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RB225T-60
Diodes
Schottky barrier diode
RB225T-60
Applications Switching power supply External dimensions (Unit : mm)
4.50.3 0.1
Structure
1.2
1.3 0.8 (1) (2) (3)
13.5MIN
Construction Silicon epitaxial planar
5.00.2
8.00.2 12.00.2
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
10.00.3 0.1
2.80.2 0.1
15.00.4 0.2 8.0 0.70.1 0.05
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2
Electrical characteristic (Ta=25C) Parameter Symbol
Symbol VRM VR Io IFSM Tj Tstg
Limits 60 60 30 100 150 -40 to +150
Unit V V A A
Forward characteristics Reverse characteristics Thermal impedance
VF IR jc
Min. -
Typ. -
Max. 0.63 600 1.75
Unit V A /W
Conditions IF=15A VR=60V junction to case
Rev.A
1/3
RB225T-60
Diodes
Electrical characteristic curves
100 1000000 Ta=150 10 Ta=125 1 Ta=-25 Ta=25 0.1 Ta=75 100000 Ta=150 Ta=125 10000 f=1MHz
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10000 1000
1000
Ta=75 Ta=25
100
100 10 1 0.1 Ta=-25
10
0.01 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 700
1 0 10 20 30 40 50 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 60 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
600
500 Ta=25 IF=15A n=30pcs 450 Ta=25 VR=60V n=30pcs
2200 2150 2100 2050 2000 1950 AVE:2030.9pF 1900 Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
350 300 250 200 150 100 50 0 AVE:70.1nA
580
570
560 AVE:580.0mV 550 VF DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
590
400
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
1000
RESERVE RECOVERY TIME:trr(ns)
Ifsm
1cyc 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 AVE:176.0A 100 50 0
25 20 15 10 AVE:23.3pF 5 0
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 100 8.3ms 8.3ms 1cyc
10
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 trr DISPERSION MAP
IFSM DISRESION MAP
1000
100
IM=100mA IF=10A
50
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
40
1ms time
DC D=1/2
10
300us
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-a)
30 Sin(180) 20
100
1
Rth(j-c)
10
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.1 10 1000 0 10 20 30 40 50 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
Rev.A
2/3
RB225T-60
Diodes
30 80 70 80 0A 0V Io 70 0A 0V DC T D=1/2 Sin(180) Io t VR D=t/T VR=30V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
REVERSE POWER DISSIPATION:PR (W)
60 50 40 30 20 10 Sin(180) 0 D=1/2 DC
20 Sin(180) 15 D=1/2 10 5 0 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC
t T
VR D=t/T VR=30V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
25
60 50 40 30 20 10 0 0
0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150
25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
125
150
30 No break at 30kV 25
ELECTROSTATIC DISCHARGE TEST ESD(KV)
20 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k AVE:18.5kV
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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