Figure 1 shows the Power Amplifier operating regions in GSM and EDGE mode.
P1dB 35dBm 29dBm
Output Power
GSM GMSK
EDGE 8-PSK
Linear Operation
Saturated Operation
Input Power
Figure 1. RF3158 Power Amplifier Operating Regions in GSM/EDGE Mode
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Rev A2 DS070615
RF3158
GSM applications typically require an input RF drive that is 3dB to 4dB higher than the 1dB compression point. GSM mode involves GMSK modulation, which is a constant envelope modulation and is not sensitive to amplitude non-linearities caused by the PA. Since the useful data in the GMSK modulation is entirely included in the phase, the amplifier may be operated in saturated mode (deep class AB) for optimum efficiency. Saturated output power for the RF3158 is controlled by the voltage on the VRAMP pin. Linear EDGE applications require a linear power amplifier to transfer 8PSK modulation with minimal distortion. Since an 8PSK signal has information encoded in both amplitude and phase, the use of a saturated PA is not trivial and requires a more complex system. The traditional way to design a transmitter that is required to convey both phase and amplitude modulation is through the use of a linear power amplifier (Class A). In RF3158, the bias is held at a constant level such that the device is operating in linear region, and the output RF level is directly proportional to the input RF level. The RF3158 is used as a linear amplifier by fixing the voltage on the VRAMP pin and reducing the input power to the PA such that the device enters a linear operational region. Output power is controlled by applying the proper amplitude signal to the RFIN Pin. The voltage on the VRAMP pin controls bias current and can be fixed at various levels to optimize current consumption for the desired output power range. GSM (Saturated) Mode In GSM mode, RF3158 operates as a traditional PowerStar(R) module. The incorporated control loop regulates the collector voltage of the amplifiers while the stages are held at a constant bias. The basic circuit diagram is shown in Figure 2.
VBATT
V RAMP
+
3 dB BW 300 kHz
-
+ H(s)
Saturation Detector V CC
RF IN
RF OUT
TX ENABLE
Figure 2. RF3158 Basic Circuit Diagram By regulating the collector voltage (VCC), the stages are held in saturation across all power levels. As VCC is decreased, output power decreases as described by Equation 1. The equation shows that load impedance affects output power, but to a lesser degree than VCC supply variations. Since the RF3158 regulates VCC, the dominant cause of power variation is eliminated.
P OUT
dBm
( 2 V CC - V SAT ) 2 = 10 log ------------------------------------------8 Rl 10 - 3
(Eq. 1)
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RF3158
RF3158 power is ramped up and down through the VRAMP control voltage which in turn controls the collector voltage of the amplifier stages. The RF signal applied at the RFIN pin must be a constant amplitude signal and should be high enough to saturate the amplifier in the GSM mode. The input power (PIN) range is indicated in the specifications. Power levels below this range will result in reduced maximum output power and the potential for more variation of output power over extreme conditions. Higher input power is unnecessary and will require more current in the circuitry driving the power amplifier and will increase the minimum output power of the RF3158. The saturation detector circuit monitors the VBATT and VCC voltages and adjusts the power control loop to prevent the seriespass FET regulator from entering saturation. If the VCC regulator were to saturate, the response time would increase dramatically. This is undesirable because the VCC regulator must accurately follow the burst ramp up or ramp down applied to the VRAMP pin, or the transient spectrum will degrade. EDGE (Linear) Mode In EDGE mode, VCC is fixed and the bias currents are controlled by VRAMP . The low band gain is significantly reduced from GMSK mode in order to improve receive band noise performance. The RF3158 then operates as a linear amplifier where output power is directly controlled by input power. The RF signal applied to the RFIN pin must be accurately controlled to produce the desired output amplitude and burst ramping. The RFIN power must be maintained so that the amplifier is operating in its linear region. If the input drive is too high, the amplifier will begin to saturate causing the ACPR and EVM performance to degrade. The most sensitive of these on the RF3158 is the +/-400kHz offset ACPR. As the amplifier approaches saturation, this will be the first parameter to show significant degradation. During production calibration of a system containing the RF3158, the PA gain and other parameters must be determined. After that, the RF3158 functions as a fixed gain block while the system adjusts input power such that the output from the transmitter meets the desired system specifications. Since the RF3158 operates as a gain block in EDGE mode, gain variation over extreme conditions must be considered when determining the output power that a specific input power will produce. Typical Gain versus Temperature is shown in Figure 3. Special attention must be given to ensure that the output power of the PA does not go higher than the maximum linear output that the PA can provide with acceptable EVM and ACPR performance.
