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| PHOTOMULTIPLIER TUBES R5983, R5983P New Electro-Optical Design Wide Effective Area, Low Noise Bialkali Photocathode 185 nm to 710 nm, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type GNew Electro-Optical Design Structure GLow Noise GWide Effective Area ................................... 10 mm x 24 mm GHigh Cathode Sensitivity (Luminous) ..... 100 A/lm GHigh Anode Sensitivity (Luminous) ......... 1000 A/lm GR4220 Wide Effective Area Type FEATURES APPLICATIONS GSpectroscopy GBiomedical GEnvironmental Monitoring SPECIFICATIONS GENERAL Parameter Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base SuitabIe Socket SuitabIe D Type Socket Assembly Weight Operating Ambient Temperature Storage Temperature Figure 1: Typical Anode Uniformity Description/Value Unit 185 to 710 410 Low Noise Bialkali 10 x 24 UV glass Circular Cage 9 Approx. 4 Approx. 6 11-pin base E678-11A (Sold Separately) E717-63 (Sold Separately) Approx. 45 -30 to +50 -30 to +50 nm nm -- mm -- -- -- pF pF -- -- -- g C C 2.5 0.5 10 MIN. 2.5 0.5 SUPPLY VOLTAGE : 1000 V SPOT SIZE : 0.5 mm WAVELENGTH : 420 mm CENTER OF PHOTOCATHODE 100 RELATIVE SENSITIVITY (%) 80 60 8 mm 40 * The center of the R5983 photocathode is slightly laid out to the left side from guide key, light path should be adjusted by 2.5 mm to the left side from the guide key. MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit V V mA Supply Voltage Between Anode and Cathode 1250 Between Anode and Last Dynode 250 Average Anode Current A 0.1 NOTE A: Averaged over any interval of 30 seconds maximum. 20 0 8 7 6 5 4 3 2 1 0 1 2 3 4 DISTANCE FROM GUIDE KEY (mm) TPMSB0122EB Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBE R5983, R5983P CHARACTERISTlCS (at 25 C) Parameter Cathode Sensitivity Quantum Efficiency at 320 nm (Peak) Luminous A Radiant at 410 nm (Peak) Blue Sensitivity Index (CS 5-58) B Anode Sensitivity Luminous C Radiant at 410 nm Gain C Anode Dark Current After 30 minute Storage in the Darkness Anode Dark Counts E ENI (Equivalent Noise Input) F Time Response Anode Pulse Rise Time G Electron Transit Time H Anode Current Stability Current Hysteresis Voltage Hysteresis J D R5983 for General Purpose Min. Typ. 23 100 70 8.0 1000 7.0 x 105 1 x 107 0.2 3.6 x 10-17 2.2 22 0.1 1.0 2.0 R5983P for Photon Counting Min. Typ. 23 100 70 8.0 1000 7.0 x 105 1 x 107 nA s-1 W ns ns % % Max. Max. Unit % A/lm mA/W 60 60 500 500 A/lm A/W 10 3.6 x 10-17 2.2 22 0.1 1.0 50 NOTES A: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. B: The value is cathode output current when a blue filter(Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note A. C: Measured with the same light source as Note A and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. D: Measured with the same supply voltage and voltage distribution ratio as Note C after removal of light. E: Measured at the voltage producing the gain of 1 x 106. F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. 2q.ldb.G. f S where q = Electronic charge (1.60 x 10-19 coulomb). ldb = Anode dark current (after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. ENI = G:The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the whole photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. - lmin. x 100 (%) li ANODE CURRENT li l max. l min. TIME 0 5 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1: Voltage Distribution Ratio Electrode Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P SuppIy Voltage : 1000 V dc K : Cathode, Dy : Dynode, P : Anode Figure 2: Typical Spectral Response TPMSB0010EA Figure 3: Typical Gain and Anode Dark Current 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 300 E OD AN RK DA T EN RR CU TPMSB0170EA 100 108 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 10 CATHODE RADIANT SENSITIVITY 1 QUANTUM EFFICIENCY ANODE DARK CURRENT (A) 107 106 105 104 103 102 101 1500 IN GA 0.1 0.01 100 400 500 600 800 1000 200 300 400 500 600 700 800 WAVELENGTH (nm) SUPPLY VOLTAGE (V) Figure 4: Typical ENI vs. Wavelength 10-12 TPMSB0027EA Figure 5: Typical Single Photon Pulse Height Distribution for R5983P TPMSB0171EA 1 10-13 COUNTS PER CHANNEL FULL SCALE 104 (PHOTON + DARK) FULL SCALE 104 (DARK) EQUIVALENT NOISE INPUT (W) 0.8 WAVELENGTH OF INCIDENT LIGHT: 450 (nm) SUPPLY VOLTAGE: 852 (V) LOWER LEVEL DISCRI.: 65 (ch) PHOTON + DARK COUNT: 6046 (s-1) DARK COUNT: 10 (s-1) TEMPERATURE: 25 (C) 10-14 0.6 10-15 0.4 SIGNAL + DARK 0.2 DARK 0 200 400 600 800 1000 10-16 10-17 100 200 300 400 500 600 700 800 WAVELENGTH (nm) CHANNEL NUMBER (CH) Figure 6: Typical Temperature Characteristics of Dark Count for R5983P 104 TPMSB0030EB 103 DARK COUNT (s-1) 102 101 100 10-1 -20 0 +20 +40 +50 TEMPERATURE (C) GAIN PHOTOMULTIPLIER TUBE R5983, R5983P Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) 28.5 1.5 10 MIN. 2.5 0.5 33 Figure 8: Socket E678-11A (Sold Separately) 49 38 PHOTOCATHODE DY6 6 3.5 5 24 MIN. DY5 5 7 DY7 8 DY8 9 DY9 10 P 29 80 MAX. DY4 4 94 MAX. 49.0 2.5 1 11 K DY1 DIRECTION OF LIGHT 18 DY2 2 4 DY3 3 TACCA0064EA 32.2 0.5 11 PIN BASE JEDEC No. B11-88 TPMSA0035EB Figure 9: D Type Socket Assembly E717-63 (Sold Separately) 5 33.0 0.3 3.5 PMT P R10 DY9 9 R9 DY8 DY7 8 R8 7 R7 DY6 DY5 6 R6 5 R5 4 R4 HOUSING (INSULATOR) DY3 DY2 3 R3 2 R2 DY1 K 1 R1 11 -HV AWG22 (VIOLET) TACCA0002EH SOCKET PIN No. 10 C3 C2 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) 38.0 0.3 49.0 0.3 29 4 R1 to R10 : 330 k C1 to C3 : 10 nF 30.0 +0 -1 31.0 0.5 DY4 450 10 POTTING COMPOUND Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard. WEB SITE http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se TPMS1057E02 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it JUL. 2002 IP |
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