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QS5U23 Transistor
Small switching (-20V, -1.5A)
QS5U23
Features 1) The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The independently connected Schottky barrier diode have a low forward voltage. Applications Load switch , DC/DC conversion
(5) (4)
External dimensions (Units : mm)
2.9+0.1 - 1.9 +0.2 -
0.95 0.95
(5) (4)
0.7+0.1 -
2.8 +0.2 - 1.6 +0.2 -0.1
00.1
(1) (2) (3)
+0.1 +0.1 0.16 -0.06 0.4-0.05 Each lead has same dimensions
Abbreviated symbol : U23
Structure * Silicon P-channel MOSFET * Schottky Barrier DIODE Packaging specifications
Package Type Code Basic ordering unit (pieces) QS5U23 Taping TR 3000
(1)
2
(1)ANODE (2)SOURCE (3)GATE (4)DRAIN (5)CATHODE
1
(2)
(3)
1 ESD PROTECTION DIODE 2 BODY DIODE
Equivalent circuit Absolute maximum ratings (Ta=25C)
< MOSFET >
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP Limits -20 12 1.5 6.0 -0.75 -3.0 150 V V A A A A C
Pw <10s, Duty cycle < 1% = = Pw <10s, Duty cycle < 1% = =
Unit
IS
ISP Tch
< Di > Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature < MOSFET AND Di > Total power dissipation Range of strage temperature
VRM VR IF IFSM Tj
30 20 0.5 2.0 125
V V A A
C
60Hz / 1CYC
PD Tstg
1.0 -40125
W / TOTAL MOUNTED ON A CERAMIC BOARD
C
0.30.6
1.0MAX 0.85+0.1 -
1/4
QS5U23 Transistor
Electrical characteristics (Ta=25C) < MOSFET > Parameter Symbol
Min. - -20 - -0.7 - - - 1.0 - - - - - - - - - -
Typ. - - - - 160 180 260 - 325 60 40 10 10 35 10 4.2 1.0 1.1
Max. 10 - -1 -2.0 200 240 340 - - - - - - - - - - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=12V/ VDS=0V ID=-1mA/ VGS=0V VDS=-20V/ VGS=0V VDS=-10V/ ID=-1mA ID=-1.5A, VGS=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15 VGS=-4.5V RL=20 RGS=10 VDD
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current
Gate threshold voltage IDSS VGS(th) RDS(on) Pulsed Yfs Pulsed Ciss Coss Crss td(on) Pulsed tr Pulsed td(off) Pulsed tf Pulsed Qg Qgs Qgd
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise Time Turn off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
-15V
VGS=-4.5V
ID=-1.5A
< MOSFET >Body diode(source-drain) Forward voltage < Di > Foward voltage drop Reverse leakage - VF IR - - - - - VSD - - -1.2 V IS=-0.75A/ VGS=0V
0.36 0.47 100
V V A
IF=0.1A IF=0.5A VR=20V
2/4
QS5U23 Transistor
Electrical characteristic curves
10
Static Drain-Source On-State Resistance RDS(on)[m]
Drain Current : -ID (A)
1 Ta=125C 75C 25C -25C 0.1
100
Ta=125 C 75 C 25 C -25 C
Static Drain-Source On-State Resistance RDS(on)[m]
VDS=-10V pulsed
1000
VGS=-4.5V pulsed
1000
VGS=-4V pulsed
100
Ta=125 C 75 C 25 C -25 C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10 0.1
1
10
10 0.1
1
10
Gate-Source Voltage : VGS[V]
Drain Current : -ID[A]
Drain Current : -ID[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
1000
Static Drain-Source On-State Resistance RDS(on)[m]
400
1000
Static Drain-Source On-State Resistance RDS(on)[m]
350 300 250 200 150 100 50 0 0 2 4 6 8
ID=-0.75A -1.5A
100
Ta=125 C 75 C 25 C -25 C
Static Drain-Source On-State Resistance RDS(on)[m]
VGS=-2.5V pulsed
Ta=25 C pulsed
Ta=25 C pulsed
100
VGS=-2.5V -4.0V -4.5V
10 0.1
1
10
Drain Current : -ID[A]
10
12
10 0.1
1
10
Gate-Source Voltage : -VGS[V]
Drain Current : -ID[A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain-Current
Fig.5 Static Drain-Source On-State Resistance vs.Gate-Source Voltage
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
10
VGS=0V pulsed
10000
Ta=25 C f=1MHz VGS=0V
1000
Ta=25 C VDD=-15V VGS=-4.5V RG=10 pulsed
Reverse Drain Current : -IDR[A]
Capacitance : C [pF]
1
Ta=125 C 75 C 25 C -25 C
1000
Switching Time : t [ns]
100
td(off) tf
Ciss 100 Coss Crss
0.1
10
td(on) tr
0.01 0
0.5
1.0
1.5
2.0
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
Source-Drain Voltage : -VSD[V]
Drain-Source Voltage : -VDS[V]
Drain Current : -ID[A]
Fig.7 Reverse Drain Current VS. Source-Drain Current
Fig.8 Typical Capactitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
QS5U23 Transistor
8 7 Ta=25 C VDD=-15V ID=-1.5A RG=10 pulsed
1000
Ta=125 C 75 C 25 C -25 C
100
125 C
Gate-Source Voltage: -VGS [V]
6 5 4 3 2 1 0
Forward Current : IF [mA]
100
Reverse Current : IR[A]
10 1
75 C
10
0.1
25 C
0.01
-25 C
1 0.001 0.1 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 Forward Voltage :VF [V] Reverse Voltage : VR[V]
0
1
2
3
4
5
6
Total Gate Charge : Qg[nC]
Fig.10 Dynamic Input Characteristics Fig.11 Forward Temperature Characteristics Fig.12 Reverse Temperature Characteristics
Measurement circuits
VGS 10% 50% Pulse Width 50% 90%
10%
10%
VGS
ID D.U.T. RL
VDS
VDS
90%
90%
RG
VDD
td(on) ton
tr
td(off)
tf toff
Fig.13 Switching Time Measurement Circuit
Fig.14 Switching Waveforms
VG Qg VGS
VGS
IG(Const)
ID
VDS
Qgs
RG D.U.T. RL
Qgd
VDD
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveforms
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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