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RF101L4S Diodes Fast recovery diode RF101L4S Applications General rectification Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Ultra high switching speed 4) Low switching loss Constructure Silicon epitaxial planar Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.60.2 0.10.02 0.1 1.50.2 2.00.2 5.00.3 6 6 4.50.2 1.20.3 PMDS ROHM : PMDS JEDEC : SOD-106 Manufacture date Structure Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.550.05 1.750.1 0.3 5.50.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 400 400 1 20 150 -55 to +150 5.30.1 0.05 9.50.1 120.2 Unit V V A A (*1)Mounting on epoxy board. 180Half sine wave Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. - Max. 1.25 10 25 Unit V A ns Conditions IF=1.0A VR=400V IF=0.5A,IR=1A,Irr=0.25*IR trr 4.2 1/3 RF101L4S Diodes Electrical characteristic curves 1 10000 Ta=150 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=125 0.1 Ta=150 Ta=75 Ta=25 Ta=-25 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=125 Ta=75 Ta=25 10 Ta=-25 100 f=1MHz 100 10 1 0.001 0 200 400 600 800 1000 1200 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0.1 0 50 100 150 200 250 300 350 400 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 1300 500 100 Ta=25 VR=400V n=30pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 70 60 50 40 30 20 10 0 AVE:41.8pF Ta=25 f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 1200 Ta=25 IF=1A n=30pcs 450 400 350 300 250 200 150 100 50 1100 1000 AVE:24.8nA 900 AVE:1007mV 800 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) 25 20 15 10 5 0 Ifsm 8.3ms 8.3ms 1cyc 100 100 AVE:48.0A 50 AVE:18.4ns 10 0 1 trr DISPERSION MAP Mounted on epoxy board 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 1000 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Ifsm t IM=10mA IF=100mA 3 DC 2.5 FORWARD POWER DISSIPATION:Pf(W) 2 1.5 1 0.5 Sin(180) PEAK SURGE FORWARD CURRENT:IFSM(A) 1m tim Rth(j-a) D=1/2 100 300u 100 10 Rth(j-c) 1 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.1 10 1000 0 0.5 1 1.5 2 TIME:t(s) Rth-t CHARACTERISTICS 2/3 RF101L4S Diodes 2 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t D=1/2 1 DC T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=200V Tj=150 3 30 t T ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0V Io VR D=t/T VR=200V Tj=150 25 20 15 10 5 AVE4.60kV AVE16.3kV 2 1 Sin(180) 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 0 C=200pF R=0 C=100pF R=1.5k AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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