Typical EDGE Gain over Temperature
High Bias Mode, Average over Frequency
38.0 37.0 36.0 35.0
Linear Gain (dB)
34.0 33.0 32.0 31.0 30.0 29.0 28.0 27.0 26.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Low Band Gain High Band Gain
Temperature (C)
Figure 3. EDGE Gain over Temperature
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Rev A2 DS070615
RF3158
A large portion of the total current in a linear amplifier is necessary to bias the transistors so that the output remains linear. In an EDGE system where there are a range of output power levels used (PCLs), an amplifier biased to operate at a high power will be very inefficient at low power levels. Conversely, an amplifier biased to operate at a low power will not be linear at high power levels. The maximum linear power of an amplifier is determined during design, but can be adjusted to some extent by the quiescent current through the amplifier transistors. The RF3158 incorporates an analog bias control in EDGE mode. This allows the system designer to reduce quiescent current in the power amplifier when operating at lower output power levels, resulting in improved efficiency. Low bias mode for the RF3158 is basically a specific setting of the analog bias control for which characterization and test data has been collected. In low bias mode the PA can only be operated at or below a specified output power level while maintaining linearity. It is conceivable that a system designer could select a separate bias setting (VRAMP voltage) for each PCL to optimize efficiency across all operating levels. However, as bias changes, so does the gain, linearity, and temperature response. Balancing all these parameters across extreme operating conditions and process variation would likely be impossible in a volume production environment. At minimum, careful system characterization and planning would be required. Power Ramping and Timing The RF3158 should be powered on according to the Power-On Sequence provided in the datasheet. The power on sequence is designed to prevent operation of the amplifier under conditions that could cause damage to the device, or erratic operation. In the Power-On Sequence, there are some set-up times associated with the control signals of the RF3158. The most important of these is the settling time between TXEN going high and when VRAMP can begin to increase. This time is often referred to as the "pedestal" and is required so that the internal power control loop and bias circuitry can settle after being turned on. The RF3158 requires at least 1.5s or two quarter bit times for proper settling of the power control loop. The diagram below is the ETSI time mask for a single GSM timeslot.
The VRAMP waveform used with the RF3158 must be created such that the output power falls into this power versus time mask. The ability to ramp the RF output power to meet ETSI switching transient and time mask requirements partially depends upon the predictability of output power versus VRAMP response of the power amplifier. The PowerStar(R) control in the RF3158 is very capable of meeting switching transient requirements with the proper raised Cosine waveform applied to the VRAMP input. The ramping waveform on VRAMP must not start until after TX_EN is asserted. A ramp of about 12us is required to control switching transients at high power levels.
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RF3158
The VRAMP voltage range should be limited to min and max values in the specifications to avoid damage or undesirable operation. At some voltage below 0.35V, the CMOS controller switches off and turns off the PA. The effect of this is a discontinuity in the response curve. In order to guarantee minimum switching transients, it is recommended that the minimum ramp voltage be set slightly above the voltage where this discontinuity occurs (See Figure 3). The VRAMP voltage at which the discontinuity occurs is unique to the design of the part and does not shift significantly across process. Figure 3 shows the power versus VRAMP response curve for two parts which represent typical process variation of the discontinuity. As the VRAMP voltage approaches its maximum, the linear regulator in the CMOS saturates, the output power reaches its maximum level, and the VRAMP versus Output Power curve levels out. The saturation point of the linear regulator is directly proportional to the VBATT supply voltage applied. The VRAMP voltage can be increased above the saturation level, but the PA will not produce any higher output power. It is not recommended to apply a VRAMP voltage above the absolute maximum specification, as the part could be damaged. When the FET pass-device in the linear regulator saturates, the response time of the regulated voltage slows significantly. If the control voltage changes (as in ramp-down) the saturated linear regulator does not react fast enough to follow the ramp-down curve. The result is a discontinuity in the output power ramp and degraded switching transients. This usually occurs at low VBATT levels where the regulated VCC voltage is very near the supply voltage. The RF3158 incorporates a saturation detection circuit which senses if the FET pass-device is entering saturation and reduces VCC to prevent it. This relieves the requirement of the transceiver controller to adjust the maximum VRAMP when the battery voltage is low.
