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RF2423
5
Typical Applications * Digital and Analog Communication Systems * GMSK, QPSK, DQPSK, QAM Modulation * Spread-Spectrum Communication Systems * AM, SSB, DSB Modulation * Portable Battery-Powered Equipment
100mW SPREAD-SPECTRUM TRANSMITTER IC
D E S IG N S
.157 .150 .018 .014
Product Description
N E W
The RF2423 is a monolithic integrated transmitter IC capable of universal direct modulation for UHF AM, PM, or compound carriers. The transmitter may be used stand-alone for applications requiring not more than 100mW output power, or may be used to drive a final power amplifier. The maximum output level is 100mW, and is adjustable over a 25dB range by a single positive voltage. This low-cost IC implements differential amplifiers for the modulation inputs, 90 degree carrier phase shift network, carrier limiting amplifiers, two matched doubly-balanced mixers, variable gain summing amplifier for level control, and 100mW linear (class AB) output amplifier.
.010 .004
1
5
MODULATORS AND UPCONVERTERS
.393 .386
.050
.244 .228
.065 .043
8 MAX 0MIN
.050 .016
.010 .007
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS GaAs HBT SiGe HBT
!
Package Style: SOP-16
GaAs MESFET Si CMOS
Features * Single 5V Power Supply * 100mW Output Power Into 50 * 25dB Gain Control Range * Excellent Phase & Amplitude Balance * Digitally Controlled Stand-By Mode * 800MHz to 1000MHz Operation
GC PHASE VDD1
FO R
1 2 3 4 5 6 7 8 POWER CONTROL
-45 +45
16 STAND BY 15 VDD2 14 VDD3 13 GND3 12 RF OUT 11 GND4 10 Q REF 9 Q SIG
N O T
GND2 LO IN GND1
I REF I SIG
Ordering Information
RF2423 RF2423 PCBA 100mW Spread-Spectrum Transmitter IC Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A3 001218
5-35
RF2423
Absolute Maximum Ratings Parameter
Supply Voltage Power Down Voltage (VPD) Input LO and RF Levels Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +7.5 VDD +0.4 +6 -40 to +85 -40 to +150
Unit
VDC VDC dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Carrier Input (LO IN)
Frequency Range Power Level Input Impedance
Specification Min. Typ. Max.
800 to 1000 0 to +6 55-j120 DC to 100 2.0 to 3.0 VREF 2 VREF 2.5 3 3000 40
Unit
MHz dBm
Condition
T=25 C, VDD =5.3V, VGC =5.3V
5
MODULATORS AND UPCONVERTERS
Modulation Input
Frequency Range Reference Voltage (VREF) Modulation for 100mW Output Power (I & Q) Maximum Modulation (I & Q) Quadrature Phase Error Input Impedance DC Offset (I & Q)
Output Power Output Impedance Output VSWR Second Harmonic Output Other Harmonics Output Sideband Suppression Carrier Suppression
+22 -15
N E W
25 22 +22 -10 50 2:1 -45 <-20 35 30 25 1 to 4 <1.5 <100 >50 VCC 0 5 4.5 to 6.0 110 50 2 60
RF Output
FO R
Output Level Control
N O T
Control Range Control Voltage Control Input Current
Standby Mode
Turn On/Off Time STANDBY Input Impedance Power Down "ON" Power Down "OFF"
Power Supply
Voltage Current
5-36
D E S IG N S
915MHz MHz V V V mV 200 +5 dBm dBm dBc dBc dB dB VGAIN =0V dB V mA ns k V V V V mA mA mA 170 20
VDD =5.3V, VGC =5.3V, LO power=0dBm, LO frequency=915MHz, SSB, I/Q=2.0VP sine wave, VREF =3V
Modulation DC offset can be externally adjusted for optimum suppression. Carrier suppression is then typically better than 40dB.
Threshold voltage; Part is turned "ON" Threshold voltage; Part is turned "OFF" Specifications Operating limits Total, 100mW output power Total, minimum output power Standby mode
Rev A3 001218
RF2423
Pin 1 Function GC Description
Gain control of the RF amplifier. This pin can be used to control the output power over a 25dB range. Output power is the lowest when the control voltage is 1V or lower, and the highest when set to 4V or higher. When a fixed maximum output level is needed, it is recommended to connect this pin to VDD.
Interface Schematic
5 k GC
10 k
2
PHASE
3
VDD1
4 5
GND2 LO IN
6 7
GND1 I REF
FO R
Ground connection for the baseband, LO and mixer circuits. Keep traces physically short and connect immediately to ground plane for best performance. Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned 0.15V (relative to the I SIG DC voltage). Without tuning, it will typically be better than 25dB. Input impedance of this pin is about 3k.
