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Preliminary 4
Typical Applications * CDMA PCS LNA * TDMA PCS LNA * W-CDMA/CDMA2000 LNA
RF2364
3V PCS LOW NOISE AMPLIFIER
* General Purpose Amplification * Commercial and Consumer Systems
Product Description
The RF2364 is a low noise amplifier with a high dynamic range designed for CDMA and TDMA PCS, as well as W-CDMA/CDMA2000 applications. The device functions as an outstanding front end low noise amplifier and the bias current can be set externally. The IC includes a power down feature used to completely turn-off the device and is featured in a standard SOT 5-lead plastic package.
1.60 + 0.01 0.400
1
4
GENERAL PURPOSE AMPLIFIERS
0.15 0.05
2.90 + 0.10
0.950
2.80 + 0.20 3 MAX 0 MIN 0.45 + 0.10 0.127
1.44 1.04
Dimensions in mm.
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOT 5-Lead
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features * Low Noise and High Intercept Point * 18dB Gain * Power Down Control * Single 3.0V Power Supply * PCS and W-CDMA Band Operation * 1.8GHz to 2.5GHz Operation
RF IN
1
5
RF OUT
GND1
2
VPD
3
4
GND2
Ordering Information
RF2364 RF2364 PCBA 3V PCS Low Noise Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A4 010501
4-209
RF2364
Absolute Maximum Ratings Parameter
Supply Voltage Input RF Level Storage Temperature
Preliminary
Rating
-0.5 to +8.0 +10 -40 to +150
Unit
VDC dBm C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Operating Range
Overall Frequency Range Supply Voltage (VCC) Power Down Voltage (VPD) Current Consumption Power Down Current Operating Ambient Temperature Input Impedance Output Impedance
Specification Min. Typ. Max.
1930 2.7 2.7 1990 3.3 2.9 0.9 23.5 10 +85
Unit
MHz V V V mA A
o
Condition
4
GENERAL PURPOSE AMPLIFIERS
3.0
17.0 -40 50 50
For normal operation For power down operation VCC =3.0V, Values reflect ICC +IPD VCC =3.0V, VPD <0.9V
C T=25oC
Low Noise Amplifier Performance
Power Gain Noise Figure Input IP3 Input VSWR Output VSWR Input P1dB 18 1.8 +5 21 dB dB dBm
VCC =3.0V, ICC =17mA VCC =3.0V With external matching components.
2:1 2:1 -8.5 dBm
4-210
Rev A4 010501
Preliminary
Pin 1 Function RF IN Description
RF input pin. This pin is DC coupled and matched to 50.
RF2364
Interface Schematic
To Bias Circuit RF OUT RF IN
2 3
GND1 VPD
4 5
GND2 RF OUT
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Amplifier Output pin. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics.
Rev A4 010501
4-211
GENERAL PURPOSE AMPLIFIERS
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. For low noise amplifier applications, this pin is used to control the bias current. See plots for bias current settings. An external resistor (R1) can be used to set the bias current for any VPD voltage (See Application Note). For driver amplifier applications, this is the Power Down pin for the IC. VPD =2.8V + 0.1V is required for proper operation. VPD< 0.9V turns off the Part. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Nominal current required for VPD =2.8V is 2.0mA typical and 3.0mA Max (@ VPD =2.9V).
PD
4
RF2364
Application Notes
Preliminary
Power Down Pin Resistor The Power Down pin (pin 3) of the RF2364 3V Low Noise Amplifier should be maintained at 2.7V to 2.9V for proper operation. This voltage range ensures the correct bias current will be present at the Power Down pin of the device. However, an external series resistor may be used to allow various operating voltages at this pin (see R1 in Application Schematics). The required value for this resistor may be roughly calculated by using the operating input voltage to the Power Down pin, the desired voltage at the device, and the typical current consumption for the Power Down pin, along with Ohms law. For example, assume the design will supply 3.3V to the Power Down pin of the device, but the biasing circuitry internal to the RF2364 requires 2.8V, and the power down bias current is known to typically be 5.5mA, then the required value from R1 would be found from:
4
GENERAL PURPOSE AMPLIFIERS
3.3V - 2.8V ---------------------------- = 90.9 5.5mA
4-212
Rev A4 010501
Preliminary
Application Schematic PCS Band
VCC 10 nF
RF2364
15 nF RF IN 1 5
4.7 nH RF OUT 1.5 pF 2 1.5 pF
R1 VPD Optional See Application Notes
8.2 nH 3 10 nF 4 3.3 nH
4
GENERAL PURPOSE AMPLIFIERS
10 nF RF OUT 1 pF
Application Schematic W-CDMA Band
VCC
47 pF RF IN 1 5
4.7 nH
2 8.2 nH 3 Optional See Application Notes 10 nF 4
R1 VPD
Rev A4 010501
4-213
RF2364
(Download Bill of Materials from www.rfmd.com.)