Low Band POUT versus VRAMP
824MHz, 3.6V, PIN=2dBm
35.0
25.0
Output Power (dBm)
15.0
5.0
-5.0
-15.0
-25.0
Sample 1 Sample 2
-35.0 0.0 0.5 1.0 1.5 2.0 2.5
VRAMP (V)
Figure 4. Output Power versus VRAMP
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Rev A2 DS070615
RF3158
Design Considerations There are several key factors to consider in the implementation of a mobile phone transmitter solution using the RF3158: * System Efficiency The RF output match can be designed to improve system efficiency by presenting a non 50 load. Output matching circuits for the RF3158 should be a compromise between system efficiency and power as well as EDGE linearity. Optimal matching for GSM mode alone may degrade the linear performance beyond system specifications. * Power Variation due to Supply Voltage Output power does not vary due to supply voltage under normal operating conditions. By regulating the collector voltage to the PA the voltage sensitivity is essentially eliminated. This covers most cases where the PA will be operated. However, as the battery discharges and VBATT approaches its lower operating limit, the output power from the PA will start to drop. This cannot be avoided as a certain supply voltage is required to produce full output power. System specifications must allow for this power decrease. Switching Transients due to low battery conditions are reduced by the saturation detection circuit in RF3158. The saturation detection circuit consists of a feedback loop which detects FET saturation. As the FET approaches saturation, the circuit adjusts the VCC voltage in order to ensure minimum switching transients. The saturation detection circuit is integrated into the CMOS controller and requires no additional input from the user. * Power variation due to Temperature RF3158 output power variation due to temperature is largest at low power levels and decreases at the upper power levels. This follows the ETSI specification limits which allow a larger tolerance over extreme conditions at low power levels. Since output power is controlled by an analog input, factors other than the power amplifier will have an effect on total system power variation. The entire system containing the RF3158 should be tested to determine whether compensation is necessary. At high temperatures and low battery voltages, the PA cannot support as high of an output power. In this condition, increasing VRAMP will not provide more output power, so compensation may not provide the intended result. * Noise Power The bias point of the RF3158 is kept constant and the gain in the first stage is always high. This has the effect of maintaining a consistent noise power which does not increase at reduced output power levels. For that reason, noise power is at its highest when VRAMP is at its maximum. The RF3158 does not create enough noise in the receive band to cause system receive band noise power failures, but it may amplify noise from other sources. Care must be taken to prevent noise from entering the power amplifier. * Loop Stability and Loop Bandwidth Variation across Power Levels The design of a proper power control loop involves trade-offs affecting stability, transient spectrum and burst timing. In non-PowerStar(R) architectures, backing off power causes gain variation which can affect loop bandwidth. In RF3158 the loop bandwidth is determined by VCC regulator bandwidth and does not change over output power. Loop stability is maintained since amplifier bias voltage is constant. * Transient Spectrum Switching transients occur when the up and down power ramps are not smooth enough, or suddenly change shape. If the control slope of a PA has an inflection point within the output power control range, or if the slope is too steep, switching transients will result. In RF3158 all stages are kept constantly biased and the output power is controlled by changing the collector voltage according to Equation 1. Inflection points are eliminated by this design. In addition, the steepness of the power control slope is reduced because VRAMP actively controls output power over a larger voltage range than many other power amplifiers.
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RF3158
* Harmonics Harmonics are natural products of high efficiency, saturated power amplifiers. An ideal, class 'E', saturated power amplifier will produce a perfect square wave. Looking at the Fourier transform of a square wave reveals high harmonic content. Although this is common to all saturated power amplifiers, there are other factors that contribute to harmonic content as well. With many power control methods, a peak power detector is used to rectify and sense forward power. Through the rectification process, there is additional squaring of the waveform resulting in higher harmonics. The RF3158 has no need for the detector diode; therefore, the harmonics coming out of the PA should represent maximum power of the harmonics throughout the transmit chain. This is based on proper harmonic termination of the transmit port. The receive port termination on antenna switch as well as the harmonic impedance from the switch itself will have an impact on harmonics. These terminations should be adjusted to correct problems with harmonics. * Multimode Operation When a GSM TDMA frame contains bursts of different modulation types (EDGE, GSM), a linear EDGE power amplifier must be ramped down, the mode changed, and the power ramped back up again during the guard period between bursts. This requires precise timing of control signals with less room for margin when compared to multiple timeslots with the same modulation. The RF3158 is designed to operate in different modes in adjacent timeslots provided that the control signals are properly applied. The system must be capable of controlling the RF input drive timing separately from the VMODE and VRAMP control signals. Failure to provide the proper timing will produce switching transients.
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Rev A2 DS070615
RF3158
Application Schematic
* DCS/PCS IN BAND SEL TX EN VBATT+ + 1 2 3 4 5 VMODE VRAMP 850/900 IN 6 7 12 850/900 OUT Integrated Power Control 18 DCS/PCS OUT
*DC blocking capacitor required if Transceiver output is DC coupled.