N E W
This pin adjusts the phase of the I/Q signals. However, the control is very sensitive and hard to control. Control voltage change for a few degrees adjustment is in the order of 10mV. Device to device and temperature variation are not characterized. Therefore it is not recommended to use this pin; leave it not connected. Do NOT connect it to ground. For compensating large errors in the I/Q signals supplied to the device or in control loops, this pin may prove useful. Power supply to all circuits except the RF output stages. It is recommended to put some RF decoupling on this pin, though it is not critical. An optional 0.1F capacitor is required if no other low frequency bypass capacitor is nearby. Ground connection for the gain controlled RF amplifier. Keep traces physically short and connect immediately to ground plane for best performance. Modulator LO input. A series 22nH inductor can be used for matching. This pin is NOT internally DC blocked. An external blocking capacitor must be provided if the pin is connected to a device with DC present. A DC path to ground (i.e. an inductor or resistor to ground) is, however, acceptable at this pin. If a blocking capacitor is required, a value of 33pF is recommended.
PHASE
D E S IG N S
5
MODULATORS AND UPCONVERTERS
4 k I SIG 2 k 1 k Q SIG 2 k 1 k
LO IN
I REF
2 k
1 k
8
I SIG
N O T
9
Q SIG
Baseband input to the I mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be VDD2/2. Input impedance of this pin is about 3k. Baseband input to the Q mixer. This pin is DC coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 5V. The DC level supplied to this pin should be VDD2/2. Input impedance of this pin is about 3k.
Q REF
2 k
1 k
10
Q REF
Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. To obtain a carrier suppression of better than 25dB it may be tuned 0.15V (relative to the Q SIG DC voltage). Without tuning it will typically be better than 25dB. Input impedance of this pin is about 3k.
Rev A3 001218
5-37
RF2423
Pin 11 Function GND4 Description
Ground connection for the RF driver and output stage. Keep traces physically short and connect immediately to ground plane for best performance. Having a good ground connection on this pin is extremely important due to the high RF levels in the circuits connected to this pin. 50 RF output. This pin is not internally DC blocked and an external blocking capacitor of 22pF is needed.
Interface Schematic
12
RF OUT
VDD
RF OUT
13
GND3
5
MODULATORS AND UPCONVERTERS
14
VDD3
15
VDD2
16
STANDBY
N O T
5-38
FO R
N E W
Ground connection for the RF driver and output stage. Keep traces physically short and connect immediately to ground plane for best performance. Having a good ground connection on this pin is extremely important due to the high RF levels in the circuits connected to this pin. Power supply for the RF output stage. A 33pF external bypass capacitor is required and an optional 0.1F will be required if no other low frequency bypass capacitors are nearby. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Having good bypassing on this pin is especially important because of the high levels of RF signal on the circuits connected to this pin. Power supply for the RF driver stage. A 33pF external bypass capacitor is required and an optional 0.1F will be required if no other low frequency bypass capacitors are near by. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Having good bypassing on this pin is especially important because of the high levels of RF signal on the circuits connected to this pin. Standby mode control. When this pin is 0V all circuits are turned off, and when this pin is VDD all circuits are operating. This is a high impedance input, internally connected to the gate of a few transistors. To minimize current consumption in power down mode, this pin should be as close to 0 V as possible, or even a little negative. Turn-on voltage of some parts of the circuit may be as low as 0.0 V. In order to maximize output power this pin should be as close to VDD as possible during normal operation.
D E S IG N S
Rev A3 001218
RF2423
Application Schematic
CMOS GAIN CONTROL VDD 100 nF 4 22 nH LO INPUT VREF R R C I INPUT C NOTE 1: 8 7 5 6
-45
1 2 3 POWER CONTROL
16 15 Note 1 14 13 12 11 10 9 Note 1 100 nF
STANDBY VDD 100 nF
D E S IG N S
22 pF
+45
RF OUTPUT VREF
R
5
Q INPUT
C
C
33 pF SMD capacitor mounted as close to the package pin as possible, grounded through via to the ground plane with minimum inductance. The values of R and C depend on the lowest frequency of the baseband signal.
NOTE 2:
N O T
Rev A3 001218
FO R
N E W
5-39
MODULATORS AND UPCONVERTERS
R
RF2423
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 P1-2 P1-3 P1-4 1 2 3 4 5 P2-1 C4 100 nF QSIG QREF IREF ISIG GND P2-4 P2-5 P2-1 P2-2 P2 1 2 3 4 5 LEVEL PHASE GND VDD STBY
2423400 Rev -
5
MODULATORS AND UPCONVERTERS
P2-2 P2-4
D E S IG N S
16 15 14 13 12 11 10 9 R4 22 C3 36 pF C2 36 pF C6 100 nF C1 36 pF R3 0
C5 100 nF
1 2 3 4
P2-5
POWER CONTROL
P2-4
C7 100 pF
LO IN J1
L1 22 nH R2 33
5 6 7 8
-45 +45
RF OUT J2
P1-3 P1-4 R1 22
N E W
P1-2 P1-1
N O T
5-40
FO R
Rev A3 001218
RF2423
Evaluation Board Layout 1.25" x 1.25"
Board Thickness 0.031"; Board Material FR-4
D E S IG N S
5
MODULATORS AND UPCONVERTERS
N O T
Rev A3 001218
FO R
N E W
5-41
5
MODULATORS AND UPCONVERTERS
5-42
RF2423
N O T FO R N E W D E S IG N S
Rev A3 001218

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