P1 1 P1-2 2 GND VCC P2-2 P2 1 2 GND VPD VCC C2 10 nF C1 15 nF 1 5 C3 1.5 pF 2 L1 8.2 nH VPD C5 10 nF
2364400-
Preliminary
Evaluation Board Schematic - PCS Band
4
GENERAL PURPOSE AMPLIFIERS
J1 RF IN
50 strip
L2 4.7 nH C4 1.5 pF
50 strip
J2 RF OUT
3
4 L3 3.3 nH
4-214
Rev A4 010501
Preliminary
Evaluation Board Layout Board Size 1" x 1"
Board Thickness 0.031"; Board Material FR-4
RF2364
4
GENERAL PURPOSE AMPLIFIERS
Rev A4 010501
4-215
RF2364
Gain versus VCC VPD=2.8V, Frequency=1960MHz
19.00 6.50 18.50 6.00 18.00 5.50 17.50
Preliminary
IIP3 versus VCC VPD=2.8V, Frequency=1960MHz
Gain (dB)
IIP3 (dBm)
5.00
17.00
16.50
4.50
4
GENERAL PURPOSE AMPLIFIERS
16.00 Gain, -30 15.50 Gain, 25 Gain, 85 15.00 2.7 2.8 2.9 3 3.1 3.2 3.3
4.00 IIP3, -30 3.50 IIP3, 25 IIP3, 85 3.00 2.7 2.8 2.9 3 3.1 3.2 3.3
VCC (V)
VCC (V)
Noise Figure versus VCC VPD=2.8V, Frequency=1960MHz
2.3 2.1 1.9 -7.90 -8.00 -8.10 -8.20
Input P1dB versus VCC VPD=2.8V, Frequency=1960MHz
Input P1dB (dBm)
1.7
-8.30 -8.40 -8.50 -8.60 P1dB, -30 P1dB, 25 P1dB, 85
NF (dB)
1.5 1.3 1.1 0.9 0.7 0.5 2.7 2.8 2.9 3 3.1 3.2 3.3 NF, -30 NF, 25 NF, 85
-8.70 -8.80 -8.90 2.7 2.8 2.9 3 3.1 3.2 3.3
VCC (V)
VCC (V)
ICC versus VCC VPD=2.8V, Frequency=1960MHz
9.20 19.00
Gain versus VPD VCC=3.0V, Frequency=1960MHz
9.00
18.50
8.80
18.00
8.60
Gain (dB)
ICC (mA)
Icc, -30 8.40 Icc, 85 8.20
Icc, 25
17.50 Gain, -30 17.00 Gain, 25 Gain, 85 16.50
8.00 16.00
7.80
7.60 2.7 2.8 2.9 3 3.1 3.2 3.3
15.50 2.7 2.75 2.8 2.85 2.9
VCC (V)
VPD (V)
4-216
Rev A4 010501
Preliminary
IIP3 versus VPD VCC=3.0V, Frequency=1960MHz
6.00 5.80 5.60 5.40 1.80 2.00 2.20
RF2364
Noise Figure versus VPD VCC=3.0V, Frequency=1960MHz
NF, -30 NF, 25 NF, 85
IIP3 (dBm)
5.20 5.00 4.80 4.60 4.40 4.20 4.00 2.7 2.75 2.8 2.85 2.9 IIP3, -30 IIP3, 25 IIP3, 85 1.00 2.7 2.75 2.8 2.85 1.20 1.40
NF (dB)
1.60
4
2.9
VPD (V)
VPD (V)
P1dB versus VPD VCC=3.0V, Frequency=1960MHz
-7.40 -7.60 -7.80 -8.00 6.00 5.80 5.60 5.40 5.20
IPD versus VPD VCC=3.0V, Frequency=1960MHz
Input P1dB (dBm)
-8.20 -8.40 -8.60 -8.80 -9.00 -9.20 -9.40 2.7 2.75 2.8 2.85 2.9 P1dB, -30 P1dB, 25 P1dB, 85
IPD (mA)
5.00 4.80 4.60 Ipd, -30 4.40 4.20 4.00 2.7 2.75 2.8 2.85 2.9 Ipd, 25 Ipd, 85
VPD (V)
VPD (V)
Gain versus Frequency VCC=3.0V, VPD=2.8V
19.00 1.85
Input Impedance versus Frequency VCC=3.0V, VPD=2.8V
18.50
1.8
18.00
1.75
17.50 Gain, -30 17.00 Gain, 25 Gain, 85 16.50
Input VSWR
Gain (dB)
1.7 S11, -30 1.65 S11, 25 S11, 85 1.6
16.00 1930
1940
1950
1960
1970
1980
1990
1.55 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Frequency (MHz)
Rev A4 010501
4-217
GENERAL PURPOSE AMPLIFIERS
RF2364
Output Impedance versus Frequency VCC=3.0V, VPD=2.8V
1.55
Preliminary
1.5 S22, -30
Output VSWR
1.45
S22, 25 S22, 85
1.4
4
GENERAL PURPOSE AMPLIFIERS
1.35
1.3 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
4-218
Rev A4 010501

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