Rev A2 DS070615
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RF3158
Evaluation Board Schematic
50 strip HB RFIN BAND SEL TX EN 1 2 3 VBATT+ + C1 68 F 4 5 6 50 strip 7 12 LB RFOUT Integrated Power Control 18 50 strip HB RFOUT
VMODE R4 0 0402 VRAMP R5 DNP 0402 LB RFIN 50 strip
J2 Red Banana Receptacle VBATT+
J3 Black Banana Receptacle
1234
BAND SEL R1 100 k 0402 VMODE R2 100 k 0402
J1 4-pin Board-Edge Header Block Unused
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Rev A2 DS070615
RF3158
Evaluation Board Layout Board Size 2.0" x 2.0"
Board Thickness 0.046", Board Material Rogers RO4003, Multi-Layer
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RF3158
RF3158 Power Amplifier Simplified Block Diagram of a Single Band
TX_EN VRAMP VBATT
H(s)
RF IN
RF OUT
TX_EN AGC Amplifier
Power On Sequence
GMSK Power On/Off Sequence 3.2V to 4.5V
VBATT
>1.5V High Band
BAND_SEL
<0.7V Low Band
VMODE
<0.7V GMSK Mode >1.5V PA ON
Power On Sequence: 1. Apply VBATT 2. Apply BAND_SEL 3. Apply Low on VMODE 4. Apply minimum VRAMP (~0.3V) 5. Apply TX_EN 6. Ramp VRAMP for desired output power RFIN can be applied at any time. For good transient response it must be applied before power ramp begins.
~0.3V for min Pout Time
TX_EN
2.1V for max Pout
VRAMP
>0s >1.5s
>0s
The Power Down Sequence is the reverse order of the Power On Sequence.
8PSK Power On/Off Sequence
3.2V to 4.5V
VBATT
>1.5V High Band
BAND_SEL
<0.7V Low Band >1.5V 8PSK Mode
VMODE
>2.1V High Bias Mode
Power On Sequence: 1. Apply VBATT 2. Apply BAND_SEL 3. Apply High on VMODE 4. Apply bias control voltage on VRAMP 5. Apply TX_EN 6. Ramp RFIN amplitude for desired output power The Power Down Sequence is the reverse order of the Power On Sequence.
VRAMP
>0.4V Low Bias Mode >1.5V PA ON
TX_EN
Pout = Pin + Gain
RFIN
Time
>0s >1.5s
>0s
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Rev A2 DS070615
RF3158
PCB Design Requirements
PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. PCB Land Pattern Recommendation PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. PCB Metal Land and Solder Mask Pattern
A = 0.64 Sq. Typ. B = 0.64 x 0.54 Typ. C = 0.64 x 0.94 D = 0.45 x 0.57 Typ. 0.62 Typ. E = 0.50 x0.40 Typ. F = 0.55 x 0.57 Typ. G = 0.40 x 0.57 Typ. H = 0.57 x 0.65 Typ. 4.67 Typ.
F G A E E H E E D F G A
A = 0.50 Sq. Typ. B = 0.50 x 0.40 Typ. C = 0.50 x 0.80
Dimensions in mm.
5.30 Typ. 4.45 3.65 2.65 1.65 0.65 0.00 Typ.
A B B C B B A
A
5.55 Typ. 4.75
5.30 Typ. 4.45 Typ. 3.65 Typ. 2.65 Typ. 1.65 Typ.
A B B C B B A
D
4.75 Typ.
0.53
A
0.85 Typ. 0.00 Typ.
0.25 Typ.
0.55 Typ. 0.04 Typ.
0.00 0.55 Typ.
4.75 Typ.
0.00 Typ.
0.85 Typ. 1.45 Typ.
3.05 Typ. 3.65 Typ.
4.45 Typ.
Metal Land Pattern
Solder Mask Pattern
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5.30 Typ.
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RF3158
RoHS* Banned Material Content
RoHS Compliant: Package total weight in grams (g): Compliance Date Code: Bill of Materials Revision: Pb Free Category: Yes 0.123 N/A B e4 Pa r ts Pe r Mi l l i o n (PPM ) Pb 0 584 0 0 0 0 0 Cd 0 0 0 0 0 0 0 Hg 0 0 0 0 0 0 0 Cr VI 0 0 0 0 0 0 0 PB B 0 0 0 0 0 0 0 PB DE 0 0 0 0 0 0 0
B i l l o f Ma te r i a l s Sub str a te Pa ssi ve Co mp o ne nts Di e Mo l di ng Co mp o und Di e Atta ch Ep o x y Wi r e So l de r Pl a ti ng
Thi s R o HS b a nne d ma te r i a l co nte nt de cl a r a ti o n wa s pr e p a r e d so l e l y o n i nfo r ma ti o n, i ncl udi ng a na l y ti ca l da ta , pr o vi de d to R F M D by i ts sup pl i e r s, a nd a p p l i e s to the B i l l o f Ma te r i a l s (B OM ) r e vi si o n no te d * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Pb noted in this material declaration is used in glass or ceramics in electronic components which is an allowed exemption from the RoHS regulations, see Annex to Directive 2002/95/EC and amendment 2005/747/EC.
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Rev A2 DS070615

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